JP6285021B2 - 低電磁干渉配線を有するダイパッケージ - Google Patents
低電磁干渉配線を有するダイパッケージ Download PDFInfo
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- JP6285021B2 JP6285021B2 JP2016522338A JP2016522338A JP6285021B2 JP 6285021 B2 JP6285021 B2 JP 6285021B2 JP 2016522338 A JP2016522338 A JP 2016522338A JP 2016522338 A JP2016522338 A JP 2016522338A JP 6285021 B2 JP6285021 B2 JP 6285021B2
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- die
- lead
- metal core
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- dielectric
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Landscapes
- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Wire Bonding (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Description
図9(A)は、裸ワイヤボンド502、30オームの同軸線504および50オームの同軸線506について、周波数の関数としてクロストーク特性を比較するグラフ500である。両同軸リード線は、シールドされていない配線に比べて約25dB改善したクロストーク/絶縁特性を示す。この点において、本発明によって作製された不整合な同軸リード線でさえも、シールドされない裸リード線よりも優れている。
例2−図12は、2つのグランドプレーン1200、1202を有する実施形態の一例を示し、両方とも、両リード線端部での接続を可能にするためにパッケージ基板1204からダイ1206に延出している。
Claims (19)
- 複数の接続パッドを有するダイ(152;120;162a−d;170;416)と、
複数の接続要素を支持するダイ基板(154;102;418)と、
第1の金属コア径を持つ第1の金属コア、前記第1の金属コアを被覆する第1の誘電体厚を持つ第1の誘電体層、および、前記第1の誘電体層を被覆する第1の外側金属層を有し、前記第1の外側金属層が第1のグランドプレーンに接続されている第1のリード線(156;110;164a;166a;176;412)と、
第2の金属コア径を持つ第2の金属コア、前記第2の金属コアを被覆する第2の誘電体厚を持つ第2の誘電体層、および、前記第2の誘電体層を被覆する第2の外側金属層を有し、前記第2の外側金属層が第2のグランドプレーンに接続されている第2のリード線(156;112;164b;166b;176;414)と、
を備え、
前記第1のリード線と前記第2のリード線との間のEMIおよびクロストークへの感受性が低減されるダイパッケージ(150;100;160;180;182;410;440;1100)において、
前記第1のグランドプレーンと前記第2のグランドプレーンは、電気的には分離されているが、物理的にはオーバーラップしていることを特徴とするダイパッケージ。 - 前記第1のリード線(1110、1112)は、第1のダイから前記ダイ基板(1102)上の前記複数の接続要素のうちの1つに延出し、
前記第2のリード線(1114)は、第2のダイから前記ダイ基板(1102)上の前記複数の接続要素のうちの1つに延出し、
前記第1のグランドプレーン(1130、1136)は、前記第1の外側金属層に取り付けられ、
前記第2のグランドプレーン(1132、1134)は、前記第2の外側金属層に取り付けられる請求項1に記載のダイパッケージ(1100)。 - 前記第2のグランドプレーン(1134)は、前記第1のグランドプレーン(1136)に重なり合っている請求項2に記載のダイパッケージ(1100)。
- 前記第1のグランドプレーンと前記第2のグランドプレーンとの間の電気絶縁を維持する仲介層(1138)を有する請求項3に記載のダイパッケージ(1100)。
- 複数の接続パッドを有するダイ(152;120;162a−d;170;416)と、
複数の接続要素を支持するダイ基板(154;102;418)と、
第1の金属コア径を持つ第1の金属コア、前記第1の金属コアを被覆する第1の誘電体厚を持つ第1の誘電体層、および、前記第1の誘電体層を被覆する第1の外側金属層を有し、前記第1の外側金属層が第1のグランドプレーンに接続されている第1のリード線(156;110;164a;166a;176;412)と、
第2の金属コア径を持つ第2の金属コア、前記第2の金属コアを被覆する第2の誘電体厚を持つ第2の誘電体層、および、前記第2の誘電体層を被覆する第2の外側金属層を有し、前記第2の外側金属層が第2のグランドプレーンに接続されている第2のリード線(156;112;164b;166b;176;414)と、
を備え、
前記第1のリード線と前記第2のリード線との間のEMIおよびクロストークへの感受性が低減されるダイパッケージ(150;100;160;180;182;410;440;1100)において、
前記第1のリード線(1110、1112)は、第1のダイから前記ダイ基板(1102)上の前記複数の接続要素のうちの1つに延出し、
前記第2のリード線(1114)は、第2のダイから前記ダイ基板(1102)上の前記複数の接続要素のうちの1つに延出し、
前記第1のグランドプレーン(1130、1136)は、前記第1の外側金属層に取り付けられ、
前記第2のグランドプレーン(1132、1134)は、前記第2の外側金属層に取り付けられ、
更に、前記第2のグランドプレーン(1134)は、前記第1のグランドプレーン(1136)に重なり合っていることを特徴とするダイパッケージ(1100)。 - 前記第1のグランドプレーンと前記第2のグランドプレーンとの間の電気絶縁を維持する仲介層(1138)を有する請求項5に記載のダイパッケージ(1100)。
- 前記ダイパッケージは、第1のダイと第2のダイとを有し、前記第1のダイと前記第2のダイは、それぞれ複数の接続パッドを有し、
前記第1のリード線は、前記第1のダイから前記ダイ基板上の前記複数の接続要素のうちの1つに延出するか、または、前記第2のダイの前記複数の接続パッドのうちの1つに延出し、
前記第2のリード線は、前記第2のダイから前記ダイ基板上の前記複数の接続要素のうちの1つに延出、または、前記第1のダイの前記複数の接続パッドのうちの1つに延出することを特徴とする請求項1から6の何れか一項に記載のダイパッケージ。 - 前記ダイパッケージは、スタックドダイパッケージであることを特徴とする請求項7に記載のダイパッケージ。
- 前記第1の金属コア径は、前記第2の金属コア径とは異なる、または、前記第1の金属コア径は、前記第2の金属コア径と同じである請求項1から8のいずれか一項に記載のダイパッケージ。
- 前記第1の誘電体厚は、前記第2の誘電体厚とは異なる、または、前記第1の誘電体厚は、前記第2の誘電体厚と同じである請求項1から9のいずれか一項に記載のダイパッケージ。
- 前記ダイ基板は、BGAパッケージの形成を可能にする充填されたビアを有する請求項1から10のいずれか一項に記載のダイパッケージ。
- 前記ダイ基板は、リードフレームパッケージを形成するリードフレームを有する請求項1から10のいずれか一項に記載のダイパッケージ。
- 前記第1のリード線は、前記第2のリード線に交差する、および/または、前記第2のリード線の上にある請求項1から12のいずれか一項に記載のダイパッケージ。
- 前記第1のリード線は、第1の長さと第1のインピーダンスとを有し、前記第2のリード線は、第2の長さと第2のインピーダンスとを有し、
前記第1の長さは前記第2の長さとは異なり、および/または、前記第1のインピーダンスは前記第2のインピーダンスとは異なる請求項1から13のいずれか一項に記載のダイパッケージ。 - 前記第1の金属コアおよび/または前記第2の金属コアは、誘電体層と導電金属層とで逐次被覆される請求項1から14のいずれか一項に記載のダイパッケージ。
- 前記リード線は、ダイからダイへの接続および/またはダイから基板への接続のための電気的伝達を提供する請求項1から15のいずれか一項に記載のダイパッケージ。
- 複数の前記リード線は、少なくとも1つのディファレンシャルペアを有する請求項1から16のいずれか一項に記載のダイパッケージ。
- 複数の前記リード線は、クロストークが低減された、クロスオーバー型の長ループ面外リード線を有する請求項1から17のいずれか一項に記載のダイパッケージ。
- 請求項1から11及び請求項13から18のいずれか一項に記載のダイパッケージを有する優れたEMI性能のBGAパッケージであって、
前記ダイパッケージは、複数のリード線を有し、それぞれの前記リード線は、金属コアと、前記金属コアを被覆する誘電体層と、接地接続された外側金属層とを有し、前記金属コアを被覆する外側金属層を持つ誘電体層がないリード線よりもクロストークノイズが少なくとも5dB低減されるBGAパッケージ。
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US61/842,944 | 2013-07-03 | ||
PCT/EP2014/001825 WO2015000596A1 (en) | 2013-07-03 | 2014-07-02 | Die package with low electromagnetic interference interconnection |
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