JP6224710B2 - 環境制御型semガス注入システム - Google Patents
環境制御型semガス注入システム Download PDFInfo
- Publication number
- JP6224710B2 JP6224710B2 JP2015525521A JP2015525521A JP6224710B2 JP 6224710 B2 JP6224710 B2 JP 6224710B2 JP 2015525521 A JP2015525521 A JP 2015525521A JP 2015525521 A JP2015525521 A JP 2015525521A JP 6224710 B2 JP6224710 B2 JP 6224710B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- workpiece
- gas concentration
- sample
- concentration structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
- H01J2237/0041—Neutralising arrangements
- H01J2237/0044—Neutralising arrangements of objects being observed or treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2444—Electron Multiplier
- H01J2237/24445—Electron Multiplier using avalanche in a gas
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261677226P | 2012-07-30 | 2012-07-30 | |
| US61/677,226 | 2012-07-30 | ||
| PCT/US2013/052777 WO2014022429A1 (en) | 2012-07-30 | 2013-07-30 | Environmental sem gas injection system |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015524987A JP2015524987A (ja) | 2015-08-27 |
| JP2015524987A5 JP2015524987A5 (enExample) | 2016-09-23 |
| JP6224710B2 true JP6224710B2 (ja) | 2017-11-01 |
Family
ID=50024551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015525521A Active JP6224710B2 (ja) | 2012-07-30 | 2013-07-30 | 環境制御型semガス注入システム |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9070533B2 (enExample) |
| EP (1) | EP2880675A4 (enExample) |
| JP (1) | JP6224710B2 (enExample) |
| CN (1) | CN104508791B (enExample) |
| WO (1) | WO2014022429A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9799490B2 (en) * | 2015-03-31 | 2017-10-24 | Fei Company | Charged particle beam processing using process gas and cooled surface |
| US9633816B2 (en) * | 2015-05-18 | 2017-04-25 | Fei Company | Electron beam microscope with improved imaging gas and method of use |
| DE102017201706B4 (de) * | 2017-02-02 | 2025-10-23 | Carl Zeiss Microscopy Gmbh | Teilchenstrahlgerät mit einer Abbildungseinrichtung zur Abbildung eines Objekts und zur Abbildung einer Baueinheit in dem Teilchenstrahlgerät sowie Verfahren zum Betrieb des Teilchenstrahlgeräts |
| WO2019000021A1 (en) * | 2017-06-26 | 2019-01-03 | Gerasimos Daniel Danilatos | MEANS FOR SAMPLE MANAGEMENT FOR PARTICLE BEAM MICROSCOPY |
| US20220305584A1 (en) * | 2021-03-24 | 2022-09-29 | Fei Company | In-situ laser redeposition reduction by a controlled gas flow and a system for reducing contamination |
| DE102022208597A1 (de) | 2022-08-18 | 2024-02-29 | Carl Zeiss Microscopy Gmbh | Vorrichtung zum Abbilden und Bearbeiten einer Probe mit einem fokussierten Teilchenstrahl |
| CN118712038B (zh) * | 2024-05-31 | 2025-09-23 | 国仪量子技术(合肥)股份有限公司 | 气体注入装置 |
Family Cites Families (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4785182A (en) | 1987-05-21 | 1988-11-15 | Electroscan Corporation | Secondary electron detector for use in a gaseous atmosphere |
| US5149974A (en) * | 1990-10-29 | 1992-09-22 | International Business Machines Corporation | Gas delivery for ion beam deposition and etching |
| JP3038901B2 (ja) * | 1990-11-26 | 2000-05-08 | 株式会社ニコン | 環境制御型走査電子顕微鏡 |
| JPH07262959A (ja) * | 1994-03-24 | 1995-10-13 | Nikon Corp | 走査型電子顕微鏡 |
| JP3310136B2 (ja) * | 1994-09-17 | 2002-07-29 | 株式会社東芝 | 荷電ビーム装置 |
| US5828064A (en) | 1995-08-11 | 1998-10-27 | Philips Electronics North America Corporation | Field emission environmental scanning electron microscope |
| US5851413A (en) | 1996-06-19 | 1998-12-22 | Micrion Corporation | Gas delivery systems for particle beam processing |
| GB9623768D0 (en) * | 1996-11-15 | 1997-01-08 | Leo Electron Microscopy Limite | Scanning electron microscope |
| EP0969493A1 (en) * | 1998-07-03 | 2000-01-05 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Apparatus and method for examining specimen with a charged particle beam |
| EP1047104A1 (en) * | 1999-04-19 | 2000-10-25 | Advantest Corporation | Apparatus for particle beam induced modification of a specimen |
| US6683320B2 (en) | 2000-05-18 | 2004-01-27 | Fei Company | Through-the-lens neutralization for charged particle beam system |
| DE10032607B4 (de) * | 2000-07-07 | 2004-08-12 | Leo Elektronenmikroskopie Gmbh | Teilchenstrahlgerät mit einer im Ultrahochvakuum zu betreibenden Teilchenquelle und kaskadenförmige Pumpanordnung für ein solches Teilchenstrahlgerät |
| DE50113837D1 (de) | 2000-07-07 | 2008-05-21 | Zeiss Carl Nts Gmbh | Detektor für variierende druckbereiche und elektronenmikroskop mit einem entsprechenden detektor |
| US6838380B2 (en) * | 2001-01-26 | 2005-01-04 | Fei Company | Fabrication of high resistivity structures using focused ion beams |
| WO2003012551A1 (en) | 2001-07-27 | 2003-02-13 | Fei Company | Electron beam processing |
| US20050103272A1 (en) * | 2002-02-25 | 2005-05-19 | Leo Elektronenmikroskopie Gmbh | Material processing system and method |
| EP1367630B1 (en) | 2002-05-31 | 2011-09-14 | Carl Zeiss SMT Limited | Improvements in or relating to particle detectors |
| CZ20022105A3 (cs) | 2002-06-17 | 2004-02-18 | Tescan, S. R. O. | Detektor sekundárních elektronů, zejména v rastrovacím elektronovém mikroskopu |
| US6979822B1 (en) * | 2002-09-18 | 2005-12-27 | Fei Company | Charged particle beam system |
| KR101015116B1 (ko) | 2002-09-18 | 2011-02-16 | 에프이아이 컴파니 | 하전(荷電) 입자 빔 시스템 |
| PL207199B1 (pl) | 2003-04-17 | 2010-11-30 | Politechnika Wroclawska | Układ detekcyjny elektronów wtórnych do skaningowego mikroskopu elektronowego |
| GB2411763B (en) | 2004-03-05 | 2009-02-18 | Thermo Electron Corp | Flood gun for charge neutralization |
| US7205237B2 (en) * | 2005-07-05 | 2007-04-17 | International Business Machines Corporation | Apparatus and method for selected site backside unlayering of si, GaAs, GaxAlyAszof SOI technologies for scanning probe microscopy and atomic force probing characterization |
| US7893397B2 (en) * | 2005-11-07 | 2011-02-22 | Fibics Incorporated | Apparatus and method for surface modification using charged particle beams |
| WO2007117397A2 (en) | 2006-03-31 | 2007-10-18 | Fei Company | Improved detector for charged particle beam instrument |
| JP5758577B2 (ja) | 2007-02-06 | 2015-08-05 | エフ・イ−・アイ・カンパニー | 高圧荷電粒子ビーム・システム |
| US8303833B2 (en) | 2007-06-21 | 2012-11-06 | Fei Company | High resolution plasma etch |
| EP2105944A1 (en) | 2008-03-28 | 2009-09-30 | FEI Company | Environmental cell for a particle-optical apparatus |
| US7791020B2 (en) | 2008-03-31 | 2010-09-07 | Fei Company | Multistage gas cascade amplifier |
| JP5179253B2 (ja) | 2008-05-16 | 2013-04-10 | 株式会社日立ハイテクノロジーズ | 電極ユニット、及び荷電粒子線装置 |
| US8013300B2 (en) | 2008-06-20 | 2011-09-06 | Carl Zeiss Nts, Llc | Sample decontamination |
| DE102008040426B4 (de) * | 2008-07-15 | 2015-12-24 | Carl Zeiss Microscopy Gmbh | Verfahren zur Untersuchung einer Oberfläche eines Objekts |
| US8207499B2 (en) * | 2008-09-24 | 2012-06-26 | Applied Materials Israel, Ltd. | Variable rate scanning in an electron microscope |
| US8299432B2 (en) | 2008-11-04 | 2012-10-30 | Fei Company | Scanning transmission electron microscope using gas amplification |
| JP2011034695A (ja) * | 2009-07-30 | 2011-02-17 | Hitachi High-Technologies Corp | 走査電子顕微鏡 |
| US8524139B2 (en) * | 2009-08-10 | 2013-09-03 | FEI Compay | Gas-assisted laser ablation |
| JP5564403B2 (ja) * | 2010-11-01 | 2014-07-30 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
| US9679741B2 (en) * | 2010-11-09 | 2017-06-13 | Fei Company | Environmental cell for charged particle beam system |
-
2013
- 2013-07-30 WO PCT/US2013/052777 patent/WO2014022429A1/en not_active Ceased
- 2013-07-30 EP EP13825971.8A patent/EP2880675A4/en not_active Withdrawn
- 2013-07-30 US US13/954,838 patent/US9070533B2/en active Active
- 2013-07-30 CN CN201380040374.XA patent/CN104508791B/zh active Active
- 2013-07-30 JP JP2015525521A patent/JP6224710B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2880675A4 (en) | 2016-03-30 |
| EP2880675A1 (en) | 2015-06-10 |
| JP2015524987A (ja) | 2015-08-27 |
| US20140034830A1 (en) | 2014-02-06 |
| CN104508791A (zh) | 2015-04-08 |
| WO2014022429A1 (en) | 2014-02-06 |
| US9070533B2 (en) | 2015-06-30 |
| CN104508791B (zh) | 2017-03-01 |
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