CN104054174A - 具有带有比共源场效应管厚的栅极氧化物的缓冲级场效应管的静电放电保护电路 - Google Patents

具有带有比共源场效应管厚的栅极氧化物的缓冲级场效应管的静电放电保护电路 Download PDF

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Publication number
CN104054174A
CN104054174A CN201380005884.3A CN201380005884A CN104054174A CN 104054174 A CN104054174 A CN 104054174A CN 201380005884 A CN201380005884 A CN 201380005884A CN 104054174 A CN104054174 A CN 104054174A
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CN
China
Prior art keywords
transistor
gate
source
thickness
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201380005884.3A
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English (en)
Chinese (zh)
Inventor
J·布罗德斯基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of CN104054174A publication Critical patent/CN104054174A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H10D89/817—FETs in a Darlington configuration
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN201380005884.3A 2012-01-17 2013-01-17 具有带有比共源场效应管厚的栅极氧化物的缓冲级场效应管的静电放电保护电路 Pending CN104054174A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/351,395 2012-01-17
US13/351,395 US8804290B2 (en) 2012-01-17 2012-01-17 Electrostatic discharge protection circuit having buffer stage FET with thicker gate oxide than common-source FET
PCT/US2013/021944 WO2013109757A1 (en) 2012-01-17 2013-01-17 Electrostatic discharge protection circuit having buffer stage fet with thicker gate oxide than common-source fet

Publications (1)

Publication Number Publication Date
CN104054174A true CN104054174A (zh) 2014-09-17

Family

ID=48779791

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380005884.3A Pending CN104054174A (zh) 2012-01-17 2013-01-17 具有带有比共源场效应管厚的栅极氧化物的缓冲级场效应管的静电放电保护电路

Country Status (5)

Country Link
US (1) US8804290B2 (enExample)
EP (1) EP2823509A4 (enExample)
JP (1) JP6190824B2 (enExample)
CN (1) CN104054174A (enExample)
WO (1) WO2013109757A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104576640A (zh) * 2014-12-23 2015-04-29 北京时代民芯科技有限公司 一种IO Pad的ESD静电防护结构
CN108512207A (zh) * 2018-04-18 2018-09-07 矽力杰半导体技术(杭州)有限公司 静电保护电路
CN109196631A (zh) * 2016-04-12 2019-01-11 维西埃-硅化物公司 具有多个栅极垫的半导体器件
CN111490697A (zh) * 2019-01-28 2020-08-04 意法半导体国际有限公司 具有动态耦合到漏极的本体的nmos晶体管
CN117748432A (zh) * 2023-12-25 2024-03-22 河北美泰电子科技有限公司 汽车微机电系统asic芯片的保护电路及微机电系统

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9559170B2 (en) * 2012-03-01 2017-01-31 X-Fab Semiconductor Foundries Ag Electrostatic discharge protection devices
US9196610B1 (en) * 2014-05-13 2015-11-24 Macronix International Co., Ltd. Semiconductor structure and electrostatic discharge protection circuit
US9966941B2 (en) * 2014-08-04 2018-05-08 Texas Instruments Incorporated Wide input range, low output voltage power supply
US10749336B2 (en) * 2016-11-28 2020-08-18 Texas Instruments Incorporated ESD protection circuit with passive trigger voltage controlled shut-off
EP3447800B1 (en) * 2017-06-14 2022-01-26 Shenzhen Goodix Technology Co., Ltd. Mos field effect transistor-based filter circuit and chip
CN107731813A (zh) * 2017-11-07 2018-02-23 福建晋润半导体技术有限公司 一种esd保护电路及其制造方法
US10826291B2 (en) 2018-09-12 2020-11-03 CoolStar Technology, Inc. Electrostatic discharge transient power clamp
US11695375B2 (en) 2020-12-03 2023-07-04 Nxp Usa, Inc. Power amplifier with a power transistor and an electrostatic discharge protection circuit on separate substrates
US12166455B2 (en) 2020-12-03 2024-12-10 Nxp Usa, Inc. Power amplifier with a power transistor and an electrostatic discharge protection circuit on separate substrates
US11798936B2 (en) * 2021-03-05 2023-10-24 Taiwan Semiconductor Manufacturing Company Ltd. Electrostatic discharge circuits and methods for operating the same
US12143112B2 (en) * 2022-10-12 2024-11-12 Globalfoundries U.S. Inc. Circuit for controlling the slew rate of a transistor
US12294364B2 (en) 2023-08-25 2025-05-06 Globalfoundries U.S. Inc. Transistor with integrated turn-off slew rate control

Citations (6)

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Publication number Priority date Publication date Assignee Title
EP0851552A1 (en) * 1996-12-31 1998-07-01 STMicroelectronics S.r.l. Protection ciruit for an electric supply line in a semiconductor integrated device
US6097235A (en) * 1999-02-09 2000-08-01 United Microelectronics Corp. Field device electrostatic discharge protective circuit
TW417284B (en) * 1997-02-26 2001-01-01 Toshiba Corp Semiconductor integrated circuit device and flash EEPROM
US20040160717A1 (en) * 2003-02-13 2004-08-19 May James T. Destructive electrical transient protection
CN1866541A (zh) * 2005-05-12 2006-11-22 英飞凌科技股份公司 场效应晶体管和制造场效应晶体管的方法
US20070058306A1 (en) * 2005-09-15 2007-03-15 Rambus, Inc. Power supply shunt

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5132511B2 (enExample) * 1972-01-31 1976-09-13
JP3434747B2 (ja) * 1999-09-07 2003-08-11 Ｎｅｃエレクトロニクス株式会社 入力保護回路
US6573568B2 (en) * 2001-06-01 2003-06-03 Winbond Electronics Corp. ESD protection devices and methods for reducing trigger voltage
US7256460B2 (en) * 2004-11-30 2007-08-14 Texas Instruments Incorporated Body-biased pMOS protection against electrostatic discharge
US20070007597A1 (en) * 2005-07-07 2007-01-11 Microchip Technology Incorporated ESD structure having different thickness gate oxides
US7453676B2 (en) * 2005-11-16 2008-11-18 Huh Yoon J RC-triggered ESD power clamp circuit and method for providing ESD protection
US8400743B2 (en) * 2010-06-30 2013-03-19 Advanced Micro Devices, Inc. Electrostatic discharge circuit

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0851552A1 (en) * 1996-12-31 1998-07-01 STMicroelectronics S.r.l. Protection ciruit for an electric supply line in a semiconductor integrated device
TW417284B (en) * 1997-02-26 2001-01-01 Toshiba Corp Semiconductor integrated circuit device and flash EEPROM
US6097235A (en) * 1999-02-09 2000-08-01 United Microelectronics Corp. Field device electrostatic discharge protective circuit
US20040160717A1 (en) * 2003-02-13 2004-08-19 May James T. Destructive electrical transient protection
CN1866541A (zh) * 2005-05-12 2006-11-22 英飞凌科技股份公司 场效应晶体管和制造场效应晶体管的方法
US20070058306A1 (en) * 2005-09-15 2007-03-15 Rambus, Inc. Power supply shunt

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104576640A (zh) * 2014-12-23 2015-04-29 北京时代民芯科技有限公司 一种IO Pad的ESD静电防护结构
CN104576640B (zh) * 2014-12-23 2017-06-13 北京时代民芯科技有限公司 一种IO Pad的ESD静电防护结构
CN109196631A (zh) * 2016-04-12 2019-01-11 维西埃-硅化物公司 具有多个栅极垫的半导体器件
CN109196631B (zh) * 2016-04-12 2024-03-08 维西埃-硅化物公司 具有多个栅极垫的半导体器件
CN108512207A (zh) * 2018-04-18 2018-09-07 矽力杰半导体技术(杭州)有限公司 静电保护电路
TWI696258B (zh) * 2018-04-18 2020-06-11 香港商南京矽力杰半導體（香港）有限公司 靜電保護電路
CN111490697A (zh) * 2019-01-28 2020-08-04 意法半导体国际有限公司 具有动态耦合到漏极的本体的nmos晶体管
CN117748432A (zh) * 2023-12-25 2024-03-22 河北美泰电子科技有限公司 汽车微机电系统asic芯片的保护电路及微机电系统

Also Published As

Publication number Publication date
JP2015507851A (ja) 2015-03-12
EP2823509A1 (en) 2015-01-14
US8804290B2 (en) 2014-08-12
WO2013109757A1 (en) 2013-07-25
JP6190824B2 (ja) 2017-08-30
US20130182357A1 (en) 2013-07-18
EP2823509A4 (en) 2015-12-16

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Application publication date: 20140917

RJ01 Rejection of invention patent application after publication