JP6265655B2 - 検出装置及び検出システム - Google Patents

検出装置及び検出システム Download PDF

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Publication number
JP6265655B2
JP6265655B2 JP2013174676A JP2013174676A JP6265655B2 JP 6265655 B2 JP6265655 B2 JP 6265655B2 JP 2013174676 A JP2013174676 A JP 2013174676A JP 2013174676 A JP2013174676 A JP 2013174676A JP 6265655 B2 JP6265655 B2 JP 6265655B2
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Japan
Prior art keywords
thin film
film transistor
electrically connected
drain
wiring
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JP2013174676A
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English (en)
Japanese (ja)
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JP2014096566A (ja
JP2014096566A5 (enExample
Inventor
渡辺　実
実 渡辺
啓吾 横山
啓吾 横山
将人 大藤
将人 大藤
潤 川鍋
潤 川鍋
健太郎 藤吉
健太郎 藤吉
弘 和山
弘 和山
望月　千織
千織 望月
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2013174676A priority Critical patent/JP6265655B2/ja
Priority to US14/048,200 priority patent/US9450002B2/en
Priority to CN201310465678.2A priority patent/CN103716551B/zh
Publication of JP2014096566A publication Critical patent/JP2014096566A/ja
Publication of JP2014096566A5 publication Critical patent/JP2014096566A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2013174676A 2012-10-09 2013-08-26 検出装置及び検出システム Active JP6265655B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013174676A JP6265655B2 (ja) 2012-10-09 2013-08-26 検出装置及び検出システム
US14/048,200 US9450002B2 (en) 2012-10-09 2013-10-08 Detecting apparatus and detecting system
CN201310465678.2A CN103716551B (zh) 2012-10-09 2013-10-09 检测装置和检测系统

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012224238 2012-10-09
JP2012224238 2012-10-09
JP2013174676A JP6265655B2 (ja) 2012-10-09 2013-08-26 検出装置及び検出システム

Publications (3)

Publication Number Publication Date
JP2014096566A JP2014096566A (ja) 2014-05-22
JP2014096566A5 JP2014096566A5 (enExample) 2016-09-23
JP6265655B2 true JP6265655B2 (ja) 2018-01-24

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Family Applications (1)

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JP2013174676A Active JP6265655B2 (ja) 2012-10-09 2013-08-26 検出装置及び検出システム

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US (1) US9450002B2 (enExample)
JP (1) JP6265655B2 (enExample)
CN (1) CN103716551B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10515606B2 (en) 2016-09-28 2019-12-24 Samsung Electronics Co., Ltd. Parallelizing display update
JP7209170B2 (ja) * 2017-06-29 2023-01-20 パナソニックＩｐマネジメント株式会社 光検出装置、及び撮像装置
JP7319825B2 (ja) * 2019-05-17 2023-08-02 キヤノン株式会社 放射線撮像装置および放射線撮像システム
US11843022B2 (en) * 2020-12-03 2023-12-12 Sharp Kabushiki Kaisha X-ray imaging panel and method of manufacturing X-ray imaging panel
CN114973302B (zh) * 2021-02-18 2025-09-19 群创光电股份有限公司 生物识别感测装置及包括其的显示装置
US11916094B2 (en) * 2021-08-02 2024-02-27 Sharp Display Technology Corporation Photoelectric conversion panel and method for manufacturing photoelectric conversion panel

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05235319A (ja) * 1992-02-21 1993-09-10 Hitachi Ltd 密着形二次元イメージセンサ
GB9209734D0 (en) * 1992-05-06 1992-06-17 Philips Electronics Uk Ltd An image sensor
JPH11307756A (ja) * 1998-02-20 1999-11-05 Canon Inc 光電変換装置および放射線読取装置
JPH11331703A (ja) * 1998-03-20 1999-11-30 Toshiba Corp 撮像装置
EP1185888B1 (en) * 2000-02-02 2012-03-14 Koninklijke Philips Electronics N.V. Sensor and method of operating the sensor
JP4724313B2 (ja) * 2001-05-18 2011-07-13 キヤノン株式会社 撮像装置、放射線撮像装置及びそれを用いた放射線撮像システム
GB0300056D0 (en) * 2003-01-03 2003-02-05 Koninkl Philips Electronics Nv Image sensor
JP2005175418A (ja) 2003-11-19 2005-06-30 Canon Inc 光電変換装置
JP4793281B2 (ja) 2007-02-21 2011-10-12 ソニー株式会社 撮像装置および表示装置
KR20090040158A (ko) * 2007-10-19 2009-04-23 삼성전자주식회사 투명한 트랜지스터를 구비한 시모스 이미지 센서
JP5096946B2 (ja) 2008-01-30 2012-12-12 浜松ホトニクス株式会社 固体撮像装置
JP5119000B2 (ja) 2008-02-26 2013-01-16 オリンパス株式会社 固体撮像装置
JP5124368B2 (ja) 2008-07-03 2013-01-23 富士フイルム株式会社 撮像装置及び固体撮像素子の駆動方法
JP4957925B2 (ja) * 2009-01-30 2012-06-20 株式会社ブルックマンテクノロジ 増幅型固体撮像装置
JP5495711B2 (ja) * 2009-10-26 2014-05-21 キヤノン株式会社 撮像装置及び撮像システム、それらの制御方法及びそのプログラム
JP2011119950A (ja) * 2009-12-02 2011-06-16 Panasonic Corp 固体撮像装置および駆動方法
JP5751766B2 (ja) * 2010-07-07 2015-07-22 キヤノン株式会社 固体撮像装置および撮像システム
JP5665484B2 (ja) * 2010-10-29 2015-02-04 キヤノン株式会社 撮像装置、放射線撮影システム、イメージセンサの制御方法
JP5625833B2 (ja) * 2010-12-02 2014-11-19 株式会社島津製作所 放射線検出器および放射線撮影装置

Also Published As

Publication number Publication date
CN103716551B (zh) 2017-05-31
US20140097348A1 (en) 2014-04-10
CN103716551A (zh) 2014-04-09
JP2014096566A (ja) 2014-05-22
US9450002B2 (en) 2016-09-20

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