JP6276658B2 - 膜厚測定機能付き基板及び絶縁層の膜厚測定方法 - Google Patents
膜厚測定機能付き基板及び絶縁層の膜厚測定方法 Download PDFInfo
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- JP6276658B2 JP6276658B2 JP2014141569A JP2014141569A JP6276658B2 JP 6276658 B2 JP6276658 B2 JP 6276658B2 JP 2014141569 A JP2014141569 A JP 2014141569A JP 2014141569 A JP2014141569 A JP 2014141569A JP 6276658 B2 JP6276658 B2 JP 6276658B2
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- insulating layer
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- 238000000034 method Methods 0.000 title claims description 51
- 239000000758 substrate Substances 0.000 title claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 96
- 239000002184 metal Substances 0.000 claims description 96
- 238000005259 measurement Methods 0.000 claims description 67
- 239000000523 sample Substances 0.000 claims description 28
- 239000011347 resin Substances 0.000 claims description 27
- 229920005989 resin Polymers 0.000 claims description 27
- 230000015572 biosynthetic process Effects 0.000 claims description 22
- 239000004020 conductor Substances 0.000 claims description 19
- 238000011088 calibration curve Methods 0.000 claims description 10
- 238000000691 measurement method Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 302
- 239000010408 film Substances 0.000 description 128
- 239000011229 interlayer Substances 0.000 description 59
- 229920001721 polyimide Polymers 0.000 description 14
- 239000004642 Polyimide Substances 0.000 description 12
- 238000007747 plating Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000009413 insulation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000010828 elution Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 235000013405 beer Nutrition 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Landscapes
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Priority Applications (1)
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JP2014141569A JP6276658B2 (ja) | 2014-07-09 | 2014-07-09 | 膜厚測定機能付き基板及び絶縁層の膜厚測定方法 |
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JP2014141569A JP6276658B2 (ja) | 2014-07-09 | 2014-07-09 | 膜厚測定機能付き基板及び絶縁層の膜厚測定方法 |
Publications (3)
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JP2016017882A JP2016017882A (ja) | 2016-02-01 |
JP2016017882A5 JP2016017882A5 (enrdf_load_stackoverflow) | 2017-04-20 |
JP6276658B2 true JP6276658B2 (ja) | 2018-02-07 |
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JP2014141569A Active JP6276658B2 (ja) | 2014-07-09 | 2014-07-09 | 膜厚測定機能付き基板及び絶縁層の膜厚測定方法 |
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JP (1) | JP6276658B2 (enrdf_load_stackoverflow) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6793103B2 (ja) | 2017-09-29 | 2020-12-02 | ミネベアミツミ株式会社 | ひずみゲージ |
JP2019066312A (ja) | 2017-09-29 | 2019-04-25 | ミネベアミツミ株式会社 | ひずみゲージ |
JP2019066454A (ja) | 2017-09-29 | 2019-04-25 | ミネベアミツミ株式会社 | ひずみゲージ、センサモジュール |
JP2019066453A (ja) * | 2017-09-29 | 2019-04-25 | ミネベアミツミ株式会社 | ひずみゲージ |
JP2019082424A (ja) | 2017-10-31 | 2019-05-30 | ミネベアミツミ株式会社 | ひずみゲージ |
JP2019113411A (ja) | 2017-12-22 | 2019-07-11 | ミネベアミツミ株式会社 | ひずみゲージ、センサモジュール |
JP2019184344A (ja) | 2018-04-05 | 2019-10-24 | ミネベアミツミ株式会社 | ひずみゲージ及びその製造方法 |
JPWO2020085247A1 (ja) | 2018-10-23 | 2021-09-16 | ミネベアミツミ株式会社 | アクセルペダル、ステアリング、ドア、ドア開閉システム |
JP7263220B2 (ja) * | 2019-11-29 | 2023-04-24 | 新光電気工業株式会社 | シランカップリング被膜の膜厚推定方法 |
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JP2007107976A (ja) * | 2005-10-13 | 2007-04-26 | Canon Inc | 紙種判別装置 |
RU2457472C2 (ru) * | 2006-11-21 | 2012-07-27 | Джи-И Хелткер Био-Сайенсиз Корп. | Сборка и использование rfid-датчиков в контейнерах |
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