JP6224573B2 - ナノ結晶カーボン自立薄膜の製造方法 - Google Patents

ナノ結晶カーボン自立薄膜の製造方法 Download PDF

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Publication number
JP6224573B2
JP6224573B2 JP2014244984A JP2014244984A JP6224573B2 JP 6224573 B2 JP6224573 B2 JP 6224573B2 JP 2014244984 A JP2014244984 A JP 2014244984A JP 2014244984 A JP2014244984 A JP 2014244984A JP 6224573 B2 JP6224573 B2 JP 6224573B2
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thin film
free
film
standing
self
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JP2015107913A5 (enExample
JP2015107913A (ja
Inventor
ブイス バート
ブイス バート
ストヤノフ ダネフ ラドスティン
ストヤノフ ダネフ ラドスティン
ステファン サデル カシム
ステファン サデル カシム
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FEI Co
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FEI Co
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/20—Graphite
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/20—Graphite
    • C01B32/205—Preparation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/31—Electron-beam or ion-beam tubes for localised treatment of objects for cutting or drilling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/2614—Holography or phase contrast, phase related imaging in general, e.g. phase plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3114—Machining

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Physical Vapour Deposition (AREA)
JP2014244984A 2013-12-04 2014-12-03 ナノ結晶カーボン自立薄膜の製造方法 Active JP6224573B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP13195596.5 2013-12-04
EP13195596.5A EP2881970A1 (en) 2013-12-04 2013-12-04 Method of producing a freestanding thin film of nano-crystalline carbon

Publications (3)

Publication Number Publication Date
JP2015107913A JP2015107913A (ja) 2015-06-11
JP2015107913A5 JP2015107913A5 (enExample) 2017-03-02
JP6224573B2 true JP6224573B2 (ja) 2017-11-01

Family

ID=49752992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014244984A Active JP6224573B2 (ja) 2013-12-04 2014-12-03 ナノ結晶カーボン自立薄膜の製造方法

Country Status (4)

Country Link
US (1) US9908778B2 (enExample)
EP (2) EP2881970A1 (enExample)
JP (1) JP6224573B2 (enExample)
CN (1) CN104701122A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106104744B (zh) * 2014-01-21 2019-04-16 拉莫特特拉维夫大学有限公司 用于调节粒子波束的方法与装置
US11239003B2 (en) * 2016-04-21 2022-02-01 Kaneka Corporation Support substrate for radioisotope production, target plate for radioisotope production, and production method for support substrate
CN107481913B (zh) * 2016-06-08 2019-04-02 清华大学 一种电子束加工系统
TWI877210B (zh) * 2019-09-20 2025-03-21 德商麥克專利有限公司 顏料

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2344509C (en) * 1999-04-07 2008-03-25 Graftech Inc. Flexible graphite article and method of manufacture
JP2005015325A (ja) * 2003-05-30 2005-01-20 Japan Science & Technology Agency レーザーアブレーション法による極平坦微結晶ダイヤモンド薄膜の作製方法
EP2091062A1 (en) 2008-02-13 2009-08-19 FEI Company TEM with aberration corrector and phase plate
EP2131385A1 (en) 2008-06-05 2009-12-09 FEI Company Hybrid phase plate
US7977633B2 (en) 2008-08-27 2011-07-12 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E. V. Phase plate, in particular for an electron microscope
JPWO2010090343A1 (ja) * 2009-02-05 2012-08-09 帝人株式会社 黒鉛化炭素片分散液およびその製造方法
CN101964291B (zh) * 2009-07-24 2012-03-28 清华大学 透射电镜微栅及其制备方法
US20110200787A1 (en) * 2010-01-26 2011-08-18 The Regents Of The University Of California Suspended Thin Film Structures
KR101456905B1 (ko) * 2010-02-19 2014-10-31 가부시키가이샤 인큐베이션 얼라이언스 탄소 재료 및 그 제조 방법
TWI417934B (zh) * 2010-03-26 2013-12-01 Hon Hai Prec Ind Co Ltd 透射電鏡微柵的製備方法
WO2012094634A2 (en) * 2011-01-07 2012-07-12 Dune Sciences, Inc. Functionalized carbon membranes
EP2485239A1 (en) 2011-02-07 2012-08-08 FEI Company Method for centering an optical element in a TEM comprising a contrast enhancing element
DE102011014399B4 (de) * 2011-03-18 2017-08-03 Stiftung Caesar Center Of Advanced European Studies And Research Phasenplatte, Verfahren zum Herstellen einer Phasenplatte sowie Elektronenmikroskop
CN102737935B (zh) * 2011-04-14 2015-08-26 清华大学 透射电镜微栅
JP5812342B2 (ja) * 2011-12-12 2015-11-11 東海カーボン株式会社 グラファイトフィルムの製造方法
CN104321830B (zh) * 2011-12-22 2017-09-22 3M创新有限公司 具有高透光率的导电制品
EP2626885A1 (en) * 2012-02-13 2013-08-14 FEI Company Forming a vitrified sample for an electron microscopy
EP2667399A1 (en) * 2012-05-23 2013-11-27 FEI Company Improved phase plate for a TEM
EP2704178B1 (en) 2012-08-30 2014-08-20 Fei Company Imaging a sample in a TEM equipped with a phase plate
JP6286270B2 (ja) 2013-04-25 2018-02-28 エフ イー アイ カンパニＦｅｉ Ｃｏｍｐａｎｙ 透過型電子顕微鏡内で位相版を用いる方法
DE102013019297A1 (de) 2013-11-19 2015-05-21 Fei Company Phasenplatte für ein Transmissionselektronenmikroskop

Also Published As

Publication number Publication date
CN104701122A (zh) 2015-06-10
EP2881971B1 (en) 2017-01-04
EP2881971A1 (en) 2015-06-10
US9908778B2 (en) 2018-03-06
EP2881970A1 (en) 2015-06-10
US20160096734A2 (en) 2016-04-07
US20150151972A1 (en) 2015-06-04
JP2015107913A (ja) 2015-06-11

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