JP6190824B2 - 共通ソースｆｅｔよりゲート酸化物が厚いバッファ段ｆｅｔを有する静電放電保護回路 - Google Patents

共通ソースｆｅｔよりゲート酸化物が厚いバッファ段ｆｅｔを有する静電放電保護回路 Download PDF

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JP6190824B2
JP6190824B2 JP2014553410A JP2014553410A JP6190824B2 JP 6190824 B2 JP6190824 B2 JP 6190824B2 JP 2014553410 A JP2014553410 A JP 2014553410A JP 2014553410 A JP2014553410 A JP 2014553410A JP 6190824 B2 JP6190824 B2 JP 6190824B2
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Prior art keywords
transistor
gate
thickness
oxide
fet
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JP2015507851A5 (enExample
JP2015507851A (ja
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ブロッキー ジョナサン
ブロッキー ジョナサン
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日本テキサス・インスツルメンツ株式会社
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H10D89/817—FETs in a Darlington configuration
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2014553410A 2012-01-17 2013-01-17 共通ソースｆｅｔよりゲート酸化物が厚いバッファ段ｆｅｔを有する静電放電保護回路 Active JP6190824B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/351,395 2012-01-17
US13/351,395 US8804290B2 (en) 2012-01-17 2012-01-17 Electrostatic discharge protection circuit having buffer stage FET with thicker gate oxide than common-source FET
PCT/US2013/021944 WO2013109757A1 (en) 2012-01-17 2013-01-17 Electrostatic discharge protection circuit having buffer stage fet with thicker gate oxide than common-source fet

Publications (3)

Publication Number Publication Date
JP2015507851A JP2015507851A (ja) 2015-03-12
JP2015507851A5 JP2015507851A5 (enExample) 2016-03-03
JP6190824B2 true JP6190824B2 (ja) 2017-08-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014553410A Active JP6190824B2 (ja) 2012-01-17 2013-01-17 共通ソースｆｅｔよりゲート酸化物が厚いバッファ段ｆｅｔを有する静電放電保護回路

Country Status (5)

Country Link
US (1) US8804290B2 (enExample)
EP (1) EP2823509A4 (enExample)
JP (1) JP6190824B2 (enExample)
CN (1) CN104054174A (enExample)
WO (1) WO2013109757A1 (enExample)

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* Cited by examiner, † Cited by third party
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US9559170B2 (en) * 2012-03-01 2017-01-31 X-Fab Semiconductor Foundries Ag Electrostatic discharge protection devices
US9196610B1 (en) * 2014-05-13 2015-11-24 Macronix International Co., Ltd. Semiconductor structure and electrostatic discharge protection circuit
US9966941B2 (en) * 2014-08-04 2018-05-08 Texas Instruments Incorporated Wide input range, low output voltage power supply
CN104576640B (zh) * 2014-12-23 2017-06-13 北京时代民芯科技有限公司 一种IO Pad的ESD静电防护结构
US10256227B2 (en) * 2016-04-12 2019-04-09 Vishay-Siliconix Semiconductor device having multiple gate pads
US10749336B2 (en) * 2016-11-28 2020-08-18 Texas Instruments Incorporated ESD protection circuit with passive trigger voltage controlled shut-off
EP3447800B1 (en) * 2017-06-14 2022-01-26 Shenzhen Goodix Technology Co., Ltd. Mos field effect transistor-based filter circuit and chip
CN107731813A (zh) * 2017-11-07 2018-02-23 福建晋润半导体技术有限公司 一种esd保护电路及其制造方法
CN108512207B (zh) * 2018-04-18 2020-01-24 矽力杰半导体技术(杭州)有限公司 静电保护电路
US10826291B2 (en) 2018-09-12 2020-11-03 CoolStar Technology, Inc. Electrostatic discharge transient power clamp
US20200243512A1 (en) * 2019-01-28 2020-07-30 Stmicroelectronics International N.V. Nmos transistor with bulk dynamically coupled to drain
US11695375B2 (en) 2020-12-03 2023-07-04 Nxp Usa, Inc. Power amplifier with a power transistor and an electrostatic discharge protection circuit on separate substrates
US12166455B2 (en) 2020-12-03 2024-12-10 Nxp Usa, Inc. Power amplifier with a power transistor and an electrostatic discharge protection circuit on separate substrates
US11798936B2 (en) * 2021-03-05 2023-10-24 Taiwan Semiconductor Manufacturing Company Ltd. Electrostatic discharge circuits and methods for operating the same
US12143112B2 (en) * 2022-10-12 2024-11-12 Globalfoundries U.S. Inc. Circuit for controlling the slew rate of a transistor
US12294364B2 (en) 2023-08-25 2025-05-06 Globalfoundries U.S. Inc. Transistor with integrated turn-off slew rate control
CN117748432B (zh) * 2023-12-25 2024-11-19 河北美泰电子科技有限公司 汽车微机电系统asic芯片的保护电路及微机电系统

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JPS5132511B2 (enExample) * 1972-01-31 1976-09-13
EP0851552A1 (en) * 1996-12-31 1998-07-01 STMicroelectronics S.r.l. Protection ciruit for an electric supply line in a semiconductor integrated device
JPH10242434A (ja) * 1997-02-26 1998-09-11 Toshiba Corp 半導体集積回路装置及びフラッシュｅｅｐｒｏｍ
US6097235A (en) * 1999-02-09 2000-08-01 United Microelectronics Corp. Field device electrostatic discharge protective circuit
JP3434747B2 (ja) * 1999-09-07 2003-08-11 Ｎｅｃエレクトロニクス株式会社 入力保護回路
US6573568B2 (en) * 2001-06-01 2003-06-03 Winbond Electronics Corp. ESD protection devices and methods for reducing trigger voltage
US7224560B2 (en) * 2003-02-13 2007-05-29 Medtronic, Inc. Destructive electrical transient protection
US7256460B2 (en) * 2004-11-30 2007-08-14 Texas Instruments Incorporated Body-biased pMOS protection against electrostatic discharge
DE102005022129B4 (de) * 2005-05-12 2015-06-18 Infineon Technologies Ag Feldeffekttransistor und Verfahren zum Herstellen eines Feldeffekttransistors
US20070007597A1 (en) * 2005-07-07 2007-01-11 Microchip Technology Incorporated ESD structure having different thickness gate oxides
US8064175B2 (en) * 2005-09-15 2011-11-22 Rambus Inc. Power supply shunt
US7453676B2 (en) * 2005-11-16 2008-11-18 Huh Yoon J RC-triggered ESD power clamp circuit and method for providing ESD protection
US8400743B2 (en) * 2010-06-30 2013-03-19 Advanced Micro Devices, Inc. Electrostatic discharge circuit

Also Published As

Publication number Publication date
JP2015507851A (ja) 2015-03-12
EP2823509A1 (en) 2015-01-14
US8804290B2 (en) 2014-08-12
WO2013109757A1 (en) 2013-07-25
CN104054174A (zh) 2014-09-17
US20130182357A1 (en) 2013-07-18
EP2823509A4 (en) 2015-12-16

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