JP6254608B2 - 半導体ナノワイヤへの凹んだコンタクト - Google Patents
半導体ナノワイヤへの凹んだコンタクト Download PDFInfo
- Publication number
- JP6254608B2 JP6254608B2 JP2015548787A JP2015548787A JP6254608B2 JP 6254608 B2 JP6254608 B2 JP 6254608B2 JP 2015548787 A JP2015548787 A JP 2015548787A JP 2015548787 A JP2015548787 A JP 2015548787A JP 6254608 B2 JP6254608 B2 JP 6254608B2
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- Prior art keywords
- nanowire
- semiconductor nanowire
- semiconductor
- nanowires
- catalyst particles
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/205—Nanosized electrodes, e.g. nanowire electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
- H10D62/118—Nanostructure semiconductor bodies
- H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
- H10D62/118—Nanostructure semiconductor bodies
- H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
- H10D62/122—Nanowire, nanosheet or nanotube semiconductor bodies oriented at angles to substrates, e.g. perpendicular to substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/163—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
- H10F71/1276—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising growth substrates not made of Group III-V materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
- H10F77/1437—Quantum wires or nanorods
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/833—Transparent materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3451—Structure
- H10P14/3452—Microstructure
- H10P14/3462—Nanowires
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6328—Deposition from the gas or vapour phase
- H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
- H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
- H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
- H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
- H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/66—Wet etching of conductive or resistive materials
- H10P50/663—Wet etching of conductive or resistive materials by chemical means only
- H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Photovoltaic Devices (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/723,413 US9012883B2 (en) | 2012-12-21 | 2012-12-21 | Recessed contact to semiconductor nanowires |
| PCT/IB2013/003176 WO2014096962A2 (en) | 2012-12-21 | 2013-12-06 | Recessed contact to semiconductor nanowires |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016510943A JP2016510943A (ja) | 2016-04-11 |
| JP2016510943A5 JP2016510943A5 (https=) | 2017-01-19 |
| JP6254608B2 true JP6254608B2 (ja) | 2017-12-27 |
Family
ID=50973605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015548787A Expired - Fee Related JP6254608B2 (ja) | 2012-12-21 | 2013-12-06 | 半導体ナノワイヤへの凹んだコンタクト |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US9012883B2 (https=) |
| EP (1) | EP2936568B1 (https=) |
| JP (1) | JP6254608B2 (https=) |
| CN (1) | CN104995741B (https=) |
| WO (1) | WO2014096962A2 (https=) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9012883B2 (en) | 2012-12-21 | 2015-04-21 | Sol Voltaics Ab | Recessed contact to semiconductor nanowires |
| US20170352542A1 (en) * | 2014-10-30 | 2017-12-07 | President And Fellows Of Harvard College | Nanoscale wires with tip-localized junctions |
| WO2016071762A1 (en) * | 2014-11-07 | 2016-05-12 | Sol Voltaics Ab | Shell-enabled vertical alignment and precision-assembly of a close-packed colloidal crystal film |
| DE102015205230B4 (de) * | 2015-03-23 | 2023-01-19 | Universität Duisburg-Essen | Verfahren zur Herstellung von Bauelementen aufweisend eine Schottky-Diode mittels Drucktechnik und Bauelement |
| KR101787435B1 (ko) * | 2016-02-29 | 2017-10-19 | 피에스아이 주식회사 | 나노 로드 제조방법 |
| EP3260414A1 (en) | 2016-06-21 | 2017-12-27 | Sol Voltaics AB | Method for transferring nanowires from a fluid to a substrate surface |
| FR3064109B1 (fr) * | 2017-03-20 | 2025-03-14 | Commissariat Energie Atomique | Structure a nanofils et procede de realisation d'une telle structure |
| KR101919487B1 (ko) * | 2017-09-14 | 2018-11-19 | 한국과학기술연구원 | 반도체 기판을 텍스쳐링하는 방법과, 이 방법에 의해 제조된 반도체 기판, 그리고, 이러한 반도체 기판을 포함하는 태양 전지 |
| JP7371366B2 (ja) * | 2019-06-27 | 2023-10-31 | 富士通株式会社 | 半導体デバイス、及びこれを用いた無線受信器 |
| US11101744B2 (en) * | 2019-12-27 | 2021-08-24 | Michael Junior Spruill | Capacitive engine featuring an extrinsic semiconductor |
| CN111180554B (zh) * | 2020-01-08 | 2023-01-03 | 燕山大学 | 一种混合结构太阳能电池的制备方法 |
| CN115428166B (zh) | 2020-04-15 | 2026-04-14 | 富士通株式会社 | 半导体装置、储层计算系统以及半导体装置的制造方法 |
| US11094846B1 (en) * | 2020-08-31 | 2021-08-17 | 4233999 Canada Inc. | Monolithic nanocolumn structures |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3870459B2 (ja) * | 1996-10-28 | 2007-01-17 | ソニー株式会社 | 量子細線の製造方法 |
| JP4235440B2 (ja) | 2002-12-13 | 2009-03-11 | キヤノン株式会社 | 半導体デバイスアレイ及びその製造方法 |
| US6933222B2 (en) * | 2003-01-02 | 2005-08-23 | Intel Corporation | Microcircuit fabrication and interconnection |
| US20060207647A1 (en) | 2005-03-16 | 2006-09-21 | General Electric Company | High efficiency inorganic nanorod-enhanced photovoltaic devices |
| US7230286B2 (en) * | 2005-05-23 | 2007-06-12 | International Business Machines Corporation | Vertical FET with nanowire channels and a silicided bottom contact |
| EP1804286A1 (en) | 2005-12-27 | 2007-07-04 | Interuniversitair Microelektronica Centrum | Elongate nanostructure semiconductor device |
| KR100721020B1 (ko) * | 2006-01-20 | 2007-05-23 | 삼성전자주식회사 | 콘택 구조체를 포함하는 반도체 소자 및 그 형성 방법 |
| DE102006013245A1 (de) * | 2006-03-22 | 2007-10-04 | Infineon Technologies Ag | Verfahren zur Ausbildung von Öffnungen in einer Matrizenschicht und zur Herstellung von Kondensatoren |
| KR101547711B1 (ko) * | 2007-06-19 | 2015-08-26 | 큐나노 에이비 | 나노와이어-기반 태양 전지 구조 |
| US20080315430A1 (en) * | 2007-06-22 | 2008-12-25 | Qimonda Ag | Nanowire vias |
| AU2008275956A1 (en) * | 2007-07-19 | 2009-01-22 | California Institute Of Technology | Structures of ordered arrays of semiconductors |
| EP2019313B1 (en) * | 2007-07-25 | 2015-09-16 | Stichting IMEC Nederland | Sensor device comprising elongated nanostructures, its use and manufacturing method |
| KR20100072220A (ko) * | 2007-08-28 | 2010-06-30 | 캘리포니아 인스티튜트 오브 테크놀로지 | 중합체―임베드된 반도체 로드 어레이 |
| KR20090058952A (ko) * | 2007-12-05 | 2009-06-10 | 삼성전자주식회사 | 나노로드를 이용한 발광소자 및 그 제조 방법 |
| CN102484147B (zh) * | 2009-04-15 | 2015-11-25 | 索尔伏打电流公司 | 具有纳米线的多结光生伏打电池 |
| US8698254B2 (en) * | 2009-09-30 | 2014-04-15 | National University Corporation Hokkaido University | Tunnel field effect transistor and method for manufacturing same |
| CN102770367B (zh) | 2009-12-22 | 2015-08-19 | 昆南诺股份有限公司 | 用于制备纳米线结构的方法 |
| JP2011187901A (ja) * | 2010-03-11 | 2011-09-22 | Canon Inc | 半導体デバイスの製造方法 |
| US7906354B1 (en) * | 2010-03-30 | 2011-03-15 | Eastman Kodak Company | Light emitting nanowire device |
| CN107090593A (zh) | 2010-05-11 | 2017-08-25 | 昆南诺股份有限公司 | 线的气相合成 |
| JP5940069B2 (ja) | 2010-09-14 | 2016-06-29 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | 発光するナノワイヤー系光電子デバイス |
| GB201015411D0 (en) | 2010-09-15 | 2010-10-27 | Univ Leuven Kath | Anti-cancer activity of novel bicyclic heterocycles |
| US10090425B2 (en) * | 2012-02-21 | 2018-10-02 | California Institute Of Technology | Axially-integrated epitaxially-grown tandem wire arrays |
| US9012883B2 (en) | 2012-12-21 | 2015-04-21 | Sol Voltaics Ab | Recessed contact to semiconductor nanowires |
-
2012
- 2012-12-21 US US13/723,413 patent/US9012883B2/en not_active Expired - Fee Related
-
2013
- 2013-12-06 JP JP2015548787A patent/JP6254608B2/ja not_active Expired - Fee Related
- 2013-12-06 CN CN201380073253.5A patent/CN104995741B/zh not_active Expired - Fee Related
- 2013-12-06 EP EP13865741.6A patent/EP2936568B1/en not_active Not-in-force
- 2013-12-06 WO PCT/IB2013/003176 patent/WO2014096962A2/en not_active Ceased
-
2015
- 2015-03-27 US US14/671,666 patent/US9419086B2/en active Active
-
2016
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| Publication number | Publication date |
|---|---|
| US20150200262A1 (en) | 2015-07-16 |
| JP2016510943A (ja) | 2016-04-11 |
| WO2014096962A2 (en) | 2014-06-26 |
| US9012883B2 (en) | 2015-04-21 |
| US20140175372A1 (en) | 2014-06-26 |
| US20160336411A1 (en) | 2016-11-17 |
| EP2936568A4 (en) | 2016-07-20 |
| US9818830B2 (en) | 2017-11-14 |
| US9419086B2 (en) | 2016-08-16 |
| CN104995741B (zh) | 2017-08-25 |
| EP2936568A2 (en) | 2015-10-28 |
| EP2936568B1 (en) | 2017-09-06 |
| WO2014096962A3 (en) | 2014-08-21 |
| CN104995741A (zh) | 2015-10-21 |
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