CN104701122A - 产生纳米结晶石墨的独立式薄膜方法 - Google Patents
产生纳米结晶石墨的独立式薄膜方法 Download PDFInfo
- Publication number
- CN104701122A CN104701122A CN201410726248.6A CN201410726248A CN104701122A CN 104701122 A CN104701122 A CN 104701122A CN 201410726248 A CN201410726248 A CN 201410726248A CN 104701122 A CN104701122 A CN 104701122A
- Authority
- CN
- China
- Prior art keywords
- film
- freestanding
- free
- films
- standing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000010409 thin film Substances 0.000 title claims abstract description 12
- 229910052799 carbon Inorganic materials 0.000 title abstract description 23
- 239000010408 film Substances 0.000 claims abstract description 100
- 229910003481 amorphous carbon Inorganic materials 0.000 claims abstract description 20
- 238000010438 heat treatment Methods 0.000 claims abstract description 18
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 16
- 239000010439 graphite Substances 0.000 claims abstract description 16
- 238000010894 electron beam technology Methods 0.000 claims abstract description 15
- 238000004627 transmission electron microscopy Methods 0.000 claims abstract description 15
- 238000001816 cooling Methods 0.000 claims abstract description 11
- 230000005540 biological transmission Effects 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 8
- 238000003384 imaging method Methods 0.000 abstract 1
- 239000011888 foil Substances 0.000 description 18
- 239000000523 sample Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 9
- 230000010363 phase shift Effects 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 5
- 239000011148 porous material Substances 0.000 description 5
- 239000010410 layer Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000001493 electron microscopy Methods 0.000 description 3
- 229920001817 Agar Polymers 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000008272 agar Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- YBJHBAHKTGYVGT-ZKWXMUAHSA-N (+)-Biotin Chemical compound N1C(=O)N[C@@H]2[C@H](CCCCC(=O)O)SC[C@@H]21 YBJHBAHKTGYVGT-ZKWXMUAHSA-N 0.000 description 1
- 241000894006 Bacteria Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000012472 biological sample Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000007709 nanocrystallization Methods 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000013169 thromboelastometry Methods 0.000 description 1
- FEPMHVLSLDOMQC-UHFFFAOYSA-N virginiamycin-S1 Natural products CC1OC(=O)C(C=2C=CC=CC=2)NC(=O)C2CC(=O)CCN2C(=O)C(CC=2C=CC=CC=2)N(C)C(=O)C2CCCN2C(=O)C(CC)NC(=O)C1NC(=O)C1=NC=CC=C1O FEPMHVLSLDOMQC-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/20—Graphite
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/20—Graphite
- C01B32/205—Preparation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical, image processing or photographic arrangements associated with the tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/31—Electron-beam or ion-beam tubes for localised treatment of objects for cutting or drilling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/2614—Holography or phase contrast, phase related imaging in general, e.g. phase plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
- H01J2237/3114—Machining
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Carbon And Carbon Compounds (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP13195596.5A EP2881970A1 (en) | 2013-12-04 | 2013-12-04 | Method of producing a freestanding thin film of nano-crystalline carbon |
| EP13195596.5 | 2013-12-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104701122A true CN104701122A (zh) | 2015-06-10 |
Family
ID=49752992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410726248.6A Pending CN104701122A (zh) | 2013-12-04 | 2014-12-04 | 产生纳米结晶石墨的独立式薄膜方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9908778B2 (enExample) |
| EP (2) | EP2881970A1 (enExample) |
| JP (1) | JP6224573B2 (enExample) |
| CN (1) | CN104701122A (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3097577A4 (en) * | 2014-01-21 | 2017-09-20 | Ramot at Tel-Aviv University Ltd. | Method and device for manipulating particle beam |
| US11239003B2 (en) * | 2016-04-21 | 2022-02-01 | Kaneka Corporation | Support substrate for radioisotope production, target plate for radioisotope production, and production method for support substrate |
| CN107481913B (zh) * | 2016-06-08 | 2019-04-02 | 清华大学 | 一种电子束加工系统 |
| US20210087403A1 (en) * | 2019-09-20 | 2021-03-25 | Merck Patent Gmbh | Pigments |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201133546A (en) * | 2010-03-26 | 2011-10-01 | Hon Hai Prec Ind Co Ltd | Method for making transmission electron microscope grid |
| US20120261588A1 (en) * | 2011-04-14 | 2012-10-18 | Hon Hai Precision Industry Co., Ltd. | Transmission electron microscope micro-grid |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2344509C (en) * | 1999-04-07 | 2008-03-25 | Graftech Inc. | Flexible graphite article and method of manufacture |
| JP2005015325A (ja) * | 2003-05-30 | 2005-01-20 | Japan Science & Technology Agency | レーザーアブレーション法による極平坦微結晶ダイヤモンド薄膜の作製方法 |
| EP2091062A1 (en) | 2008-02-13 | 2009-08-19 | FEI Company | TEM with aberration corrector and phase plate |
| EP2131385A1 (en) | 2008-06-05 | 2009-12-09 | FEI Company | Hybrid phase plate |
| US7977633B2 (en) | 2008-08-27 | 2011-07-12 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E. V. | Phase plate, in particular for an electron microscope |
| JPWO2010090343A1 (ja) * | 2009-02-05 | 2012-08-09 | 帝人株式会社 | 黒鉛化炭素片分散液およびその製造方法 |
| CN101964291B (zh) * | 2009-07-24 | 2012-03-28 | 清华大学 | 透射电镜微栅及其制备方法 |
| US20110200787A1 (en) * | 2010-01-26 | 2011-08-18 | The Regents Of The University Of California | Suspended Thin Film Structures |
| CN102791628B (zh) * | 2010-02-19 | 2016-05-25 | 创业发展联盟技术有限公司 | 碳材料及其制造方法 |
| US20130277573A1 (en) * | 2011-01-07 | 2013-10-24 | Dune Sciences, Inc. | Functionalized carbon membranes |
| EP2485239A1 (en) | 2011-02-07 | 2012-08-08 | FEI Company | Method for centering an optical element in a TEM comprising a contrast enhancing element |
| DE102011014399B4 (de) * | 2011-03-18 | 2017-08-03 | Stiftung Caesar Center Of Advanced European Studies And Research | Phasenplatte, Verfahren zum Herstellen einer Phasenplatte sowie Elektronenmikroskop |
| JP5812342B2 (ja) * | 2011-12-12 | 2015-11-11 | 東海カーボン株式会社 | グラファイトフィルムの製造方法 |
| US9668333B2 (en) * | 2011-12-22 | 2017-05-30 | 3M Innovative Properties Company | Electrically conductive article with high optical transmission |
| EP2626885A1 (en) * | 2012-02-13 | 2013-08-14 | FEI Company | Forming a vitrified sample for an electron microscopy |
| EP2667399A1 (en) * | 2012-05-23 | 2013-11-27 | FEI Company | Improved phase plate for a TEM |
| EP2704178B1 (en) | 2012-08-30 | 2014-08-20 | Fei Company | Imaging a sample in a TEM equipped with a phase plate |
| JP6286270B2 (ja) | 2013-04-25 | 2018-02-28 | エフ イー アイ カンパニFei Company | 透過型電子顕微鏡内で位相版を用いる方法 |
| DE102013019297A1 (de) | 2013-11-19 | 2015-05-21 | Fei Company | Phasenplatte für ein Transmissionselektronenmikroskop |
-
2013
- 2013-12-04 EP EP13195596.5A patent/EP2881970A1/en not_active Withdrawn
-
2014
- 2014-11-28 EP EP14195297.8A patent/EP2881971B1/en active Active
- 2014-12-03 JP JP2014244984A patent/JP6224573B2/ja active Active
- 2014-12-04 US US14/560,919 patent/US9908778B2/en active Active
- 2014-12-04 CN CN201410726248.6A patent/CN104701122A/zh active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201133546A (en) * | 2010-03-26 | 2011-10-01 | Hon Hai Prec Ind Co Ltd | Method for making transmission electron microscope grid |
| US20120261588A1 (en) * | 2011-04-14 | 2012-10-18 | Hon Hai Precision Industry Co., Ltd. | Transmission electron microscope micro-grid |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2881971B1 (en) | 2017-01-04 |
| EP2881970A1 (en) | 2015-06-10 |
| US20160096734A2 (en) | 2016-04-07 |
| JP6224573B2 (ja) | 2017-11-01 |
| EP2881971A1 (en) | 2015-06-10 |
| US9908778B2 (en) | 2018-03-06 |
| US20150151972A1 (en) | 2015-06-04 |
| JP2015107913A (ja) | 2015-06-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100606490B1 (ko) | 극소형 대상물의 고 분해능 X-ray 이미징 | |
| JP6262453B2 (ja) | 粒子光学装置での薄片の調製及び可視化方法 | |
| JP4189770B2 (ja) | X線用ターゲット及びそれを用いた装置 | |
| JP6286270B2 (ja) | 透過型電子顕微鏡内で位相版を用いる方法 | |
| Crawford et al. | High-resolution observations of an amorphous layer and subsurface damage formed by femtosecond laser irradiation of silicon | |
| Morishita et al. | Diffractive imaging of the dumbbell structure in silicon by spherical-aberration-corrected electron diffraction | |
| CN104701122A (zh) | 产生纳米结晶石墨的独立式薄膜方法 | |
| Egerton | An introduction to microscopy | |
| Bleuet et al. | Specifications for hard condensed matter specimens for three-dimensional high-resolution tomographies | |
| Merkel et al. | Laser irradiation effects in FeRh thin film | |
| JP6408072B2 (ja) | 二次元ナノ材料を特徴付ける方法 | |
| Wang et al. | Atomic-scale structure analysis by advanced transmission electron microscopy | |
| Dooley et al. | Energy filtered Lorentz microscopy | |
| JP7370042B2 (ja) | 透過電子顕微鏡試料支持体、その製造方法及びそれを用いたサンプル調整方法 | |
| JP6636061B2 (ja) | Tem内での特徴のない薄膜の位置合わせ | |
| Mills et al. | Tiny Bubbles: Combined HR (S) TEM and 4D-STEM Analysis of Sub-Nanometer He Bubbles in Au | |
| Wang et al. | Fabrication of nanoscale patterns in lithium fluoride crystal using a 13.5 nm Schwarzschild objective and a laser produced plasma source | |
| Zuo et al. | Atomic resolution electron imaging | |
| Sasaki et al. | Nondestructive observation of nanopipe in GaN crystal by x-ray ptychographic coherent diffraction imaging | |
| Peppernick et al. | Near-field focused photoemission from polystyrene microspheres studied with photoemission electron microscopy | |
| Lee et al. | Direct-write X-ray lithography using a hard X-ray Fresnel zone plate | |
| Schneider et al. | Novel X-ray microscopes for 3-D and fs-imaging at BESSY | |
| Sari et al. | Effect of nitrogen ion implantation in copper | |
| Awaji et al. | Large area imaging by Fourier transform holography using soft and hard X-rays | |
| Egerton | Special Topics |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150610 |