JP6305423B2 - 相対的なクリティカルディメンションの測定のための方法および装置 - Google Patents

相対的なクリティカルディメンションの測定のための方法および装置 Download PDF

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JP6305423B2
JP6305423B2 JP2015545153A JP2015545153A JP6305423B2 JP 6305423 B2 JP6305423 B2 JP 6305423B2 JP 2015545153 A JP2015545153 A JP 2015545153A JP 2015545153 A JP2015545153 A JP 2015545153A JP 6305423 B2 JP6305423 B2 JP 6305423B2
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JP2016502094A (ja
JP2016502094A5 (enExample
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ホン シヤオ
ホン シヤオ
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KLA Corp
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KLA Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/222—Image processing arrangements associated with the tube
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H01J2237/221—Image processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24578—Spatial variables, e.g. position, distance

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP2015545153A 2012-11-30 2013-11-25 相対的なクリティカルディメンションの測定のための方法および装置 Active JP6305423B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261731580P 2012-11-30 2012-11-30
US61/731,580 2012-11-30
US13/772,929 2013-02-21
US13/772,929 US8884223B2 (en) 2012-11-30 2013-02-21 Methods and apparatus for measurement of relative critical dimensions
PCT/US2013/071733 WO2014085343A1 (en) 2012-11-30 2013-11-25 Methods and apparatus for measurement of relative critical dimensions

Publications (3)

Publication Number Publication Date
JP2016502094A JP2016502094A (ja) 2016-01-21
JP2016502094A5 JP2016502094A5 (enExample) 2017-01-12
JP6305423B2 true JP6305423B2 (ja) 2018-04-04

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JP2015545153A Active JP6305423B2 (ja) 2012-11-30 2013-11-25 相対的なクリティカルディメンションの測定のための方法および装置

Country Status (8)

Country Link
US (1) US8884223B2 (enExample)
JP (1) JP6305423B2 (enExample)
KR (1) KR102001715B1 (enExample)
DE (1) DE112013005748B4 (enExample)
IL (1) IL239094B (enExample)
SG (1) SG11201504253PA (enExample)
TW (1) TWI611162B (enExample)
WO (1) WO2014085343A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10304178B2 (en) 2015-09-18 2019-05-28 Taiwan Semiconductor Manfacturing Company, Ltd. Method and system for diagnosing a semiconductor wafer
US10997712B2 (en) * 2018-01-18 2021-05-04 Canon Virginia, Inc. Devices, systems, and methods for anchor-point-enabled multi-scale subfield alignment
KR102702714B1 (ko) * 2019-05-21 2024-09-05 어플라이드 머티어리얼스, 인코포레이티드 강화된 단면 특징 측정 방법론

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US5367578A (en) * 1991-09-18 1994-11-22 Ncr Corporation System and method for optical recognition of bar-coded characters using template matching
US5736863A (en) 1996-06-19 1998-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. Abatement of electron beam charging distortion during dimensional measurements of integrated circuit patterns with scanning electron microscopy by the utilization of specially designed test structures
US5969273A (en) 1998-02-12 1999-10-19 International Business Machines Corporation Method and apparatus for critical dimension and tool resolution determination using edge width
US7133549B2 (en) * 1999-04-05 2006-11-07 Applied Materials, Inc. Local bias map using line width measurements
US6277661B1 (en) * 2000-06-29 2001-08-21 Advanced Micro Devices, Inc. Method for detecting sloped contact holes using a critical-dimension waveform
JP4979819B2 (ja) * 2000-09-12 2012-07-18 キヤノン株式会社 色処理装置およびその方法
US6774365B2 (en) 2001-03-28 2004-08-10 Advanced Micro Devices, Inc. SEM inspection and analysis of patterned photoresist features
US6784425B1 (en) 2001-06-29 2004-08-31 Kla-Tencor Technologies Corporation Energy filter multiplexing
US7274820B2 (en) * 2001-09-26 2007-09-25 Kabushiki Kaisha Toshiba Pattern evaluation system, pattern evaluation method and program
KR100498706B1 (ko) * 2003-02-04 2005-07-01 동부아남반도체 주식회사 이미지 프로세싱을 이용한 웨이퍼 정렬 방법
JP4769725B2 (ja) * 2003-10-08 2011-09-07 アプライド マテリアルズ イスラエル リミテッド 測定システム及び方法
KR20060017087A (ko) 2004-08-19 2006-02-23 삼성전자주식회사 웨이퍼의 임계치수검출방법
KR100663367B1 (ko) * 2005-12-06 2007-01-02 삼성전자주식회사 반도체소자의 시디 측정방법 및 관련된 측정기
KR100697554B1 (ko) 2006-02-14 2007-03-21 삼성전자주식회사 임계 치수 측정 방법
JP4825734B2 (ja) * 2007-06-15 2011-11-30 株式会社日立ハイテクノロジーズ 異種計測装置間のキャリブレーション方法及びそのシステム
JP4971050B2 (ja) * 2007-06-21 2012-07-11 株式会社日立製作所 半導体装置の寸法測定装置
JP4586051B2 (ja) * 2007-08-03 2010-11-24 株式会社日立ハイテクノロジーズ 走査型電子顕微鏡
KR20100024087A (ko) 2008-08-25 2010-03-05 삼성전자주식회사 반도체 공정 제어 방법
JP5429869B2 (ja) * 2008-12-22 2014-02-26 株式会社 Ｎｇｒ パターン検査装置および方法
JP2011101254A (ja) * 2009-11-06 2011-05-19 Seiko Epson Corp 測色器を備えた印刷装置における同測色器の補正装置、測色器の補正用ｌｕｔ
US8294125B2 (en) 2009-11-18 2012-10-23 Kla-Tencor Corporation High-sensitivity and high-throughput electron beam inspection column enabled by adjustable beam-limiting aperture
KR101662306B1 (ko) 2010-11-02 2016-10-10 삼성전자주식회사 패턴의 선폭 측정 방법 및 이를 수행하기 위한 선폭 측정 장치
KR20120068128A (ko) * 2010-12-17 2012-06-27 삼성전자주식회사 패턴의 결함 검출 방법 및 이를 수행하기 위한 결함 검출 장치
JP5537443B2 (ja) * 2011-01-04 2014-07-02 株式会社東芝 Ｅｕｖマスク用ブランクの良否判定方法及びｅｕｖマスクの製造方法
US8432441B2 (en) 2011-02-22 2013-04-30 Hermes Microvision Inc. Method and system for measuring critical dimension and monitoring fabrication uniformity

Also Published As

Publication number Publication date
DE112013005748B4 (de) 2022-05-05
IL239094B (en) 2018-08-30
DE112013005748T5 (de) 2015-09-10
IL239094A0 (en) 2015-07-30
WO2014085343A1 (en) 2014-06-05
SG11201504253PA (en) 2015-06-29
KR102001715B1 (ko) 2019-07-18
US20140151551A1 (en) 2014-06-05
JP2016502094A (ja) 2016-01-21
TW201428233A (zh) 2014-07-16
KR20150089083A (ko) 2015-08-04
US8884223B2 (en) 2014-11-11
TWI611162B (zh) 2018-01-11

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