JP6308757B2 - 液晶表示パネルおよび液晶表示パネルの製造方法 - Google Patents

液晶表示パネルおよび液晶表示パネルの製造方法 Download PDF

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JP6308757B2
JP6308757B2 JP2013239443A JP2013239443A JP6308757B2 JP 6308757 B2 JP6308757 B2 JP 6308757B2 JP 2013239443 A JP2013239443 A JP 2013239443A JP 2013239443 A JP2013239443 A JP 2013239443A JP 6308757 B2 JP6308757 B2 JP 6308757B2
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electrode
insulating film
film
drain electrode
source electrode
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Japanese (ja)
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JP2015099287A (ja
JP2015099287A5 (enExample
Inventor
一司 山吉
一司 山吉
武司 園田
武司 園田
伸介 緒方
伸介 緒方
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2013239443A priority Critical patent/JP6308757B2/ja
Priority to US14/534,513 priority patent/US9564459B2/en
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Publication of JP2015099287A5 publication Critical patent/JP2015099287A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
JP2013239443A 2013-11-20 2013-11-20 液晶表示パネルおよび液晶表示パネルの製造方法 Active JP6308757B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013239443A JP6308757B2 (ja) 2013-11-20 2013-11-20 液晶表示パネルおよび液晶表示パネルの製造方法
US14/534,513 US9564459B2 (en) 2013-11-20 2014-11-06 Liquid crystal display panel and method for manufacturing liquid crystal display panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013239443A JP6308757B2 (ja) 2013-11-20 2013-11-20 液晶表示パネルおよび液晶表示パネルの製造方法

Publications (3)

Publication Number Publication Date
JP2015099287A JP2015099287A (ja) 2015-05-28
JP2015099287A5 JP2015099287A5 (enExample) 2016-12-28
JP6308757B2 true JP6308757B2 (ja) 2018-04-11

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US (1) US9564459B2 (enExample)
JP (1) JP6308757B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6208555B2 (ja) * 2013-11-18 2017-10-04 株式会社ジャパンディスプレイ 液晶表示装置
US10115746B2 (en) * 2014-01-08 2018-10-30 Sakai Display Products Corporation Manufacturing method for active matrix substrate, active matrix substrate and display apparatus
CN105511188A (zh) * 2016-02-01 2016-04-20 昆山龙腾光电有限公司 阵列基板和阵列基板的制作方法以及液晶显示装置
JP6775325B2 (ja) * 2016-05-13 2020-10-28 三菱電機株式会社 薄膜トランジスタ基板および液晶表示装置
CN108735762B (zh) * 2017-04-24 2021-06-15 瀚宇彩晶股份有限公司 画素结构
JP2019101243A (ja) 2017-12-04 2019-06-24 三菱電機株式会社 液晶表示パネルおよびその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007226175A (ja) 2006-01-26 2007-09-06 Epson Imaging Devices Corp 液晶装置及び電子機器
JP4544251B2 (ja) * 2007-02-27 2010-09-15 ソニー株式会社 液晶表示素子および表示装置
JP5285280B2 (ja) * 2008-01-07 2013-09-11 株式会社ジャパンディスプレイウェスト 液晶表示装置及び液晶表示装置の製造方法
KR101881020B1 (ko) * 2010-12-02 2018-07-24 삼성디스플레이 주식회사 액정 표시 장치 및 그 형성 방법
US9064962B2 (en) * 2010-12-09 2015-06-23 Sharp Kabushiki Kaisha Thin film transistor array substrate
US8760595B2 (en) 2011-09-09 2014-06-24 Lg Display Co., Ltd. Array substrate for fringe field switching mode liquid crystal display device and method for fabricating the same
KR101905757B1 (ko) * 2011-11-17 2018-10-10 엘지디스플레이 주식회사 에프에프에스 방식 액정표시장치용 어레이기판 및 그 제조방법
JP6291950B2 (ja) * 2014-03-25 2018-03-14 セイコーエプソン株式会社 印刷媒体、印刷装置および印刷装置の印刷方法

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JP2015099287A (ja) 2015-05-28
US20150138481A1 (en) 2015-05-21
US9564459B2 (en) 2017-02-07

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