JP6295130B2 - ドライエッチング方法 - Google Patents

ドライエッチング方法 Download PDF

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Publication number
JP6295130B2
JP6295130B2 JP2014087999A JP2014087999A JP6295130B2 JP 6295130 B2 JP6295130 B2 JP 6295130B2 JP 2014087999 A JP2014087999 A JP 2014087999A JP 2014087999 A JP2014087999 A JP 2014087999A JP 6295130 B2 JP6295130 B2 JP 6295130B2
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gas
flow rate
silicon nitride
dry etching
nitride film
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Japanese (ja)
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JP2015207688A5 (https=
JP2015207688A (ja
Inventor
ゼ 申
ゼ 申
久夫 安並
久夫 安並
小野　哲郎
哲郎 小野
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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JP2014087999A 2014-04-22 2014-04-22 ドライエッチング方法 Active JP6295130B2 (ja)

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JP2015207688A JP2015207688A (ja) 2015-11-19
JP2015207688A5 JP2015207688A5 (https=) 2017-01-19
JP6295130B2 true JP6295130B2 (ja) 2018-03-14

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9865484B1 (en) * 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
WO2019028136A1 (en) * 2017-08-04 2019-02-07 Lam Research Corporation SELECTIVE DEPOSITION OF SILICON NITRIDE ON HORIZONTAL SURFACES

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4376672A (en) * 1981-10-26 1983-03-15 Applied Materials, Inc. Materials and methods for plasma etching of oxides and nitrides of silicon
JPH0722149B2 (ja) * 1983-11-28 1995-03-08 株式会社日立製作所 平行平板形ドライエッチング装置
JP2974512B2 (ja) * 1992-08-21 1999-11-10 日新電機株式会社 エッチング方法及び装置
US6051504A (en) * 1997-08-15 2000-04-18 International Business Machines Corporation Anisotropic and selective nitride etch process for high aspect ratio features in high density plasma
US6461529B1 (en) * 1999-04-26 2002-10-08 International Business Machines Corporation Anisotropic nitride etch process with high selectivity to oxide and photoresist layers in a damascene etch scheme
JP3439455B2 (ja) * 2000-12-18 2003-08-25 Ｎｅｃエレクトロニクス株式会社 異方性ドライエッチング方法
WO2011108663A1 (ja) * 2010-03-04 2011-09-09 東京エレクトロン株式会社 プラズマエッチング方法、半導体デバイスの製造方法、及びプラズマエッチング装置
US8999856B2 (en) * 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
JP5802454B2 (ja) * 2011-06-30 2015-10-28 株式会社日立ハイテクノロジーズ プラズマ処理方法

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