SG11201504253PA - Methods and apparatus for measurement of relative critical dimensions - Google Patents

Methods and apparatus for measurement of relative critical dimensions

Info

Publication number
SG11201504253PA
SG11201504253PA SG11201504253PA SG11201504253PA SG11201504253PA SG 11201504253P A SG11201504253P A SG 11201504253PA SG 11201504253P A SG11201504253P A SG 11201504253PA SG 11201504253P A SG11201504253P A SG 11201504253PA SG 11201504253P A SG11201504253P A SG 11201504253PA
Authority
SG
Singapore
Prior art keywords
measurement
methods
critical dimensions
relative critical
relative
Prior art date
Application number
SG11201504253PA
Inventor
Hong Xiao
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG11201504253PA publication Critical patent/SG11201504253PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical or photographic arrangements associated with the tube
    • H01J37/222—Image processing arrangements associated with the tube
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H01J2237/221—Image processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24578—Spatial variables, e.g. position, distance
SG11201504253PA 2012-11-30 2013-11-25 Methods and apparatus for measurement of relative critical dimensions SG11201504253PA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261731580P 2012-11-30 2012-11-30
US13/772,929 US8884223B2 (en) 2012-11-30 2013-02-21 Methods and apparatus for measurement of relative critical dimensions
PCT/US2013/071733 WO2014085343A1 (en) 2012-11-30 2013-11-25 Methods and apparatus for measurement of relative critical dimensions

Publications (1)

Publication Number Publication Date
SG11201504253PA true SG11201504253PA (en) 2015-06-29

Family

ID=50824514

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201504253PA SG11201504253PA (en) 2012-11-30 2013-11-25 Methods and apparatus for measurement of relative critical dimensions

Country Status (8)

Country Link
US (1) US8884223B2 (en)
JP (1) JP6305423B2 (en)
KR (1) KR102001715B1 (en)
DE (1) DE112013005748B4 (en)
IL (1) IL239094B (en)
SG (1) SG11201504253PA (en)
TW (1) TWI611162B (en)
WO (1) WO2014085343A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10304178B2 (en) 2015-09-18 2019-05-28 Taiwan Semiconductor Manfacturing Company, Ltd. Method and system for diagnosing a semiconductor wafer
US10997712B2 (en) * 2018-01-18 2021-05-04 Canon Virginia, Inc. Devices, systems, and methods for anchor-point-enabled multi-scale subfield alignment
WO2020237105A1 (en) * 2019-05-21 2020-11-26 Applied Materials, Inc. Enhanced cross sectional features measurement methodology

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5367578A (en) * 1991-09-18 1994-11-22 Ncr Corporation System and method for optical recognition of bar-coded characters using template matching
US5736863A (en) 1996-06-19 1998-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. Abatement of electron beam charging distortion during dimensional measurements of integrated circuit patterns with scanning electron microscopy by the utilization of specially designed test structures
US5969273A (en) 1998-02-12 1999-10-19 International Business Machines Corporation Method and apparatus for critical dimension and tool resolution determination using edge width
US7133549B2 (en) * 1999-04-05 2006-11-07 Applied Materials, Inc. Local bias map using line width measurements
US6277661B1 (en) * 2000-06-29 2001-08-21 Advanced Micro Devices, Inc. Method for detecting sloped contact holes using a critical-dimension waveform
JP4979819B2 (en) * 2000-09-12 2012-07-18 キヤノン株式会社 Color processing apparatus and method
US6774365B2 (en) 2001-03-28 2004-08-10 Advanced Micro Devices, Inc. SEM inspection and analysis of patterned photoresist features
US6784425B1 (en) 2001-06-29 2004-08-31 Kla-Tencor Technologies Corporation Energy filter multiplexing
US7274820B2 (en) * 2001-09-26 2007-09-25 Kabushiki Kaisha Toshiba Pattern evaluation system, pattern evaluation method and program
KR100498706B1 (en) * 2003-02-04 2005-07-01 동부아남반도체 주식회사 Wafer alignment method by using image processing
KR101128558B1 (en) * 2003-10-08 2012-03-26 어플라이드 머티리얼즈 이스라엘 리미티드 A measurement system and a method
KR20060017087A (en) 2004-08-19 2006-02-23 삼성전자주식회사 Critical dimension detect method for wafer
KR100663367B1 (en) * 2005-12-06 2007-01-02 삼성전자주식회사 Method for measuring critical dimension of semiconductor device and related apparatus
KR100697554B1 (en) 2006-02-14 2007-03-21 삼성전자주식회사 Method of measuring a critical dimension
JP4825734B2 (en) * 2007-06-15 2011-11-30 株式会社日立ハイテクノロジーズ Calibration method and system between different types of measuring devices
JP4971050B2 (en) * 2007-06-21 2012-07-11 株式会社日立製作所 Semiconductor device dimension measuring device
JP4586051B2 (en) * 2007-08-03 2010-11-24 株式会社日立ハイテクノロジーズ Scanning electron microscope
KR20100024087A (en) 2008-08-25 2010-03-05 삼성전자주식회사 Method of controlling a semiconductor process
JP5429869B2 (en) * 2008-12-22 2014-02-26 株式会社 Ｎｇｒ Pattern inspection apparatus and method
JP2011101254A (en) * 2009-11-06 2011-05-19 Seiko Epson Corp Correction unit for color measurement unit mounted in printing apparatus equipped with the color measurement unit, and correction lut for color measurement unit
US8294125B2 (en) 2009-11-18 2012-10-23 Kla-Tencor Corporation High-sensitivity and high-throughput electron beam inspection column enabled by adjustable beam-limiting aperture
KR101662306B1 (en) 2010-11-02 2016-10-10 삼성전자주식회사 Method of measuring critical dimension of pattern and apparatus for performing the method
KR20120068128A (en) * 2010-12-17 2012-06-27 삼성전자주식회사 Method of detecting defect in pattern and apparatus for performing the method
JP5537443B2 (en) * 2011-01-04 2014-07-02 株式会社東芝 EUV mask blank quality determination method and EUV mask manufacturing method
US8432441B2 (en) 2011-02-22 2013-04-30 Hermes Microvision Inc. Method and system for measuring critical dimension and monitoring fabrication uniformity

Also Published As

Publication number Publication date
DE112013005748B4 (en) 2022-05-05
TWI611162B (en) 2018-01-11
JP6305423B2 (en) 2018-04-04
KR102001715B1 (en) 2019-07-18
WO2014085343A1 (en) 2014-06-05
DE112013005748T5 (en) 2015-09-10
JP2016502094A (en) 2016-01-21
IL239094B (en) 2018-08-30
KR20150089083A (en) 2015-08-04
IL239094A0 (en) 2015-07-30
TW201428233A (en) 2014-07-16
US20140151551A1 (en) 2014-06-05
US8884223B2 (en) 2014-11-11

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