JP6238687B2 - マスクパターン作成方法、光学像の計算方法 - Google Patents

マスクパターン作成方法、光学像の計算方法 Download PDF

Info

Publication number
JP6238687B2
JP6238687B2 JP2013234253A JP2013234253A JP6238687B2 JP 6238687 B2 JP6238687 B2 JP 6238687B2 JP 2013234253 A JP2013234253 A JP 2013234253A JP 2013234253 A JP2013234253 A JP 2013234253A JP 6238687 B2 JP6238687 B2 JP 6238687B2
Authority
JP
Japan
Prior art keywords
pattern
pupil
optical system
mask
projection optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013234253A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015094856A (ja
JP2015094856A5 (enExample
Inventor
山添　賢治
賢治 山添
諒 中山
諒 中山
弘之 石井
弘之 石井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2013234253A priority Critical patent/JP6238687B2/ja
Priority to US14/537,639 priority patent/US9678441B2/en
Publication of JP2015094856A publication Critical patent/JP2015094856A/ja
Publication of JP2015094856A5 publication Critical patent/JP2015094856A5/ja
Application granted granted Critical
Publication of JP6238687B2 publication Critical patent/JP6238687B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2013234253A 2013-11-12 2013-11-12 マスクパターン作成方法、光学像の計算方法 Active JP6238687B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013234253A JP6238687B2 (ja) 2013-11-12 2013-11-12 マスクパターン作成方法、光学像の計算方法
US14/537,639 US9678441B2 (en) 2013-11-12 2014-11-10 Mask pattern generation method and optical image calculation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013234253A JP6238687B2 (ja) 2013-11-12 2013-11-12 マスクパターン作成方法、光学像の計算方法

Publications (3)

Publication Number Publication Date
JP2015094856A JP2015094856A (ja) 2015-05-18
JP2015094856A5 JP2015094856A5 (enExample) 2016-12-28
JP6238687B2 true JP6238687B2 (ja) 2017-11-29

Family

ID=53043557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013234253A Active JP6238687B2 (ja) 2013-11-12 2013-11-12 マスクパターン作成方法、光学像の計算方法

Country Status (2)

Country Link
US (1) US9678441B2 (enExample)
JP (1) JP6238687B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10133184B2 (en) * 2012-04-25 2018-11-20 Nikon Corporation Using customized lens pupil optimization to enhance lithographic imaging in a source-mask optimization scheme
KR102079181B1 (ko) * 2016-03-04 2020-02-19 주식회사 고영테크놀러지 패턴광 조사 장치 및 방법
CN107942614B (zh) * 2017-12-22 2020-12-25 上海集成电路研发中心有限公司 孔层辅助图案生成方法及校正函数生成方法
US20230206620A1 (en) * 2021-12-23 2023-06-29 Electronics And Telecommunications Resaerch Institute OPTICAL 4f SYSTEM PERFORMING EXTENDED CONVOLUTION OPERATION AND OPERATING METHOD THEREOF

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5707765A (en) * 1996-05-28 1998-01-13 Microunity Systems Engineering, Inc. Photolithography mask using serifs and method thereof
TW552561B (en) * 2000-09-12 2003-09-11 Asml Masktools Bv Method and apparatus for fast aerial image simulation
US6519760B2 (en) * 2001-02-28 2003-02-11 Asml Masktools, B.V. Method and apparatus for minimizing optical proximity effects
SG139530A1 (en) 2003-01-14 2008-02-29 Asml Masktools Bv Method of optical proximity correction design for contact hole mask
JP4061289B2 (ja) * 2004-04-27 2008-03-12 独立行政法人科学技術振興機構 画像検査方法及び装置
DE102004030961B4 (de) * 2004-06-26 2008-12-11 Infineon Technologies Ag Verfahren zum Bestimmen einer Matrix von Transmissionskreuzkoeffizienten bei einer optischen Näherungskorrektur von Maskenlayouts
JP5235322B2 (ja) * 2006-07-12 2013-07-10 キヤノン株式会社 原版データ作成方法及び原版データ作成プログラム
US7617475B2 (en) * 2006-11-13 2009-11-10 United Microelectronics Corp. Method of manufacturing photomask and method of repairing optical proximity correction
JP2008153447A (ja) * 2006-12-18 2008-07-03 Nec Electronics Corp シミュレーション方法およびシミュレーションシステム、ならびにマスクパターンの修正方法
JP4484909B2 (ja) * 2007-07-24 2010-06-16 キヤノン株式会社 原版データ作成方法、原版作成方法、露光方法および原版データ作成プログラム
JP4402145B2 (ja) * 2007-10-03 2010-01-20 キヤノン株式会社 算出方法、生成方法、プログラム、露光方法及び原版作成方法
JP5607308B2 (ja) * 2009-01-09 2014-10-15 キヤノン株式会社 原版データ生成プログラムおよび方法
JP5185235B2 (ja) * 2009-09-18 2013-04-17 株式会社東芝 フォトマスクの設計方法およびフォトマスクの設計プログラム
JP6598421B2 (ja) * 2013-02-22 2019-10-30 キヤノン株式会社 マスクパターンの決定方法、プログラム、情報処理装置
US8875066B2 (en) * 2013-03-15 2014-10-28 Synopsys, Inc. Performing image calculation based on spatial coherence
JP6192372B2 (ja) * 2013-06-11 2017-09-06 キヤノン株式会社 マスクパターンの作成方法、プログラムおよび情報処理装置
JP6324044B2 (ja) * 2013-12-03 2018-05-16 キヤノン株式会社 セルのパターンの作成方法、マスクパターンの作成方法、プログラム、情報処理装置、マスク製造方法
JP6415154B2 (ja) * 2014-07-22 2018-10-31 キヤノン株式会社 パターンの作成方法、プログラムおよび情報処理装置

Also Published As

Publication number Publication date
US9678441B2 (en) 2017-06-13
US20150131066A1 (en) 2015-05-14
JP2015094856A (ja) 2015-05-18

Similar Documents

Publication Publication Date Title
JP4402145B2 (ja) 算出方法、生成方法、プログラム、露光方法及び原版作成方法
JP4484909B2 (ja) 原版データ作成方法、原版作成方法、露光方法および原版データ作成プログラム
JP5235322B2 (ja) 原版データ作成方法及び原版データ作成プログラム
JP5086926B2 (ja) 算出方法、プログラム及び露光方法
US9869939B2 (en) Lithography process
JP5188644B2 (ja) 原版データの生成方法、原版作成方法、原版データを作成するためのプログラム及び処理装置
JP6238687B2 (ja) マスクパターン作成方法、光学像の計算方法
JP5607348B2 (ja) 原版データを生成する方法およびプログラム、ならびに、原版製作方法
JP5607308B2 (ja) 原版データ生成プログラムおよび方法
JP4804294B2 (ja) 原版データ作成プログラム、原版データ作成方法、原版作成方法、露光方法及びデバイスの製造方法
JP2010165856A (ja) 決定方法、露光方法、デバイスの製造方法及びプログラム
JP5603685B2 (ja) 生成方法、作成方法、露光方法、デバイスの製造方法及びプログラム
JP5607327B2 (ja) 決定方法、露光方法、デバイスの製造方法及びプログラム
JP4921536B2 (ja) プログラム及び算出方法
JP2010156849A (ja) 生成方法、原版の作成方法、露光方法、デバイスの製造方法及びプログラム

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161111

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20161111

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170830

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20171003

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20171031

R151 Written notification of patent or utility model registration

Ref document number: 6238687

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151