JP6212580B2 - Fragment material substrate cutting device - Google Patents

Description

The present invention is a brittle material substrate, in particular, the bonded substrate formed by bonding two brittle material substrates, for example, order to you cutting the bonded substrate formed by bonding two brittle material substrates made of different materials It is related with the apparatus used for.

  A bonded substrate formed by bonding two brittle material substrates with an adhesive (resin), particularly a bonded substrate formed by bonding two brittle material substrates made of different materials with an adhesive (bonding different materials) Substrate) is used as a substrate for various devices. For example, the other main surface of a semiconductor substrate such as a single crystal silicon substrate in which a pattern for a predetermined device (for example, a CMOS sensor) is formed on one main surface is bonded to a glass substrate as a support substrate and so on. In such a device, a single crystal silicon wafer as a mother substrate formed by repeatedly forming a circuit pattern two-dimensionally and a glass substrate are bonded together with an adhesive (resin), and then a strip or a lattice of a predetermined size. It is manufactured by dividing into individual pieces (chips) (see, for example, Patent Document 1).

  In addition, an apparatus (breaker) for cutting a brittle material substrate in which a scribe line has been formed on one main surface in advance by extending a crack from the scribe line by a three-point bending method is already known (for example, Patent Document 2).

JP 2010-40621 A JP 2014-83821 A

  As a method for dividing (separating) a bonded substrate in which a pattern is formed on one brittle material substrate (silicon substrate) (dissimilar material), the present inventors have provided a protective film on the surface on which the pattern is formed After affixed, a scribe line was formed on the other brittle material substrate (glass substrate) side, and an attempt was made to break along the scribe line with a breaker as disclosed in Patent Document 2.

  However, when a break is made by such a technique, the extension direction of the crack from the scribe line is shifted obliquely from the thickness direction of the substrate because an adhesive layer is interposed between the two brittle material substrates. There was a problem that it would end up. In addition, the amount of pressing from above by the upper blade of the breaker (the lowering distance of the upper blade from when the upper blade contacts the bonded substrate or the protective film until the break is completed) is large. There was also a problem that it was easy to occur. The occurrence of these defects is not preferable because it causes a reduction in chip yield such as chip quality degradation.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a method capable of suitably dividing a bonded substrate, particularly a dissimilar material bonded substrate.

In order to solve the above-mentioned problems, the brittle material substrate cutting device of the present invention is a device for cutting a brittle material substrate at a predetermined planned cutting position, and a scribe line is formed on the main surface side at the predetermined cutting position. And an elastic body having a smoothed surface for supporting the substrate, the holding surface of which is attached and the one main surface of which is directed downward, from above, and an upper portion provided above the elastic body. A cutting means for dividing the substrate is provided by lowering the blade tip while being brought into contact with the predetermined cutting position, and the smoothed elastic body is in contact with the holding tape when the substrate is divided. and wherein the der Rukoto thing that does not cause the gap to.

  ADVANTAGE OF THE INVENTION According to this invention, the bonding board | substrate containing a heterophase interface can be suitably parted with the pushing amount of the upper blade less than the conventional three-point bending method. In addition, it is possible to perform satisfactory division without causing a positional shift in the pieces obtained by the division. Moreover, it is suppressed suitably that the piece obtained by parting separates from the holding tape. This is particularly effective when the bonded substrate is sequentially cut at a plurality of scheduled cutting positions.

It is a schematic cross section which shows the structure of the bonding board | substrate 10 used as the object of the cutting method which concerns on embodiment of this invention. It is a schematic cross section which shows the bonding substrate 10 in which the scribe line S was formed. It is a schematic cross section which shows the break process by the 3 point | piece bending system of the bonding board | substrate 10 in which the scribe line S was formed. It is a figure which shows the mode of the division | segmentation of the bonding board | substrate 10 in this Embodiment. It is a figure which shows a mode when the piece obtained by parting will detach | leave from the holding tape. It is a figure which illustrates the elastic body 201 in which the measure for preventing the malfunction which a piece separates from a holding tape arises was given. It is a figure which shows the mode of the division | segmentation in the case of smoothing the contact surface 201s of the elastic body 201. FIG.

  FIG. 1 is a schematic cross-sectional view illustrating a configuration of a bonded substrate 10 (hereinafter simply referred to as a bonded substrate) made of different materials, which is an object of a cutting method according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view showing the bonded substrate 10 on which the scribe line S is formed. In this embodiment, a bonded substrate 10 formed by adhering a glass substrate 1 and a semiconductor substrate (for example, a silicon substrate) 2, which are both types of brittle material substrates, with an adhesive layer 3 made of an adhesive is divided. The target of.

  There are no particular restrictions on the thickness of the glass substrate 1 and the semiconductor substrate 2 and the planar size of the bonded substrate 10, and in view of easiness of handling and processing efficiency in the processes before and after the division and before and after, May be selected.

  Further, the material of the adhesive is not particularly limited as long as the adhesive strength between the glass substrate 1 and the semiconductor substrate 2 can be ensured, but can be suitably divided, but, for example, ultraviolet (UV) A cured resin or the like is preferably used. In addition, from the viewpoint of suitably realizing the dividing method according to the present embodiment, the thickness of the adhesive layer 3 is preferably about 5 μm to 200 μm, and usually about 5 μm to 50 μm.

  A pattern for a predetermined device (for example, a CMOS sensor or the like) may be formed on the non-bonded surface side of the semiconductor substrate 2.

  In order to divide the bonded substrate 10 having the above-described configuration, first, as shown in FIG. 2, a scribe line S is formed on the non-bonded surface of the glass substrate 1 along a predetermined slicing position A. To do. FIG. 2 shows a case where the planned cutting position A and the scribe line S extend in a direction perpendicular to the drawing. The scribe line S is such that cracks (microcracks) extending in the thickness direction of the glass substrate 1 are linearly continued on the non-bonded surface of the glass substrate 1.

  In FIG. 2, only one scheduled cutting position A and scribe line S are shown for simplicity of illustration, but the bonded substrate 10 is divided at a plurality of points, for example, in a strip shape or a lattice shape. In the case of obtaining a large number of pieces, scribe lines S are formed with respect to all the planned cutting positions A. Thereafter, although not specifically stated, in this case, the subsequent processing is also performed for all the scheduled division positions A.

  A known technique can be applied to the formation of the scribe line S. For example, a cutter wheel (scribing wheel) made of cemented carbide, sintered diamond, single crystal diamond, etc., having a disk shape and having a ridge line that functions as a blade on the outer peripheral portion, along the planned cutting position A A mode in which the scribe line S is formed by pressing and rolling, a mode in which the scribe line S is formed by drawing a diamond point along the planned cutting position A, or a laser The scribe line S may be formed by ablation by irradiation (for example, ultraviolet (UV) laser) or formation of a deteriorated layer, or thermal stress by heating and cooling by a laser (for example, infrared (IR) laser). Alternatively, the scribe line S may be formed.

  In the present embodiment, the division at the planned division position A is performed on the bonded substrate 10 provided with the scribe lines S in this way. Schematically speaking, by extending the crack CR (see FIG. 4) from the scribe line S in the thickness direction (more specifically, in the direction perpendicular to the main surface of the bonded substrate 10), the bonded substrate 10 is Divide.

  FIG. 3 is a view showing a state of division of the bonded substrate 10 by a conventional three-point bending method shown for comparison. In the conventional dividing method, first, as shown in FIG. 3A, an adhesive holding tape 5 is attached to the glass substrate 1 side of the bonded substrate 10. The holding tape 5 is used to hold the chips so that the chips (pieces) obtained by the division are not scattered. As the holding tape 5, for example, a so-called dicing tape used for the same purpose when dicing with a dicer can be suitably used. As shown in FIG. 3, a protective film 4 may be attached to the surface of the semiconductor substrate 2 as necessary. By sticking the protective film 4 on the surface of the semiconductor substrate 4, it is possible to prevent the substrate from being broken due to the contact between the substrate and the break blade.

  And in the aspect which positions the formation part of the scribe line S between the two lower blades 101A, 101B separated in the horizontal direction, in other words, between the two lower blades 101A, 101B arranged in parallel to each other. In the embodiment in which the scribe lines S are arranged parallel to each other, the bonded substrate 10 with the glass substrate 1 side facing downward is supported from below by the two lower blades 101A and 101B. Then, in such a support state, the upper blade 102 is lowered from above toward the formation position of the scribe line S (that is, the planned cutting position A) and is brought into contact with the bonded substrate 10 or through the protective film 4. Further, the upper blade 102 is lowered so as to be pushed in. The lower blades 101 </ b> A and 101 </ b> B are provided by members having sufficient rigidity as compared with the bonded substrate 10.

  When the upper blade 102 is pushed in such a manner, as shown in FIG. 3A, a force F1 directed downward is applied to the portion where the upper blade 102 of the protective film 4 is in contact, and the force As a reaction force against F1 (force F1 and force against compression by the weight of the bonded substrate 10), an upward force is exerted from the respective end portions 101a and 101b of the two lower blades 101A and 101B toward the bonded substrate 10. F2a and F2b are generated. As the crack CR extends, as shown in FIG. 3B, the left and right two portions of the bonded substrate board 10 are inclined with the end portions 101a and 101b as fulcrums. Along with this, a wedge-shaped gap G in a cross-sectional view gradually spreads from the portion where the scribe line S was formed. The extension of the crack CR is also maintained at the heterogeneous interface (the interface between the glass substrate 1 and the adhesive layer 3 and the interface between the adhesive layer 3 and the semiconductor substrate 2) existing inside the bonded substrate 10. As shown in FIG. 3C, the bonded substrate 10 is cut perpendicular to the main surface. Note that an angle (gap angle) formed by two divided sections generated by the division when the division is completed is α.

  In the conventional dividing method of the above-described aspect, the force F1 and the forces F2a and F2b are applied roughly so as to have opposite directions with the end portions 101a and 101b of the two lower blades 101A and 101B as fulcrums. It can be said that the division is advanced by generating a moment and causing the two left and right parts to be divided thereby to rotate in opposite directions. In such a method, a considerable amount of energy given to the bonded substrate 10 by the pressing of the upper blade 102 is consumed for rotation.

  FIG. 4 is a diagram showing a state of division of the bonded substrate 10 in the present embodiment. Even in the case where the bonded substrate 10 is divided in the present embodiment, first, the adhesive holding tape 5 is bonded to the glass substrate 1 side of the bonded substrate 10 as in the conventional method.

  Next, as illustrated in FIG. 4A, the bonded substrate 10 is brought into contact with the entire surface of the bonded substrate 10 in a posture in which the main surface side on which the holding tape 5 is bonded is directed downward. Is placed on the elastic body 201. In the present embodiment, the elastic body 201 refers to a material having a hardness of 65 ° to 95 °, preferably 70 ° to 90 °, for example, 80 °. As the elastic body 201, for example, silicone rubber or the like can be suitably used. In addition, as shown to Fig.4 (a), the elastic body 201 may be supported by support bodies 202, such as a table. When the scribe line is observed (recognized) from the elastic body 201 and the support body 202 side, the elastic body 201 and the support body 202 are preferably transparent.

  In the present embodiment, division is performed in such a mounted state. Specifically, in order to extend the crack CR from the scribe line S in the thickness direction, the upper substrate 102 is lowered from above toward the position where the scribe line S is formed (that is, the planned cutting position A), thereby the bonded substrate 10. Then, the upper blade 102 is lowered so as to be pushed in.

  When the upper blade 102 is pushed in such a manner, as shown in FIG. 4A, a downward force F1 is applied to the portion where the upper blade 102 of the protective film 4 is in contact. Then, as a reaction force against the force F1 (force F1 and force against compression due to the weight of the bonded substrate 10), a position immediately below the contact position of the upper blade 102 from the elastic body 201 toward the bonded substrate 10 is set. At the center, an upward elastic force F2 is generated, but immediately after that, the two left and right portions of the bonded substrate board 10 begin to tilt, and the crack CR extends from the scribe line S. As shown in FIG. The gap G having a visual wedge shape widens. Also in the cutting method according to the present embodiment, the extension of the crack CR is caused by the different phase interface (the interface between the glass substrate 1 and the adhesive layer 3, the interface between the adhesive layer 3 and the semiconductor substrate 2) existing inside the bonded substrate 10. ) Is also maintained. Therefore, finally, as shown in FIG. 4C, the bonded substrate 10 is divided perpendicularly to the main surface.

  More specifically, when the crack CR begins to extend and the gap G starts to be formed, the elastic forces F2a and F2b are applied to the contact surfaces of the two left and right portions of the bonded substrate 10 that are separated from each other. Works. Then, as in the conventional method, along with the extension of the crack CR, as shown in FIG. 4B, the wedge-shaped gap G in the sectional view gradually spreads from the portion where the scribe line S is formed.

  In this case, substantially, as shown in FIG. 4B, the elastic force concentration portions where the elastic forces F2a and F2b act intensively in the vicinity of the two left and right dividing sections forming the gap G, respectively. Since it becomes 201a, 201b, it can be said that the dividing method according to the present embodiment is also in accordance with the three-point bending method.

  However, in the case of the dividing method according to the present embodiment, unlike the above-described conventional dividing method, the elastic force concentration portions 201a and 201b are indicated by arrows AR1 and AR2 as the gap G gradually increases. Although displaced, since the bonded substrate 10 is supported by the elastic body 201 as a whole, the bonded substrate 10 is less likely to generate a moment with the elastic force concentration portions 201a and 201b as fulcrums. This means that in the dividing method of the present embodiment, the energy given to the bonded substrate 10 by the pressing of the upper blade 102 contributes to the dividing more efficiently. Specifically, forces F3a and F3b that are opposite to each other and are generated at the planned cutting position of the bonded substrate 10 (the crack CR extension target position) are larger than those of the conventional method. Such forces F3a and F3b effectively act on the extension of the crack CR, and in particular, on the division (tearing) of the adhesive layer 3.

  As a result, in the case of the dividing method according to the present embodiment, the bonded substrate 10 can be appropriately divided without increasing the pressing amount of the upper blade 102 as compared with the conventional method. Further, when the size of the gap angle in the dividing method of the present embodiment is β, β <α holds. Therefore, in the dividing method according to the present embodiment, the problem that the positional deviation occurs in the bonded substrate 10 due to the gap angle α becoming large, which occurred in the case of the conventional dividing method, It is suitably suppressed.

<Prevention of withdrawal after division>
As described above, the bonded substrate 10 can be divided by the three-point bending method by being supported by the elastic body 201. However, when a single bonded substrate 10 is divided at a plurality of locations to obtain a large number of pieces, depending on the combination of the elastic body 201 and the holding tape 5 to which the bonded substrate 10 is bonded, it can be obtained by dividing. The separated pieces may be detached from the holding tape 5. FIG. 5 is a diagram illustrating a situation where such separation occurs. In FIG. 5, the illustration of the bonded substrate 10 is simplified and the illustration of the upper blade 102 and the support 202 is omitted.

  FIG. 5A shows the force acting on the holding tape 5 when the individual piece 10a is obtained by the previous division and then the individual piece 10b is obtained.

  First, as described above, when the force F1 is applied from the upper blade 102 to the bonded substrate 10 to obtain the individual pieces 10b, the formation of the gap G proceeds. At this time, the individual pieces 10b and the bonded pieces that are separated from each other are advanced. An attempt is made to extend the holding tape 5 outward along the surface of the elastic body 201 with respect to the holding tape 5 bonded thereto from the remaining portion (hereinafter also referred to as an individual piece for convenience) 10c. Forces F11a and F11b act. The forces F11a and F11b include components in the direction of the adhesive force acting between the pieces 10b and the portion 10c and the holding tape 5. The forces F11a and F11b are equivalent to forces that cause the holding tape 5 to follow the outward movement of the individual pieces that occur during the division.

  However, the frictional forces F12a and F12b are applied to the holding tape 5 on which the forces F11a and F11b are applied along the surface of the elastic body 201 in the direction opposite to the forces F11a and F11b. To do. Here, the frictional forces F12a and F12b are forces that make the maximum static frictional force the maximum value, and take a larger value as the static friction coefficient is larger. The larger the static friction coefficient is, the more the holding tape 5 is made of a material that is less slippery with respect to the elastic body 201.

  Furthermore, as the upper blade 102 is pushed into the holding tape 5 and the elastic body 201 is compressed, F13a and F13b that try to extend the holding tape toward the center also act. During compression by the upper blade 102, the elastic body 201 is also displaced by receiving a force in the same direction as the holding tape 5, so that a frictional force is not generated between the two when the forces F13a and 13b are applied.

  After all, while the division is performed, the forces F11a and F11b are applied to the holding tape 5 in the outward direction, and the forces F12a and F12b and the forces F13a and 13b are applied in the center direction. Become.

  Therefore, in order to perform the division well, it is required that the forces F11a and F11b exceed the resultant force F12a + F13a and the resultant force F12b + F13b when F12a and F13a are maximum values, respectively. Since the holding tape 5 is made of a material that is difficult to slip with respect to the elastic body 201, the individual pieces 10b can be held on the holding tape 5 when the forces F11a and F11b do not exceed the resultant force F12a + F13a and the resultant force F12b + F13b, respectively. Since the inward force is larger than the outward force to be stretched, the bonding state between the piece 10b and the holding tape 5 is maintained as shown by a broken line portion C in FIG. 5B. It may happen that the piece 10b in the middle of the separation is lifted from the holding tape 5. That is, the piece 10 b obtained by dividing the bonded substrate 10 may be detached from the holding tape 5. Such separation is unlikely to occur in the piece 10c having its own weight greater than that of the piece 10b, but in principle, the same situation can occur.

  FIG. 6 is a diagram illustrating an elastic body 201 on which measures are taken to prevent such a problem from occurring.

  Specifically, in order to reduce the coefficient of static friction between the holding tape 5 and the elastic body 201, that is, to make the holding tape 5 slippery with respect to the elastic body 201, The contact surface 201s is smoothed. Here, examples of the smoothing treatment include film sticking and coating.

  FIG. 7 is a diagram illustrating a state of division when the contact surface 201s of the elastic body 201 is smoothed. In FIG. 7, similarly to FIG. 5, the illustration of the bonded substrate 10 is simplified, and the illustration of the upper blade 102 and the support 202 is omitted.

  First, in FIG. 7 (a), as in FIG. 5 (a), the force acting on the holding tape 5 when the individual piece 10a is obtained by the previous division and then the individual piece 10b is obtained. Is shown. In this case, the type of force acting on the holding tape 5 is the same as that shown in FIG. 5A, but the maximum value of the frictional forces F14a and F14b that the holding tape 5 receives from the elastic body 201 at this time is By smoothing the contact surface 201s and reducing the coefficient of static friction, the frictional forces F12a and F12b shown in FIG. 5A are smaller than the maximum values. As a result, when the forces F11a and F11b are larger than the values of the resultant force F14a + F13a and the resultant force F14b + F13b when the frictional forces F14a and F14b are the maximum static frictional force, the central portion is pressed by the upper blade 102. As shown in FIG. 7B, the holding tape 5 follows when the pieces 10b and 10c are about to move outward. At this time, the holding tape 5 is stretched as indicated by arrows AR11 to AR14, and the piece 10b is divided without being detached.

  More specifically, the frictional forces F14a and F14b acting between the holding tape 5 and the elastic body 201 when the holding tape 5 follows the movement of the pieces 10b and 10c are dynamic frictional forces. This is a value that depends on the dynamic friction coefficient. However, when the contact surface 201s of the elastic body 201 is smoothed, not only the static friction coefficient but also the dynamic friction coefficient is reduced. If it is given, detachment of the piece 10b is suitably suppressed.

  As described above, according to the present embodiment, two brittle material substrates, in particular, a bonded substrate obtained by bonding two brittle material substrates made of different materials with an adhesive is provided at a predetermined scheduled cutting position. In dividing, first, a scribe line is provided at a planned dividing position on one main surface side of the bonded substrate. Then, the main surface on the side where the scribe line is formed is attached to the holding tape, and if necessary, a protective film is attached to the other main surface, and then the bonded substrate is placed with the holding tape side down. Is placed on the elastic body. In such a mounting state, the upper blade is lowered from above to the scheduled cutting position of the bonded substrate. Thereby, the bonded substrate board including the heterogeneous interface can be suitably divided with a pressing amount of the upper blade smaller than that of the conventional three-point bending method. In addition, it is possible to perform satisfactory division without causing a positional shift in the pieces obtained by the division.

  In addition, by performing a smoothing process on the surface of the elastic body, it is possible to suitably suppress separation of the pieces obtained by the division from the holding tape.

<Modification>
Examples of the brittle material substrate according to the above-described embodiment include glass substrates, silicon substrates, various semiconductor substrates, ceramic substrates such as sapphire substrates, alumina substrates, glass ceramic substrates (so-called LTCC substrates), and the like. it can.

  In the case of a heterogeneous material bonded substrate, a protective film is formed on the brittle material substrate side that is easily divided (high brittleness, small thickness) as needed, and brittleness that is difficult to separate (low brittleness, large thickness). It is preferable to form a scribe line on the material substrate side.

DESCRIPTION OF SYMBOLS 1 Glass substrate 2 Semiconductor substrate 3 Adhesive layer 4 Protective film 5 Holding tape 10 Bonded substrate 10a, 10b, 10c (It is obtained by dividing a bonded substrate) Piece 101A, 101B Lower blade 102 Upper blade 201 Elastic body 201a, 201b Elastic force concentration part 201s Contact surface 202 Support body α, β Gap angle A Split planned position CR Crack G Gap S Scribe line

Claims (1)

An apparatus for cutting a brittle material substrate at a predetermined scheduled cutting position,
On one side of the main surface, a scribe line is formed at the planned cutting position, and a holding tape is attached , and the surface supporting the substrate from which the one main surface is directed downward is attached or coated with a film. An elastic body smoothed by
A cutting means for dividing the substrate by lowering the tip of the upper blade provided above the elastic body while bringing it into contact with the planned cutting position ;
The smoothed and becomes elastic body, characterized in der Rukoto that no gaps between the holding tape during cutting of the substrate, cutting device of the brittle material substrate.