KR101777894B1 - 와이어의 기상 합성 - Google Patents

와이어의 기상 합성 Download PDF

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KR101777894B1
KR101777894B1 KR1020127031304A KR20127031304A KR101777894B1 KR 101777894 B1 KR101777894 B1 KR 101777894B1 KR 1020127031304 A KR1020127031304 A KR 1020127031304A KR 20127031304 A KR20127031304 A KR 20127031304A KR 101777894 B1 KR101777894 B1 KR 101777894B1
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South Korea
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growth
gas
wires
nanowires
nanowire
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KR20130105295A (ko
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라르스 사무엘손
마그너스 헤우린
마틴 마그누손
크누트 데페르트
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큐나노 에이비
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/62—Whiskers or needles

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020127031304A 2010-05-11 2011-05-11 와이어의 기상 합성 Expired - Fee Related KR101777894B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE1050466 2010-05-11
SE1050466-0 2010-05-11
PCT/SE2011/050599 WO2011142717A1 (en) 2010-05-11 2011-05-11 Gas-phase synthesis of wires

Publications (2)

Publication Number Publication Date
KR20130105295A KR20130105295A (ko) 2013-09-25
KR101777894B1 true KR101777894B1 (ko) 2017-09-13

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Country Status (6)

Country Link
US (2) US9447520B2 (enExample)
EP (1) EP2569466A4 (enExample)
JP (2) JP6313975B2 (enExample)
KR (1) KR101777894B1 (enExample)
CN (2) CN107090593A (enExample)
WO (1) WO2011142717A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011142717A1 (en) * 2010-05-11 2011-11-17 Qunano Ab Gas-phase synthesis of wires
US9610456B2 (en) 2011-11-30 2017-04-04 Neuronano Ab Nanowire-based devices for light-induced and electrical stimulation of biological cells
US20140345686A1 (en) * 2012-02-03 2014-11-27 Qunano Ab High-throughput continuous gas-phase synthesis of nanowires with tunable properties
TWI480224B (zh) * 2012-02-03 2015-04-11 Nat Univ Tsing Hua 半導體奈米線製作方法與半導體奈米結構
CN104380469B (zh) 2012-04-12 2018-06-22 索尔伏打电流公司 纳米线官能化、分散和附着方法
EP2855742B1 (en) 2012-05-25 2016-12-14 Sol Voltaics AB Concentric flow reactor
US9224920B2 (en) 2012-11-23 2015-12-29 Lg Display Co., Ltd. Quantum rod and method of fabricating the same
US9012883B2 (en) 2012-12-21 2015-04-21 Sol Voltaics Ab Recessed contact to semiconductor nanowires
US9574135B2 (en) * 2013-08-22 2017-02-21 Nanoco Technologies Ltd. Gas phase enhancement of emission color quality in solid state LEDs
WO2016071762A1 (en) * 2014-11-07 2016-05-12 Sol Voltaics Ab Shell-enabled vertical alignment and precision-assembly of a close-packed colloidal crystal film
US9951420B2 (en) * 2014-11-10 2018-04-24 Sol Voltaics Ab Nanowire growth system having nanoparticles aerosol generator
EP3260414A1 (en) 2016-06-21 2017-12-27 Sol Voltaics AB Method for transferring nanowires from a fluid to a substrate surface
US20200295356A1 (en) * 2019-03-11 2020-09-17 Nanotek Instruments, Inc. Process for producing semiconductor nanowires and carbon/semiconductor nanowire hybrid materials
EP3822395A1 (en) * 2019-11-13 2021-05-19 Fundación Imdea Materiales Nanowires network
CN112820634B (zh) * 2021-01-14 2024-01-16 镓特半导体科技（上海）有限公司 半导体结构、自支撑氮化镓层及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030089899A1 (en) * 2000-08-22 2003-05-15 Lieber Charles M. Nanoscale wires and related devices
US20040075464A1 (en) * 2002-07-08 2004-04-22 Btg International Limited Nanostructures and methods for manufacturing the same

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001155999A (ja) 1999-11-25 2001-06-08 Kanegafuchi Chem Ind Co Ltd 半導体層の積層方法及び該積層装置
WO2002017362A2 (en) * 2000-08-22 2002-02-28 President And Fellows Of Harvard College Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US7374730B2 (en) * 2001-03-26 2008-05-20 National Research Council Of Canada Process and apparatus for synthesis of nanotubes
US20020184969A1 (en) * 2001-03-29 2002-12-12 Kodas Toivo T. Combinatorial synthesis of particulate materials
US6872645B2 (en) * 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
US7534488B2 (en) 2003-09-10 2009-05-19 The Regents Of The University Of California Graded core/shell semiconductor nanorods and nanorod barcodes
US7335344B2 (en) * 2003-03-14 2008-02-26 Massachusetts Institute Of Technology Method and apparatus for synthesizing filamentary structures
CA2522358A1 (en) * 2003-04-04 2004-10-14 Startskottet 22286 Ab Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them
US20070157873A1 (en) * 2003-09-12 2007-07-12 Hauptmann Jonas R Method of fabrication and device comprising elongated nanosize elements
KR100708644B1 (ko) 2004-02-26 2007-04-17 삼성에스디아이 주식회사 박막 트랜지스터, 이를 구비한 평판 표시장치, 박막트랜지스터의 제조방법, 평판 표시장치의 제조방법, 및도너 시트의 제조방법
FI121334B (fi) 2004-03-09 2010-10-15 Canatu Oy Menetelmä ja laitteisto hiilinanoputkien valmistamiseksi
WO2006078281A2 (en) * 2004-07-07 2006-07-27 Nanosys, Inc. Systems and methods for harvesting and integrating nanowires
FR2876751B1 (fr) 2004-10-15 2007-01-19 Centre Nat Rech Scient Cnrse Appareil pour convertir l'energie des vagues en energie electrique
JP5483887B2 (ja) 2006-03-08 2014-05-07 クナノ アーベー Ｓｉ上のエピタキシャルな半導体ナノワイヤの金属無しでの合成方法
JP4871177B2 (ja) * 2006-03-28 2012-02-08 コリア インスティチュート オブ エナジー リサーチ 超音波振動方式を用いたカーボンナノチューブ合成方法とその装置
WO2008057558A2 (en) * 2006-11-07 2008-05-15 Nanosys, Inc. Systems and methods for nanowire growth
US8409659B2 (en) * 2006-12-01 2013-04-02 GM Global Technology Operations LLC Nanowire supported catalysts for fuel cell electrodes
CN101681813B (zh) * 2007-01-12 2012-07-11 昆南诺股份有限公司 氮化物纳米线及其制造方法
DE102007010286B4 (de) * 2007-03-02 2013-09-05 Freiberger Compound Materials Gmbh Verfahren zum Herstellen eines Verbindungshalbleiterwerkstoffs, einer III-N-Schicht oder eines III-N-Bulkkristalls, Reaktor zur Herstellung des Verbindungshalbleiterwerkstoffs, Verbindungshalbleiterwerkstoff, III-N-Bulkkristall und III-N-Kristallschicht
KR101345440B1 (ko) * 2007-03-15 2013-12-27 삼성전자주식회사 메조세공 템플릿을 이용한 나노 구조체의 대량 제조방법 및그에 의해 제조된 나노 구조체
KR101475524B1 (ko) * 2008-08-05 2014-12-23 삼성전자주식회사 실리콘 풍부산화물을 포함하는 나노와이어 및 그의제조방법
WO2011142717A1 (en) 2010-05-11 2011-11-17 Qunano Ab Gas-phase synthesis of wires

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030089899A1 (en) * 2000-08-22 2003-05-15 Lieber Charles M. Nanoscale wires and related devices
US20040075464A1 (en) * 2002-07-08 2004-04-22 Btg International Limited Nanostructures and methods for manufacturing the same

Also Published As

Publication number Publication date
CN107090593A (zh) 2017-08-25
US20130098288A1 (en) 2013-04-25
US20170051432A1 (en) 2017-02-23
EP2569466A1 (en) 2013-03-20
JP2013526474A (ja) 2013-06-24
US9447520B2 (en) 2016-09-20
EP2569466A4 (en) 2013-12-18
WO2011142717A1 (en) 2011-11-17
CN102971452A (zh) 2013-03-13
JP6313975B2 (ja) 2018-04-18
US10036101B2 (en) 2018-07-31
JP2016121065A (ja) 2016-07-07
KR20130105295A (ko) 2013-09-25
CN102971452B (zh) 2017-03-29

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