JP6182677B2 - ウエハーの損傷深さを測定する方法 - Google Patents

ウエハーの損傷深さを測定する方法 Download PDF

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JP6182677B2
JP6182677B2 JP2016544283A JP2016544283A JP6182677B2 JP 6182677 B2 JP6182677 B2 JP 6182677B2 JP 2016544283 A JP2016544283 A JP 2016544283A JP 2016544283 A JP2016544283 A JP 2016544283A JP 6182677 B2 JP6182677 B2 JP 6182677B2
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wafer
curve
damage
ray
distance
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JP2016532127A (ja
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イ，キュヒョン
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エルジー・シルトロン・インコーポレーテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/207—Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/607—Specific applications or type of materials strain
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2016544283A 2013-09-30 2014-08-12 ウエハーの損傷深さを測定する方法 Active JP6182677B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2013-0116346 2013-09-30
KR20130116346A KR101414205B1 (ko) 2013-09-30 2013-09-30 웨이퍼의 기계적 손상 깊이를 측정하는 방법
PCT/KR2014/007480 WO2015046752A1 (ko) 2013-09-30 2014-08-12 웨이퍼의 손상 깊이를 측정하는 방법

Publications (2)

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JP2016532127A JP2016532127A (ja) 2016-10-13
JP6182677B2 true JP6182677B2 (ja) 2017-08-16

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JP2016544283A Active JP6182677B2 (ja) 2013-09-30 2014-08-12 ウエハーの損傷深さを測定する方法

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US (1) US9857319B2 (de)
JP (1) JP6182677B2 (de)
KR (1) KR101414205B1 (de)
CN (1) CN105593983B (de)
DE (1) DE112014004515B4 (de)
WO (1) WO2015046752A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106289727B (zh) * 2016-07-27 2019-03-15 中国工程物理研究院激光聚变研究中心 一种元件激光损伤测量方法及装置
CN112945995B (zh) * 2021-02-04 2023-08-01 哈尔滨工业大学 一种光学晶体超精密加工亚表面损伤缺陷的解析方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05288540A (ja) * 1992-04-09 1993-11-02 Sumitomo Metal Mining Co Ltd 単結晶加工歪層厚の測定方法
US5387459A (en) * 1992-12-17 1995-02-07 Eastman Kodak Company Multilayer structure having an epitaxial metal electrode
GB9226552D0 (en) 1992-12-21 1993-02-17 Philips Electronics Uk Ltd A method of determining a given characteristic of a material sample
JP3536203B2 (ja) 1999-06-09 2004-06-07 東芝セラミックス株式会社 ウェーハの結晶欠陥測定方法及び装置
JP4543141B2 (ja) 1999-07-13 2010-09-15 レーザーテック株式会社 欠陥検査装置
JP2002368000A (ja) * 2001-06-06 2002-12-20 Shin Etsu Handotai Co Ltd シリコンウェーハの評価方法
KR100467909B1 (ko) * 2001-11-30 2005-02-02 모새닷컴(주) 사파이어 웨이퍼의 화학-기계적 광택공정에서의 표면처리공정방법
KR100526215B1 (ko) 2003-08-21 2005-11-03 주식회사 실트론 실리콘 단결정 웨이퍼의 제조방법 및 제조장치
JP4277826B2 (ja) * 2005-06-23 2009-06-10 住友電気工業株式会社 窒化物結晶、窒化物結晶基板、エピ層付窒化物結晶基板、ならびに半導体デバイスおよびその製造方法
KR20070065732A (ko) * 2005-12-20 2007-06-25 주식회사 실트론 웨이퍼의 표면 손상 평가를 위한 최적 조건 도출 방법,전처리 방법 및 이를 이용한 웨이퍼의 표면 손상 평가 방법
KR100933313B1 (ko) * 2007-11-06 2009-12-22 한국표준과학연구원 웨이퍼 두께변화 측정 방법 및 장치
JP2010249784A (ja) 2009-04-20 2010-11-04 Rigaku Corp Ｘ線回折分析システム、および、ｘ線回折分析方法
JP5599062B2 (ja) * 2010-12-06 2014-10-01 株式会社リガク Ｘ線回折装置及びｘ線回折測定方法
US8605858B2 (en) * 2011-06-27 2013-12-10 Honeywell International Inc. Methods and systems for inspecting structures for crystallographic imperfections
JP5704092B2 (ja) * 2012-02-27 2015-04-22 信越半導体株式会社 ウェーハ面取り部の品質検査方法
KR101360906B1 (ko) * 2012-11-16 2014-02-11 한국표준과학연구원 고분해능 x-선 로킹 커브 측정을 이용한 단결정 웨이퍼의 면방위 측정 방법

Also Published As

Publication number Publication date
WO2015046752A1 (ko) 2015-04-02
US9857319B2 (en) 2018-01-02
DE112014004515B4 (de) 2024-01-25
CN105593983B (zh) 2017-12-08
CN105593983A (zh) 2016-05-18
JP2016532127A (ja) 2016-10-13
DE112014004515T5 (de) 2016-06-16
US20160238544A1 (en) 2016-08-18
KR101414205B1 (ko) 2014-07-01

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