JP6322197B2 - ナノワイヤサイズの光電構造及びその選択された部分を改質させる方法。 - Google Patents

ナノワイヤサイズの光電構造及びその選択された部分を改質させる方法。 Download PDF

Info

Publication number
JP6322197B2
JP6322197B2 JP2015539714A JP2015539714A JP6322197B2 JP 6322197 B2 JP6322197 B2 JP 6322197B2 JP 2015539714 A JP2015539714 A JP 2015539714A JP 2015539714 A JP2015539714 A JP 2015539714A JP 6322197 B2 JP6322197 B2 JP 6322197B2
Authority
JP
Japan
Prior art keywords
nanowire
layer
nanowires
conductive
tip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2015539714A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015536566A5 (https=
JP2015536566A (ja
Inventor
スコット ブラッド ハーナー，
スコット ブラッド ハーナー，
ダニエル ブライス トンプソン，
ダニエル ブライス トンプソン，
シンシア ルメイ，
シンシア ルメイ，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GLO AB
Original Assignee
GLO AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GLO AB filed Critical GLO AB
Publication of JP2015536566A publication Critical patent/JP2015536566A/ja
Publication of JP2015536566A5 publication Critical patent/JP2015536566A5/ja
Application granted granted Critical
Publication of JP6322197B2 publication Critical patent/JP6322197B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes

Landscapes

  • Led Devices (AREA)
JP2015539714A 2012-10-26 2013-10-22 ナノワイヤサイズの光電構造及びその選択された部分を改質させる方法。 Expired - Fee Related JP6322197B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261718884P 2012-10-26 2012-10-26
US61/718,884 2012-10-26
PCT/US2013/066151 WO2014066371A1 (en) 2012-10-26 2013-10-22 Nanowire sized opto-electronic structure and method for modifying selected portions of same

Publications (3)

Publication Number Publication Date
JP2015536566A JP2015536566A (ja) 2015-12-21
JP2015536566A5 JP2015536566A5 (https=) 2016-12-08
JP6322197B2 true JP6322197B2 (ja) 2018-05-09

Family

ID=50545182

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015539714A Expired - Fee Related JP6322197B2 (ja) 2012-10-26 2013-10-22 ナノワイヤサイズの光電構造及びその選択された部分を改質させる方法。

Country Status (5)

Country Link
US (2) US9178106B2 (https=)
EP (1) EP2912698B1 (https=)
JP (1) JP6322197B2 (https=)
TW (1) TW201427080A (https=)
WO (1) WO2014066371A1 (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012101718B4 (de) * 2012-03-01 2025-08-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
JP6322197B2 (ja) 2012-10-26 2018-05-09 グロ アーベーＧｌｏ Ａｂ ナノワイヤサイズの光電構造及びその選択された部分を改質させる方法。
US9166106B2 (en) 2012-10-26 2015-10-20 Glo Ab Nanowire sized opto-electronic structure and method for modifying selected portions of same
JP6353845B2 (ja) * 2012-10-26 2018-07-04 グロ アーベーＧｌｏ Ａｂ ナノワイヤｌｅｄ構造の製造方法
EP2973752A4 (en) 2013-03-15 2016-11-09 Glo Ab DIELECTRIC FILM WITH HIGH BREAKING INDEX TO INCREASE EXTRACTION EFFICIENCY OF NANODRAHT LEADS
FR3004006B1 (fr) * 2013-03-28 2016-10-07 Aledia Dispositif electroluminescent a nanofils actifs et nanofils de contact et procede de fabrication
CN204138341U (zh) * 2013-04-18 2015-02-04 崔波 硅衬底上的硅柱阵列
US9972750B2 (en) * 2013-12-13 2018-05-15 Glo Ab Use of dielectric film to reduce resistivity of transparent conductive oxide in nanowire LEDs
KR102188497B1 (ko) 2014-03-27 2020-12-09 삼성전자주식회사 나노구조 반도체 발광소자
DE102014107167B4 (de) 2014-05-21 2022-04-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Halbleiterbauelements mit einer Strukturschicht mit einer Mehrzahl von dreidimensionalen Strukturelementen und strahlungsemittierendes Halbleiterbauelement mit einer Strukturschicht mit einer Mehrzahl von dreidimensionalen Strukturelementen
DE102014117892A1 (de) * 2014-12-04 2016-06-09 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement sowie optoelektronisches Bauteil
EP3127747A1 (fr) * 2015-08-07 2017-02-08 Valeo Vision Dispositif d'éclairage et/ou de signalisation pour véhicule automobile
WO2017068450A1 (en) * 2015-10-20 2017-04-27 King Abdullah University Of Science And Technology Nanowires-based light emitters on thermally and electrically conductive substrates and of making same
DE102015120778B4 (de) * 2015-11-30 2021-09-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102016102876A1 (de) * 2016-02-18 2017-08-24 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
CN207396531U (zh) 2017-01-31 2018-05-22 杭州探真纳米科技有限公司 一种悬臂末端纳米探针
US10840223B2 (en) * 2017-03-23 2020-11-17 Intel Corporation Augmented reality display systems with super-lambertian LED source
JP7007547B2 (ja) * 2017-04-11 2022-01-24 日亜化学工業株式会社 発光素子の製造方法
US10418499B2 (en) 2017-06-01 2019-09-17 Glo Ab Self-aligned nanowire-based light emitting diode subpixels for a direct view display and method of making thereof
GB201718897D0 (en) 2017-11-15 2017-12-27 Microsoft Technology Licensing Llc Superconductor-semiconductor fabrication
US10707374B2 (en) 2017-09-15 2020-07-07 Glo Ab Etendue enhancement for light emitting diode subpixels
JP7137066B2 (ja) 2018-10-23 2022-09-14 日亜化学工業株式会社 発光素子の製造方法
US11024792B2 (en) 2019-01-25 2021-06-01 Microsoft Technology Licensing, Llc Fabrication methods
KR102859951B1 (ko) 2019-12-10 2025-09-15 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 표시 장치
US20230033526A1 (en) * 2019-12-24 2023-02-02 The Regents Of The University Of Michigan Group iii-nitride excitonic heterostructures
FR3118290A1 (fr) * 2020-12-17 2022-06-24 Aledia Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3988429B2 (ja) * 2001-10-10 2007-10-10 ソニー株式会社 半導体発光素子、画像表示装置及び照明装置とその製造方法
US7335908B2 (en) 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
US7132677B2 (en) 2004-02-13 2006-11-07 Dongguk University Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same
US7276389B2 (en) * 2004-02-25 2007-10-02 Samsung Electronics Co., Ltd. Article comprising metal oxide nanostructures and method for fabricating such nanostructures
US20070158661A1 (en) 2006-01-12 2007-07-12 Rutgers, The State University Of New Jersey ZnO nanostructure-based light emitting device
WO2007102781A1 (en) 2006-03-08 2007-09-13 Qunano Ab Method for metal-free synthesis of epitaxial semiconductor nanowires on si
KR101019941B1 (ko) 2006-03-10 2011-03-09 에스티씨. 유엔엠 Ｇａｎ 나노선의 펄스 성장 및 ⅲ 족 질화물 반도체 기판 물질과 디바이스에서의 어플리케이션
CN101595565B (zh) * 2006-09-18 2013-03-27 昆南诺股份有限公司 在垂直半导体结构上制造精密垂直和水平层的方法
WO2008140611A2 (en) 2006-12-18 2008-11-20 The Regents Of The University Of California Nanowire array-based light emitting diodes and lasers
JP5453105B2 (ja) * 2006-12-22 2014-03-26 クナノ アーベー ナノ構造のｌｅｄ及びデバイス
KR101524319B1 (ko) 2007-01-12 2015-06-10 큐나노 에이비 시준 리플렉터를 갖는 나노구조 ｌｅｄ 어레이
CN101681813B (zh) 2007-01-12 2012-07-11 昆南诺股份有限公司 氮化物纳米线及其制造方法
US7869032B2 (en) * 2007-04-05 2011-01-11 The Board Of Trustees Of The University Of Illinois Biosensors with porous dielectric surface for fluorescence enhancement and methods of manufacture
WO2008129861A1 (ja) * 2007-04-18 2008-10-30 Panasonic Corporation 発光素子
JP4954039B2 (ja) * 2007-11-29 2012-06-13 三菱電機株式会社 半導体装置の製造方法
JP2009147140A (ja) 2007-12-14 2009-07-02 Panasonic Corp 発光素子および発光素子の製造方法
EP2289106A4 (en) * 2008-06-13 2014-05-21 Qunano Ab CAPACITOR MOS NANOSTRUCTURE
KR20110039313A (ko) 2008-07-07 2011-04-15 글로 에이비 나노구조 ｌｅｄ
KR20100080094A (ko) 2008-12-31 2010-07-08 삼성전자주식회사 방사형 이종접합 구조의 나노 막대를 이용한 발광 다이오드
WO2010151604A2 (en) 2009-06-26 2010-12-29 California Institute Of Technology Methods for fabricating passivated silicon nanowires and devices thus obtained
US20110079766A1 (en) * 2009-10-01 2011-04-07 Isaac Harshman Wildeson Process for fabricating iii-nitride based nanopyramid leds directly on a metalized silicon substrate
KR101134493B1 (ko) 2010-03-19 2012-04-13 삼성엘이디 주식회사 발광 다이오드 및 이의 제조 방법
EP2583317A4 (en) * 2010-06-18 2016-06-15 Glo Ab NANODRAHT LED STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF
WO2011162715A1 (en) 2010-06-24 2011-12-29 Glo Ab Substrate with buffer layer for oriented nanowire growth
KR101710159B1 (ko) 2010-09-14 2017-03-08 삼성전자주식회사 Ⅲ족 질화물 나노로드 발광소자 및 그 제조 방법
WO2012050888A2 (en) 2010-09-28 2012-04-19 North Carolina State University Gallium nitride based structures with embedded voids and methods for their fabrication
KR20120040550A (ko) * 2010-10-19 2012-04-27 삼성엘이디 주식회사 반도체 발광소자 및 그 제조방법
KR20120055390A (ko) * 2010-11-23 2012-05-31 삼성엘이디 주식회사 발광소자 및 그 제조방법
KR20120070809A (ko) * 2010-12-22 2012-07-02 엘지이노텍 주식회사 발광 소자, 및 발광 소자 패키지
US8409892B2 (en) * 2011-04-14 2013-04-02 Opto Tech Corporation Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates
DE112012003376T5 (de) 2011-08-16 2014-06-12 Brightedge Technologies, Inc. Seitenberichterstattung
US8350249B1 (en) 2011-09-26 2013-01-08 Glo Ab Coalesced nanowire structures with interstitial voids and method for manufacturing the same
JP2015532014A (ja) * 2012-09-18 2015-11-05 グロ アーベーＧｌｏ Ａｂ ナノピラミッドサイズ光電構造及びそれを製造するための方法
JP6353845B2 (ja) 2012-10-26 2018-07-04 グロ アーベーＧｌｏ Ａｂ ナノワイヤｌｅｄ構造の製造方法
JP6322197B2 (ja) 2012-10-26 2018-05-09 グロ アーベーＧｌｏ Ａｂ ナノワイヤサイズの光電構造及びその選択された部分を改質させる方法。
US9166106B2 (en) 2012-10-26 2015-10-20 Glo Ab Nanowire sized opto-electronic structure and method for modifying selected portions of same

Also Published As

Publication number Publication date
EP2912698B1 (en) 2018-04-04
EP2912698A4 (en) 2016-04-06
US9178106B2 (en) 2015-11-03
US20160141450A1 (en) 2016-05-19
US9799796B2 (en) 2017-10-24
WO2014066371A1 (en) 2014-05-01
JP2015536566A (ja) 2015-12-21
EP2912698A1 (en) 2015-09-02
US20140117307A1 (en) 2014-05-01
TW201427080A (zh) 2014-07-01

Similar Documents

Publication Publication Date Title
JP6322197B2 (ja) ナノワイヤサイズの光電構造及びその選択された部分を改質させる方法。
JP6486519B2 (ja) ナノワイヤサイズの光電構造及びその選択された部分を改質する方法
JP6353845B2 (ja) ナノワイヤｌｅｄ構造の製造方法
US9741895B2 (en) Removal of 3D semiconductor structures by dry etching
TW201515269A (zh) 用於平整化及界定奈米線裝置之活化區的絕緣層
JP2016519421A (ja) ナノワイヤｌｅｄの抽出効率を向上させる高誘電体膜
US9196787B2 (en) Nanowire LED structure with decreased leakage and method of making same
US9059355B2 (en) Stopping an etch in a planar layer after etching a 3D structure
US20140284551A1 (en) Nanowire LED Structure with Decreased Leakage and Method of Making Same
TW201511334A (zh) 具有經減低漏電之奈米線發光二極體結構及其製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161021

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20161021

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170823

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170901

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20171130

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180309

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180406

R150 Certificate of patent or registration of utility model

Ref document number: 6322197

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees