JP6313975B2 - ワイヤーの気相合成 - Google Patents
ワイヤーの気相合成 Download PDFInfo
- Publication number
- JP6313975B2 JP6313975B2 JP2013510045A JP2013510045A JP6313975B2 JP 6313975 B2 JP6313975 B2 JP 6313975B2 JP 2013510045 A JP2013510045 A JP 2013510045A JP 2013510045 A JP2013510045 A JP 2013510045A JP 6313975 B2 JP6313975 B2 JP 6313975B2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- growth
- semiconductor nanowire
- semiconductor
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000015572 biosynthetic process Effects 0.000 title claims description 25
- 238000003786 synthesis reaction Methods 0.000 title claims description 15
- 239000012808 vapor phase Substances 0.000 title description 2
- 230000012010 growth Effects 0.000 claims description 124
- 239000002245 particle Substances 0.000 claims description 90
- 239000002243 precursor Substances 0.000 claims description 56
- 239000003054 catalyst Substances 0.000 claims description 49
- 239000002070 nanowire Substances 0.000 claims description 49
- 239000007789 gas Substances 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 43
- 239000004065 semiconductor Substances 0.000 claims description 39
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 34
- 238000006243 chemical reaction Methods 0.000 claims description 29
- 239000002019 doping agent Substances 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 23
- 239000000443 aerosol Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 20
- 238000010249 in-situ analysis Methods 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 12
- 239000000470 constituent Substances 0.000 claims description 10
- 239000012159 carrier gas Substances 0.000 claims description 9
- 238000009826 distribution Methods 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- 238000010924 continuous production Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 230000002452 interceptive effect Effects 0.000 claims 1
- 239000010931 gold Substances 0.000 description 19
- 239000010410 layer Substances 0.000 description 11
- 238000005755 formation reaction Methods 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 9
- 239000012071 phase Substances 0.000 description 9
- 230000006911 nucleation Effects 0.000 description 8
- 238000010899 nucleation Methods 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000011065 in-situ storage Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005424 photoluminescence Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000012625 in-situ measurement Methods 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- -1 halide compounds Chemical class 0.000 description 3
- 239000002346 layers by function Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000004847 absorption spectroscopy Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000002082 coherent anti-Stokes Raman spectroscopy Methods 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010574 gas phase reaction Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000002073 nanorod Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 229910015365 Au—Si Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000925 Cd alloy Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910017680 MgTe Inorganic materials 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000003421 catalytic decomposition reaction Methods 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/005—Growth of whiskers or needles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/62—Whiskers or needles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE1050466 | 2010-05-11 | ||
| SE1050466-0 | 2010-05-11 | ||
| PCT/SE2011/050599 WO2011142717A1 (en) | 2010-05-11 | 2011-05-11 | Gas-phase synthesis of wires |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016016818A Division JP2016121065A (ja) | 2010-05-11 | 2016-02-01 | ワイヤーの気相合成 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013526474A JP2013526474A (ja) | 2013-06-24 |
| JP2013526474A5 JP2013526474A5 (enExample) | 2014-06-26 |
| JP6313975B2 true JP6313975B2 (ja) | 2018-04-18 |
Family
ID=44914587
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013510045A Active JP6313975B2 (ja) | 2010-05-11 | 2011-05-11 | ワイヤーの気相合成 |
| JP2016016818A Pending JP2016121065A (ja) | 2010-05-11 | 2016-02-01 | ワイヤーの気相合成 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016016818A Pending JP2016121065A (ja) | 2010-05-11 | 2016-02-01 | ワイヤーの気相合成 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9447520B2 (enExample) |
| EP (1) | EP2569466A4 (enExample) |
| JP (2) | JP6313975B2 (enExample) |
| KR (1) | KR101777894B1 (enExample) |
| CN (2) | CN107090593A (enExample) |
| WO (1) | WO2011142717A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011142717A1 (en) * | 2010-05-11 | 2011-11-17 | Qunano Ab | Gas-phase synthesis of wires |
| US9610456B2 (en) | 2011-11-30 | 2017-04-04 | Neuronano Ab | Nanowire-based devices for light-induced and electrical stimulation of biological cells |
| US20140345686A1 (en) * | 2012-02-03 | 2014-11-27 | Qunano Ab | High-throughput continuous gas-phase synthesis of nanowires with tunable properties |
| TWI480224B (zh) * | 2012-02-03 | 2015-04-11 | Nat Univ Tsing Hua | 半導體奈米線製作方法與半導體奈米結構 |
| CN104380469B (zh) | 2012-04-12 | 2018-06-22 | 索尔伏打电流公司 | 纳米线官能化、分散和附着方法 |
| EP2855742B1 (en) | 2012-05-25 | 2016-12-14 | Sol Voltaics AB | Concentric flow reactor |
| US9224920B2 (en) | 2012-11-23 | 2015-12-29 | Lg Display Co., Ltd. | Quantum rod and method of fabricating the same |
| US9012883B2 (en) | 2012-12-21 | 2015-04-21 | Sol Voltaics Ab | Recessed contact to semiconductor nanowires |
| US9574135B2 (en) * | 2013-08-22 | 2017-02-21 | Nanoco Technologies Ltd. | Gas phase enhancement of emission color quality in solid state LEDs |
| WO2016071762A1 (en) * | 2014-11-07 | 2016-05-12 | Sol Voltaics Ab | Shell-enabled vertical alignment and precision-assembly of a close-packed colloidal crystal film |
| US9951420B2 (en) * | 2014-11-10 | 2018-04-24 | Sol Voltaics Ab | Nanowire growth system having nanoparticles aerosol generator |
| EP3260414A1 (en) | 2016-06-21 | 2017-12-27 | Sol Voltaics AB | Method for transferring nanowires from a fluid to a substrate surface |
| US20200295356A1 (en) * | 2019-03-11 | 2020-09-17 | Nanotek Instruments, Inc. | Process for producing semiconductor nanowires and carbon/semiconductor nanowire hybrid materials |
| EP3822395A1 (en) * | 2019-11-13 | 2021-05-19 | Fundación Imdea Materiales | Nanowires network |
| CN112820634B (zh) * | 2021-01-14 | 2024-01-16 | 镓特半导体科技（上海）有限公司 | 半导体结构、自支撑氮化镓层及其制备方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001155999A (ja) | 1999-11-25 | 2001-06-08 | Kanegafuchi Chem Ind Co Ltd | 半導体層の積層方法及び該積層装置 |
| US7301199B2 (en) * | 2000-08-22 | 2007-11-27 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
| WO2002017362A2 (en) * | 2000-08-22 | 2002-02-28 | President And Fellows Of Harvard College | Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices |
| US7374730B2 (en) * | 2001-03-26 | 2008-05-20 | National Research Council Of Canada | Process and apparatus for synthesis of nanotubes |
| US20020184969A1 (en) * | 2001-03-29 | 2002-12-12 | Kodas Toivo T. | Combinatorial synthesis of particulate materials |
| US6872645B2 (en) * | 2002-04-02 | 2005-03-29 | Nanosys, Inc. | Methods of positioning and/or orienting nanostructures |
| US7335908B2 (en) * | 2002-07-08 | 2008-02-26 | Qunano Ab | Nanostructures and methods for manufacturing the same |
| US7534488B2 (en) | 2003-09-10 | 2009-05-19 | The Regents Of The University Of California | Graded core/shell semiconductor nanorods and nanorod barcodes |
| US7335344B2 (en) * | 2003-03-14 | 2008-02-26 | Massachusetts Institute Of Technology | Method and apparatus for synthesizing filamentary structures |
| CA2522358A1 (en) * | 2003-04-04 | 2004-10-14 | Startskottet 22286 Ab | Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them |
| US20070157873A1 (en) * | 2003-09-12 | 2007-07-12 | Hauptmann Jonas R | Method of fabrication and device comprising elongated nanosize elements |
| KR100708644B1 (ko) | 2004-02-26 | 2007-04-17 | 삼성에스디아이 주식회사 | 박막 트랜지스터, 이를 구비한 평판 표시장치, 박막트랜지스터의 제조방법, 평판 표시장치의 제조방법, 및도너 시트의 제조방법 |
| FI121334B (fi) | 2004-03-09 | 2010-10-15 | Canatu Oy | Menetelmä ja laitteisto hiilinanoputkien valmistamiseksi |
| WO2006078281A2 (en) * | 2004-07-07 | 2006-07-27 | Nanosys, Inc. | Systems and methods for harvesting and integrating nanowires |
| FR2876751B1 (fr) | 2004-10-15 | 2007-01-19 | Centre Nat Rech Scient Cnrse | Appareil pour convertir l'energie des vagues en energie electrique |
| JP5483887B2 (ja) | 2006-03-08 | 2014-05-07 | クナノ アーベー | Ｓｉ上のエピタキシャルな半導体ナノワイヤの金属無しでの合成方法 |
| JP4871177B2 (ja) * | 2006-03-28 | 2012-02-08 | コリア インスティチュート オブ エナジー リサーチ | 超音波振動方式を用いたカーボンナノチューブ合成方法とその装置 |
| WO2008057558A2 (en) * | 2006-11-07 | 2008-05-15 | Nanosys, Inc. | Systems and methods for nanowire growth |
| US8409659B2 (en) * | 2006-12-01 | 2013-04-02 | GM Global Technology Operations LLC | Nanowire supported catalysts for fuel cell electrodes |
| CN101681813B (zh) * | 2007-01-12 | 2012-07-11 | 昆南诺股份有限公司 | 氮化物纳米线及其制造方法 |
| DE102007010286B4 (de) * | 2007-03-02 | 2013-09-05 | Freiberger Compound Materials Gmbh | Verfahren zum Herstellen eines Verbindungshalbleiterwerkstoffs, einer III-N-Schicht oder eines III-N-Bulkkristalls, Reaktor zur Herstellung des Verbindungshalbleiterwerkstoffs, Verbindungshalbleiterwerkstoff, III-N-Bulkkristall und III-N-Kristallschicht |
| KR101345440B1 (ko) * | 2007-03-15 | 2013-12-27 | 삼성전자주식회사 | 메조세공 템플릿을 이용한 나노 구조체의 대량 제조방법 및그에 의해 제조된 나노 구조체 |
| KR101475524B1 (ko) * | 2008-08-05 | 2014-12-23 | 삼성전자주식회사 | 실리콘 풍부산화물을 포함하는 나노와이어 및 그의제조방법 |
| WO2011142717A1 (en) | 2010-05-11 | 2011-11-17 | Qunano Ab | Gas-phase synthesis of wires |
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2011
- 2011-05-11 WO PCT/SE2011/050599 patent/WO2011142717A1/en not_active Ceased
- 2011-05-11 CN CN201710173361.XA patent/CN107090593A/zh active Pending
- 2011-05-11 EP EP11780888.1A patent/EP2569466A4/en not_active Withdrawn
- 2011-05-11 US US13/696,611 patent/US9447520B2/en not_active Expired - Fee Related
- 2011-05-11 JP JP2013510045A patent/JP6313975B2/ja active Active
- 2011-05-11 KR KR1020127031304A patent/KR101777894B1/ko not_active Expired - Fee Related
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Also Published As
| Publication number | Publication date |
|---|---|
| CN107090593A (zh) | 2017-08-25 |
| KR101777894B1 (ko) | 2017-09-13 |
| US20130098288A1 (en) | 2013-04-25 |
| US20170051432A1 (en) | 2017-02-23 |
| EP2569466A1 (en) | 2013-03-20 |
| JP2013526474A (ja) | 2013-06-24 |
| US9447520B2 (en) | 2016-09-20 |
| EP2569466A4 (en) | 2013-12-18 |
| WO2011142717A1 (en) | 2011-11-17 |
| CN102971452A (zh) | 2013-03-13 |
| US10036101B2 (en) | 2018-07-31 |
| JP2016121065A (ja) | 2016-07-07 |
| KR20130105295A (ko) | 2013-09-25 |
| CN102971452B (zh) | 2017-03-29 |
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