JP6230600B2 - 発光素子パッケージ - Google Patents
発光素子パッケージ Download PDFInfo
- Publication number
- JP6230600B2 JP6230600B2 JP2015515951A JP2015515951A JP6230600B2 JP 6230600 B2 JP6230600 B2 JP 6230600B2 JP 2015515951 A JP2015515951 A JP 2015515951A JP 2015515951 A JP2015515951 A JP 2015515951A JP 6230600 B2 JP6230600 B2 JP 6230600B2
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- Prior art keywords
- light emitting
- surface portion
- lead frame
- light
- emitting device
- Prior art date
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Images
Classifications
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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Description
Claims (15)
- キャビティを有するパッケージボディーと、
前記パッケージボディー内に配置される第1〜第4リードフレームと、
第1半導体層、活性層、及び第2半導体層を含み、互いに異なる波長の光を放出する第1発光チップ及び第2発光チップとを含み、
前記第1リードフレームは、前記第2リードフレームと前記第4リードフレームとの間に位置し、前記第3リードフレームは、前記第1リードフレームと前記第4リードフレームとの間に位置し、
前記第1リードフレームは、前記キャビティに露出する第1上面部、及び前記第1上面部の一側部から折れ曲がる第1側面部を含み、前記第2リードフレームは、前記キャビティに露出する第2上面部、及び前記第2上面部の一側部から折れ曲がる第2側面部を含み、前記第3リードフレームは、前記キャビティに露出する第3上面部、及び前記第3上面部の一側部から折れ曲がる第3側面部を含み、前記第4リードフレームは、前記キャビティに露出する第4上面部、及び前記第4上面部の一側部から折れ曲がる第4側面部を含み、
前記第1発光チップは前記第1上面部上に配置され、前記第2発光チップは前記第3上面部上に配置され、
前記第1〜第4リードフレームのうち少なくとも1つは、前記第1〜第4上面部と前記第1〜第4側面部との境界部分に貫通孔を有し、
前記第1〜第4側面部は、前記パッケージボディーの同一の一面に露出し、
前記第1側面部は、前記第1上面部と連結される第1上端部、及び前記第1上端部と連結され、前記第1上端部の下に位置する第1下端部を含み、前記第3側面部は、前記第3上面部と連結される第2上端部、及び前記第2上端部と連結され、前記第2上端部の下に位置する第2下端部を含み、
前記第1下端部の左側端は、前記第1上端部の左側面を基準として左側方向に突出し、前記第2下端部の右側端は、前記第2上端部の右側面を基準として右側方向に突出し、
前記第1上端部の水平方向への長さは、前記第2側面部の水平方向への長さよりも長く、
前記第1上面部の第1側面の長さと、前記第1側面と隣接し、対向する前記第2上面部の第2側面の長さとは互いに同一であり、前記第3上面部の第3側面の長さと、前記第3側面と隣接し、対向する前記第4上面部の第4側面の長さとは互いに同一であり、
前記第1上面部の第1側面には第1段差が設けられ、前記第2上面部の第2側面には第2段差が設けられ、
前記第1段差は、前記第1上面部と前記第1側面部とが会う部分と隣接して配置され、前記第2段差は、前記第2上面部と前記第2側面部とが会う部分と隣接して配置され、前記第1段差と前記第2段差は互いに対向するように位置する、発光素子パッケージ。 - 前記第3上面部の第3側面には第3段差が設けられ、前記第4上面部の第4側面には第4段差が設けられ、
前記第3段差は、前記第3上面部と前記第3側面部とが会う部分と隣接して配置され、前記第4段差は、前記第4上面部と前記第4側面部とが会う部分と隣接して配置され、前記第3段差と前記第4段差は互いに対向するように位置し、
前記第2上端部の水平方向への長さは、前記第4側面部の水平方向への長さよりも長い、請求項1に記載の発光素子パッケージ。 - 前記第1発光チップは、600nm〜690nmの波長範囲を有する赤色光を発生し、前記第2発光チップは、550nm〜600nmの波長範囲を有する琥珀色光を発生する、請求項1または2に記載の発光素子パッケージ。
- 前記第1〜第4リードフレームの側面部のそれぞれは、少なくとも一部が前記パッケージボディーの同一の面に露出する、請求項1ないし3のいずれか一項に記載の発光素子パッケージ。
- 前記第1リードフレームと前記第2リードフレームとの間、前記第1リードフレームと前記第3リードフレームとの間、及び前記第3リードフレームと前記第4リードフレームとの間には前記パッケージボディーの一部が位置する、請求項1ないし4のいずれか一項に記載の発光素子パッケージ。
- 前記第1上面部と前記第3上面部は互いに連結される、請求項1ないし5のいずれか一項に記載の発光素子パッケージ。
- 前記第1側面部と前記第3側面部は互いに連結される、請求項1ないし5のいずれか一項に記載の発光素子パッケージ。
- 前記第2上面部は、前記第1上面部の隣接する2つの側面の周囲を取り囲み、前記第4上面部は、前記第3上面部の隣接する2つの側面の周囲を取り囲む、請求項1ないし5のいずれか一項に記載の発光素子パッケージ。
- 前記第1〜第4上面部のそれぞれは、前記ボディーのキャビティの底と同一平面に位置する、請求項1ないし8のいずれか一項に記載の発光素子パッケージ。
- 前記第1発光チップと前記第2上面部とを電気的に接続する第1ワイヤと、
前記第2発光チップと前記第4上面部とを電気的に接続する第2ワイヤとをさらに含む、請求項1ないし9のいずれか一項に記載の発光素子パッケージ。 - 前記第2上面部上に配置される第1ツェナーダイオードと、
前記第4上面部上に配置される第2ツェナーダイオードと、
前記第1ツェナーダイオードと前記第1上面部とを電気的に接続する第3ワイヤと、
前記第2ツェナーダイオードと前記第3上面部とを電気的に接続する第4ワイヤとをさらに含む、請求項1ないし10のいずれか一項に記載の発光素子パッケージ。 - 前記第1上面部と前記第3上面部との間の離隔距離は、前記第1上面部と前記第2上面部との間の離隔距離、及び前記第3上面部と前記第4上面部との間の離隔距離よりも大きい、請求項1ないし11のいずれか一項に記載の発光素子パッケージ。
- 前記第1半導体層と前記第2半導体層は、AlGaInP、AlN、AlGaN、InAlGaN、AlInN、AlGaAs、AlInPのいずれか1つを含み、
前記第2発光チップのAl含有量は前記第1発光チップのAl含有量よりも大きい、請求項1ないし12のいずれか一項に記載の発光素子パッケージ。 - 前記第1発光チップのAl含有量は0.65〜0.75であり、前記第2発光チップのAl含有量は0.85〜0.95である、請求項13に記載の発光素子パッケージ。
- 前記第1上面部と前記第3上面部との間の離隔距離は、前記第1側面部と前記第3側面部との間の離隔距離と同一である、請求項1ないし5、及び8ないし14のいずれか一項に記載の発光素子パッケージ。
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JP6275399B2 (ja) * | 2012-06-18 | 2018-02-07 | エルジー イノテック カンパニー リミテッド | 照明装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4912532A (en) * | 1988-08-26 | 1990-03-27 | Hewlett-Packard Company | Electro-optical device with inverted transparent substrate and method for making same |
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JP2002314100A (ja) * | 2001-04-19 | 2002-10-25 | Yazaki Corp | 樹脂封止型半導体装置の製造方法 |
JP2006024794A (ja) * | 2004-07-08 | 2006-01-26 | Sanyo Electric Co Ltd | フルカラー発光ダイオード装置 |
JP4922555B2 (ja) | 2004-09-24 | 2012-04-25 | スタンレー電気株式会社 | Led装置 |
JP5119621B2 (ja) | 2006-04-21 | 2013-01-16 | 日亜化学工業株式会社 | 発光装置 |
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JP2009152268A (ja) | 2007-12-19 | 2009-07-09 | Sony Corp | 発光ダイオード、表示装置及び電子機器 |
JP5426091B2 (ja) * | 2007-12-27 | 2014-02-26 | 豊田合成株式会社 | 発光装置 |
US8507929B2 (en) * | 2008-06-16 | 2013-08-13 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting device including graded region |
JP2010034221A (ja) * | 2008-07-28 | 2010-02-12 | Sony Corp | 端面発光型半導体レーザおよびその製造方法 |
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US8368112B2 (en) | 2009-01-14 | 2013-02-05 | Cree Huizhou Opto Limited | Aligned multiple emitter package |
JP5678434B2 (ja) | 2010-02-12 | 2015-03-04 | 東芝ライテック株式会社 | 反射型led照明装置 |
JP5507330B2 (ja) | 2010-04-27 | 2014-05-28 | ローム株式会社 | Ledモジュール |
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