JP6231277B2 - 封止用エポキシ樹脂組成物及び電子部品装置 - Google Patents
封止用エポキシ樹脂組成物及び電子部品装置 Download PDFInfo
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Description
本願は、2011年1月28日に日本に出願された特願2011−016384号に基づき優先権を主張し、その内容をここに援用する。
前記(D)硬化促進剤が、平均粒径が10μm以下であり、かつ粒径20μmを超える粒子の割合が1質量%以下であり、
前記(D)硬化促進剤が、
下記一般式(1):
で表される化合物、
下記一般式(2):
で表される化合物及び
下記一般式(3):
で表される化合物からなる群から選ばれる少なくとも1種の硬化促進剤を含むとともに、
当該封止用エポキシ樹脂組成物中における配合割合が、前記(A)エポキシ樹脂が1質量%以上15質量%以下であり、前記(B)フェノール樹脂系硬化剤が0.5質量%以上12質量%以下であり、前記(C)無機充填材が80質量%以上96質量%以下であり、前記(D)硬化促進剤が0.1質量%以上1質量%以下であることを特徴とする。
<測定実験>
大気下で220℃、120秒、加熱処理することにより、表面の酸化を進行させた酸化銅基材とタブレット化した前記エポキシ樹脂組成物を175℃、6.9MPa、2分の条件で一体成形して、酸化銅基材(直径3.6mm、厚さ0.5mm)上に円錐台状の成形品(上径3mm×下径3.6mm×厚さ3mm、酸化銅基材と樹脂硬化物の接触面積10mm2)を得た後、前記エポキシ樹脂組成物の硬化部位を横方向から押し、そのトルク(N)を測定する。
尚、各硬化促進剤の平均粒径、最大粒径及び粒径20μmを超える粒子の割合は、レーザー式粒度分布計((株)島津製作所製、SALD−7000)により測定した。
硬化促進剤(D−1A):硬化促進剤(D−1B)を、空気圧0.6MPa、原料供給速度3kg/hの条件でジェットミル(日本ニューマチック(株)製、PJM200SP)を用いて微粉砕することによって得た。得られた硬化促進剤(D−1A)は、平均粒径が3μm、最大粒径が24μm、粒径20μmを超える粒子の割合が0.5質量%であった。
硬化促進剤(D−2A):硬化促進剤(D−2B)を、空気圧0.6MPa、原料供給速度3kg/hの条件でジェットミル(日本ニューマチック(株)製、PJM200SP)を用いて微粉砕することによって得た。得られた硬化促進剤(D−2A)は、平均粒径が4μm、最大粒径が24μm、粒径20μmを超える粒子の割合が0.8質量%であった。
硬化促進剤(D−3A):硬化促進剤(D−3B)を、回転数60rpm、粉砕時間60分の条件でポットミル((株)森田鉄工製、ポットミルII型)を用いて微粉砕することによって得た。得られた硬化促進剤(D−3A)は、平均粒径が8μm、最大粒径が27μm、粒径20μmを超える粒子の割合が0.6質量%であった。
硬化促進剤(D−4A):硬化促進剤(D−4B)を、空気圧0.6MPa、原料供給速度3kg/hの条件でジェットミル(日本ニューマチック(株)製、PJM200SP)を用いて微粉砕することによって得た。得られた硬化促進剤(D−4A)は、平均粒径が5μm、最大粒径が24μm、粒径20μmを超える粒子の割合が0.7質量%であった。
硬化促進剤(D−5A):硬化促進剤(D−5B)を、空気圧0.6MPa、原料供給速度3kg/hの条件でジェットミル(日本ニューマチック(株)製、PJM200SP)を用いて微粉砕することによって得た。得られた硬化促進剤(D−5A)は、平均粒径が3μm、最大粒径が24μm、粒径20μmを超える粒子の割合が0.4質量%であった。
エポキシ樹脂(A−1):三菱化学(株)製、YX−4000(エポキシ当量190g/eq、融点105℃) 44質量部
フェノール樹脂(B−1):三井化学(株)製、XL−225(水酸基当量165g/eq、軟化点75℃) 38質量部
溶融球状シリカ(平均粒径24μm) 900質量部
硬化促進剤(D−1A) 5質量部
シランカップリング剤:γ−グリシドキシプロピルトリメトキシシラン(信越化学工業(株)製、KBM−403) 5質量部
カーボンブラック(三菱化学(株)製、♯5) 3質量部
カルナバワックス(日興ファイン(株)製、ニッコウカルナバ) 5質量部
をミキサーで混合し、熱ロールを用いて、95℃で8分間混練して冷却後粉砕し、エポキシ樹脂組成物を得た。得られたエポキシ樹脂組成物を、以下の方法で評価した。結果を表1に示す。
スパイラルフロー:低圧トランスファー成形機(コータキ精機(株)製、KTS−15)を用いて、ANSI/ASTM D 3123−72に準じたスパイラルフロー測定用の金型に、金型温度175℃、注入圧力6.9MPa、硬化時間120秒の条件でエポキシ樹脂組成物を注入し、流動長を測定した。スパイラルフローは、流動性のパラメータであり、数値が大きい方が流動性が良好である。単位はcm。
A:400ショットまで問題なし
B:300ショットまでにエアベントブロック発生
C:200ショットまでにエアベントブロック発生
D:100ショットまでにエアベントブロック発生
実施例2〜6及び比較例1〜8について、表1の配合に従い、実施例1と同様にして、エポキシ樹脂組成物を調製し評価した。結果を表1に示す。
2 ダイアタッチ材
3 支持部材(ダイパッド)
4 ボンディングワイヤ
5 リード
6 封止樹脂(エポキシ樹脂組成物)
8 電極パッド
9 インナーリード
Claims (9)
- (A)エポキシ樹脂、(B)フェノール樹脂系硬化剤、(C)無機充填材、(D)硬化促進剤、離型剤及びシランカップリング剤を配合してなる封止用エポキシ樹脂組成物であって、
前記(D)硬化促進剤が、平均粒径が10μm以下であり、かつ粒径20μmを超える粒子の割合が1質量%以下であり、
前記(D)硬化促進剤が、
下記一般式(1):
で表される化合物、
下記一般式(2):
で表される化合物及び
下記一般式(3):
で表される化合物からなる群から選ばれる少なくとも1種の硬化促進剤を含むとともに、
当該封止用エポキシ樹脂組成物中における配合割合が、前記(A)エポキシ樹脂が1質量%以上15質量%以下であり、前記(B)フェノール樹脂系硬化剤が0.5質量%以上12質量%以下であり、前記(C)無機充填材が80質量%以上96質量%以下であり、前記(D)硬化促進剤が0.1質量%以上1質量%以下であることを特徴とする封止用エポキシ樹脂組成物。 - 下記の測定実験における酸化銅との接着強度が14N以上である、請求項1記載の封止用エポキシ樹脂組成物。
<測定実験>
大気下で220℃、120秒、加熱処理することにより、表面の酸化を進行させた酸化銅基材とタブレット化した前記エポキシ樹脂組成物を175℃、6.9MPa、2分の条件で一体成形して、酸化銅基材(直径3.6mm、厚さ0.5mm)上に円錐台状の成形品(上径3mm×下径3.6mm×厚さ3mm、酸化銅基材と樹脂硬化物の接触面積10mm2)を得た後、前記エポキシ樹脂組成物の硬化部位を横方向から押し、そのトルク(N)を測定する。 - 前記封止用エポキシ樹脂組成物が銅表面または酸化銅表面に適用するためのものである請求項1または2に記載の封止用エポキシ樹脂組成物。
- 前記(C)無機充填材が、平均粒径10〜30μmの溶融球状シリカを含むことを特徴とする請求項1ないし3のいずれか1項に記載の封止用エポキシ樹脂組成物。
- 前記(C)無機充填材が、全樹脂組成物中に82質量%以上、92質量%以下の割合で含まれることを特徴とする請求項1ないし4のいずれか1項に記載の封止用エポキシ樹脂組成物。
- 前記(A)エポキシ樹脂が二官能の結晶性エポキシ樹脂を含むものである、請求項1ないし5のいずれか1項に記載の封止用エポキシ樹脂組成物。
- 請求項1から6のいずれか1項に記載の封止用エポキシ樹脂組成物の硬化物により電子部品が封止されていることを特徴とする電子部品装置。
- 前記電子部品が銅製リードフレームのダイパッド上に搭載され、前記電子部品の電極パッドと前記銅製リードフレームのインナーリードとがボンディングワイヤによって接続されていることを特徴とする請求項7記載の電子部品装置。
- 前記銅製リードフレームのダイパッド上に2以上の前記電子部品が積層して搭載されていることを特徴とする請求項8記載の電子部品装置。
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US20150357280A1 (en) * | 2014-06-06 | 2015-12-10 | Kabushiki Kaisha Toshiba | Memory card and method for manufacturing the same |
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KR101914967B1 (ko) * | 2014-11-26 | 2018-11-05 | 쿄세라 코포레이션 | 반도체 밀봉용 수지 조성물 및 반도체 장치 |
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