JP6235998B2 - 発光ダイオードアセンブリ - Google Patents
発光ダイオードアセンブリ Download PDFInfo
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- JP6235998B2 JP6235998B2 JP2014513427A JP2014513427A JP6235998B2 JP 6235998 B2 JP6235998 B2 JP 6235998B2 JP 2014513427 A JP2014513427 A JP 2014513427A JP 2014513427 A JP2014513427 A JP 2014513427A JP 6235998 B2 JP6235998 B2 JP 6235998B2
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- 230000017525 heat dissipation Effects 0.000 claims description 56
- 239000002893 slag Substances 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 41
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 43
- 238000000465 moulding Methods 0.000 description 37
- 230000005855 radiation Effects 0.000 description 15
- 239000011247 coating layer Substances 0.000 description 13
- 239000010410 layer Substances 0.000 description 13
- 241000237858 Gastropoda Species 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Engineering & Computer Science (AREA)
- Led Device Packages (AREA)
Description
Claims (13)
- 赤色発光ダイオードチップと、
前記赤色発光ダイオードチップから放出される光に比べて相対的に短波長の光を放出する短波長発光ダイオードチップと、
前記短波長発光ダイオードチップで生成された熱を主に放出する第1の放熱部材と、
前記赤色発光ダイオードチップで生成された熱を主に放出する第2の放熱部材と、
ベース基板と、を含み、
前記第2の放熱部材の熱放出性能が前記第1の放熱部材に比べて相対的に良く、
前記第1の放熱部材は、前記ベース基板上に位置する第1のランディングパッドを含み、
前記第2の放熱部材は、前記ベース基板上に位置する第2のランディングパッドを含み、
前記短波長発光ダイオードチップは、前記第1のランディングパッドに熱的に結合され、
前記赤色発光ダイオードチップは、前記第2のランディングパッドに熱的に結合され、
前記第1の放熱部材は、前記ベース基板の下部に位置する第1の外部パッド、及び前記第1のランディングパッドと前記第1の外部パッドとを接続する第1のビアを含み、
前記第2の放熱部材は、前記ベース基板の下部に位置する第2の外部パッド、及び前記第2のランディングパッドと前記第2の外部パッドとを接続する第2のビアを含み、
前記第2のビアの個数が前記第1のビアの個数より多い発光ダイオードアセンブリであって、
前記第2のランディングパッドは前記ベース基板の縁部に沿って配置され、前記第2のランディングパッドが沿う前記ベース基板の縁部の数は前記第1のランディングパッドが沿う前記ベース基板の縁部の数よりも多く、
かつ、前記第2のランディングパッドは、前記第1のランディングパッドの3面を取り囲むように配置されていることを特徴する発光ダイオードアセンブリ。 - 前記第2のランディングパッドが前記第1のランディングパッドより広い、請求項1に記載の発光ダイオードアセンブリ。
- 前記第2の外部パッドが前記第1の外部パッドより広い、請求項1に記載の発光ダイオードアセンブリ。
- 前記第2のビアの体積が前記第1のビアの体積より大きい、請求項1に記載の発光ダイオードアセンブリ。
- 前記第2の外部パッドの表面積が前記第1の外部パッドの表面積より広い、請求項1に記載の発光ダイオードアセンブリ。
- 本体と、
前記本体のキャビティの底に配置される第1の内部リード及び第2の内部リードと、
前記第1の内部リードから延長されて前記本体の外部に露出した第1の外部リードと、
前記第2の内部リードから延長されて前記本体の外部に露出した第2の外部リードと、
前記第2の内部リードに接続され、尚且つ熱的に結合される赤色発光ダイオードチップと、
前記第1の内部リードに接続され、尚且つ熱的に結合される前記赤色発光ダイオードチップから放出される光に比べて相対的に短波長の光を放出する短波長発光ダイオードチップと、を含む発光ダイオードアセンブリであって、
前記第2の内部リードは前記キャビティの底において前記第1の内部リードに比べて広い面積を占有し、
かつ、前記第2の内部リードは、前記第1の内部リードの3面を取り囲むように配置されていることを特徴する発光ダイオードアセンブリ。 - 本体と、
前記本体のキャビティの底に配置される第1の内部リード及び第2の内部リードと、
前記第1の内部リードから延長されて前記本体の外部に露出した第1の外部リードと、
前記第2の内部リードから延長されて前記本体の外部に露出した第2の外部リードと、
前記第2の内部リードに接続され、尚且つ熱的に結合される赤色発光ダイオードチップと、
前記第1の内部リードに接続され、尚且つ熱的に結合される前記赤色発光ダイオードチップから放出される光に比べて相対的に短波長の光を放出する短波長発光ダイオードチップと、を含む発光ダイオードアセンブリであって、
前記第2の内部リードは前記第1の内部リードの3面を取り囲むように配置されていることを特徴とする発光ダイオードアセンブリ。 - 本体と、
前記本体のキャビティの底に配置される第1の内部リード及び第2の内部リードと、
前記第1の内部リードから延長されて前記本体の外部に露出した第1の外部リードと、
前記第2の内部リードから延長されて前記本体の外部に露出した第2の外部リードと、
前記第2の内部リードに接続され、尚且つ熱的に結合される赤色発光ダイオードチップと、
前記第1の内部リードに接続され、尚且つ熱的に結合される前記赤色発光ダイオードチップから放出される光に比べて相対的に短波長の光を放出する短波長発光ダイオードチップと、を含む発光ダイオードアセンブリであって、
前記第2の外部リードは前記第1の外部リードに比べて広く形成され、
かつ、前記第2の内部リードは、前記第1の内部リードの3面を取り囲むように配置されていることを特徴する発光ダイオードアセンブリ。 - 赤色発光ダイオードチップと、
前記赤色発光ダイオードチップから放出される光に比べて相対的に短波長の光を放出する短波長発光ダイオードチップと、
前記短波長発光ダイオードチップで生成された熱を主に放出する第1の放熱部材と、
前記赤色発光ダイオードチップで生成された熱を主に放出する第2の放熱部材と、
ベース基板と、を含み、
前記第1の放熱部材は第1の放熱スラグを含み、
前記第2の放熱部材は第2の放熱スラグを含み、
前記短波長発光ダイオードチップは、前記第1の放熱スラグに熱的に結合され、
前記赤色発光ダイオードチップは、前記第2の放熱スラグに熱的に結合され、
前記第2の放熱スラグの熱放出性能が前記第1の放熱スラグに比べて相対的に良く、
前記第2の放熱スラグは前記第1の放熱スラグを取り囲むことを特徴する発光ダイオードアセンブリ。 - 前記第2の放熱スラグは前記第1の放熱スラグより大きい体積を有する、請求項9に記載の発光ダイオードアセンブリ。
- 前記第1の放熱部材と前記第2の放熱部材は互いに離隔した、請求項1に記載の発光ダイオードアセンブリ。
- 前記短波長発光ダイオードチップから放出された光を波長変換させる波長変換器をさらに含み、
白色光を具現する、請求項1に記載の発光ダイオードアセンブリ。 - 前記短波長発光ダイオードチップは、青色又は紫外線を放出する発光ダイオードチップである、請求項1に記載の発光ダイオードアセンブリ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110052970A KR101752447B1 (ko) | 2011-06-01 | 2011-06-01 | 발광 다이오드 어셈블리 |
KR10-2011-0052970 | 2011-06-01 | ||
PCT/KR2012/004180 WO2012165819A2 (ko) | 2011-06-01 | 2012-05-25 | 발광 다이오드 어셈블리 |
Publications (2)
Publication Number | Publication Date |
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JP2014517528A JP2014517528A (ja) | 2014-07-17 |
JP6235998B2 true JP6235998B2 (ja) | 2017-11-22 |
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JP2014513427A Active JP6235998B2 (ja) | 2011-06-01 | 2012-05-25 | 発光ダイオードアセンブリ |
Country Status (4)
Country | Link |
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US (1) | US9203007B2 (ja) |
JP (1) | JP6235998B2 (ja) |
KR (1) | KR101752447B1 (ja) |
WO (1) | WO2012165819A2 (ja) |
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JP5963001B2 (ja) * | 2013-03-28 | 2016-08-03 | 東芝ライテック株式会社 | 照明装置 |
TWI556478B (zh) * | 2014-06-30 | 2016-11-01 | 億光電子工業股份有限公司 | 發光二極體裝置 |
US10203096B2 (en) * | 2017-06-28 | 2019-02-12 | Conservation Technology of Illinois LLC | Powering and fastening a light emitting diode or chip-on-board component to a heatsink |
CN107331658B (zh) * | 2017-07-27 | 2018-09-25 | 旭宇光电(深圳)股份有限公司 | 多腔体植物照明led封装结构 |
US10615321B2 (en) | 2017-08-21 | 2020-04-07 | Seoul Semiconductor Co., Ltd. | Light emitting device package |
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JP4645071B2 (ja) * | 2003-06-20 | 2011-03-09 | 日亜化学工業株式会社 | パッケージ成型体およびそれを用いた半導体装置 |
JP2005191135A (ja) * | 2003-12-24 | 2005-07-14 | Kawaguchiko Seimitsu Co Ltd | 半導体パッケージ |
JP2006108517A (ja) * | 2004-10-08 | 2006-04-20 | Citizen Watch Co Ltd | Led接続用基板及びそれを用いた照明装置及びそれを用いた表示装置 |
JP2006128512A (ja) * | 2004-10-29 | 2006-05-18 | Ngk Spark Plug Co Ltd | 発光素子用セラミック基板 |
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JP5010203B2 (ja) * | 2006-07-31 | 2012-08-29 | パナソニック株式会社 | 発光装置 |
JP4689637B2 (ja) * | 2007-03-23 | 2011-05-25 | シャープ株式会社 | 半導体発光装置 |
JP5431688B2 (ja) * | 2007-06-29 | 2014-03-05 | ソウル セミコンダクター カンパニー リミテッド | マルチledパッケージ |
KR100877877B1 (ko) * | 2007-08-28 | 2009-01-13 | 엘지이노텍 주식회사 | 발광 소자 |
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CN101463986B (zh) * | 2007-12-21 | 2011-01-05 | 富士迈半导体精密工业(上海)有限公司 | 发光二极管灯具 |
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KR100982994B1 (ko) | 2008-10-15 | 2010-09-17 | 삼성엘이디 주식회사 | Led 패키지 모듈 |
JP4544361B2 (ja) * | 2008-11-26 | 2010-09-15 | 日亜化学工業株式会社 | 発光装置 |
JP2010212508A (ja) * | 2009-03-11 | 2010-09-24 | Sony Corp | 発光素子実装用パッケージ、発光装置、バックライトおよび液晶表示装置 |
EP2462797B1 (en) * | 2009-08-07 | 2019-02-27 | Showa Denko K.K. | Multicolor LED lamp for use in plant cultivation, illumination appratus and plant cultivation method |
US9039216B2 (en) * | 2010-04-01 | 2015-05-26 | Lg Innotek Co., Ltd. | Light emitting device package and light unit having the same |
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2012
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WO2012165819A3 (ko) | 2013-03-28 |
WO2012165819A2 (ko) | 2012-12-06 |
KR101752447B1 (ko) | 2017-07-05 |
KR20120134202A (ko) | 2012-12-12 |
US9203007B2 (en) | 2015-12-01 |
JP2014517528A (ja) | 2014-07-17 |
US20150034979A1 (en) | 2015-02-05 |
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