JP6181665B2 - 安定化された金属酸化物層を有する光電デバイスの形成方法 - Google Patents

安定化された金属酸化物層を有する光電デバイスの形成方法 Download PDF

Info

Publication number
JP6181665B2
JP6181665B2 JP2014547308A JP2014547308A JP6181665B2 JP 6181665 B2 JP6181665 B2 JP 6181665B2 JP 2014547308 A JP2014547308 A JP 2014547308A JP 2014547308 A JP2014547308 A JP 2014547308A JP 6181665 B2 JP6181665 B2 JP 6181665B2
Authority
JP
Japan
Prior art keywords
metal oxide
layer
oxide
absorber
photoactive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2014547308A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015507353A (ja
JP2015507353A5 (enExample
Inventor
エム.マレク アンドルゼジ
エム.マレク アンドルゼジ
エル.ブリデン トッド
エル.ブリデン トッド
シー.レバロン ピーター
シー.レバロン ピーター
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Global Technologies LLC
Original Assignee
Dow Global Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Global Technologies LLC filed Critical Dow Global Technologies LLC
Publication of JP2015507353A publication Critical patent/JP2015507353A/ja
Publication of JP2015507353A5 publication Critical patent/JP2015507353A5/ja
Application granted granted Critical
Publication of JP6181665B2 publication Critical patent/JP6181665B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/30Coatings
    • H10F77/306Coatings for devices having potential barriers
    • H10F77/311Coatings for devices having potential barriers for photovoltaic cells
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23Oxides
    • C03C17/245Oxides by deposition from the vapour phase
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23Oxides
    • C03C17/245Oxides by deposition from the vapour phase
    • C03C17/2453Coating containing SnO2
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3417Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/20Materials for coating a single layer on glass
    • C03C2217/21Oxides
    • C03C2217/216ZnO
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/20Materials for coating a single layer on glass
    • C03C2217/21Oxides
    • C03C2217/23Mixtures
    • C03C2217/231In2O3/SnO2
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/20Materials for coating a single layer on glass
    • C03C2217/21Oxides
    • C03C2217/24Doped oxides
    • C03C2217/243Doped oxides with S, Se, Te
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/70Properties of coatings
    • C03C2217/76Hydrophobic and oleophobic coatings
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/90Other aspects of coatings
    • C03C2217/94Transparent conductive oxide layers [TCO] being part of a multilayer coating
    • C03C2217/944Layers comprising zinc oxide
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/90Other aspects of coatings
    • C03C2217/94Transparent conductive oxide layers [TCO] being part of a multilayer coating
    • C03C2217/948Layers comprising indium tin oxide [ITO]
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00Methods for coating glass
    • C03C2218/10Deposition methods
    • C03C2218/15Deposition methods from the vapour phase
    • C03C2218/154Deposition methods from the vapour phase by sputtering
    • C03C2218/156Deposition methods from the vapour phase by sputtering by magnetron sputtering
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00Methods for coating glass
    • C03C2218/30Aspects of methods for coating glass not covered above
    • C03C2218/32After-treatment
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Electroluminescent Light Sources (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
JP2014547308A 2011-12-15 2012-12-07 安定化された金属酸化物層を有する光電デバイスの形成方法 Expired - Fee Related JP6181665B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161570954P 2011-12-15 2011-12-15
US61/570,954 2011-12-15
PCT/US2012/068354 WO2013090131A2 (en) 2011-12-15 2012-12-07 Method of forming optoelectronic device having a stabilized metal oxide layer

Publications (3)

Publication Number Publication Date
JP2015507353A JP2015507353A (ja) 2015-03-05
JP2015507353A5 JP2015507353A5 (enExample) 2016-01-21
JP6181665B2 true JP6181665B2 (ja) 2017-08-16

Family

ID=47520252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014547308A Expired - Fee Related JP6181665B2 (ja) 2011-12-15 2012-12-07 安定化された金属酸化物層を有する光電デバイスの形成方法

Country Status (9)

Country Link
US (1) US20140290738A1 (enExample)
EP (1) EP2791072B1 (enExample)
JP (1) JP6181665B2 (enExample)
KR (1) KR20140114366A (enExample)
CN (1) CN103998388B (enExample)
BR (1) BR112014014471A2 (enExample)
IN (1) IN2014CN04559A (enExample)
MX (1) MX2014007159A (enExample)
WO (1) WO2013090131A2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140290738A1 (en) * 2011-12-15 2014-10-02 Dow Global Technologies Llc Method of forming optoelectronic device having a stabilized metal oxide layer
KR102009308B1 (ko) * 2018-02-28 2019-08-09 한국에너지기술연구원 산화갈륨 패시베이션층이 삽입된 고효율 양면 투광형 cigs계 태양전지와 그 제조방법 및 이를 적용한 건물일체형태양광발전모듈과 탠덤태양전지

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4612411A (en) * 1985-06-04 1986-09-16 Atlantic Richfield Company Thin film solar cell with ZnO window layer
JP2915812B2 (ja) * 1994-12-07 1999-07-05 科学技術振興事業団 微粒子膜の転写付着方法
EP0743686A3 (en) * 1995-05-15 1998-12-02 Matsushita Electric Industrial Co., Ltd Precursor for semiconductor thin films and method for producing semiconductor thin films
JPH08330071A (ja) * 1995-06-02 1996-12-13 Sony Corp 光学的素子及びその製造方法
JP3873424B2 (ja) * 1997-02-28 2007-01-24 住友化学株式会社 含ケイ素化合物およびそれを用いた有機エレクトロルミネッセンス素子
JPH114009A (ja) * 1997-06-12 1999-01-06 Yamaha Corp 太陽電池の製造方法
US20060057766A1 (en) * 2003-07-08 2006-03-16 Quanxi Jia Method for preparation of semiconductive films
US20070295390A1 (en) * 2006-05-05 2007-12-27 Nanosolar, Inc. Individually encapsulated solar cells and solar cell strings having a substantially inorganic protective layer
FR2911336B3 (fr) * 2007-01-15 2009-03-20 Saint Gobain Substrat verrier revetu de couches a tenue mecanique amelioree
CN102362355A (zh) * 2009-03-25 2012-02-22 陶氏环球技术有限责任公司 在薄膜光伏制品上形成保护层的方法和用这样的层制成的制品
DE102009050988B3 (de) * 2009-05-12 2010-11-04 Schott Ag Dünnschichtsolarzelle
TWI514608B (zh) * 2010-01-14 2015-12-21 Dow Global Technologies Llc 具曝露式導電柵格之防溼光伏打裝置
BR112012027715A2 (pt) * 2010-04-30 2016-09-06 Dow Global Technologies Llc método e célula fotovoltaica
CN103119674A (zh) * 2010-06-29 2013-05-22 曳达研究和发展有限公司 光伏电池及其制造方法
US8642884B2 (en) * 2011-09-09 2014-02-04 International Business Machines Corporation Heat treatment process and photovoltaic device based on said process
US20140290738A1 (en) * 2011-12-15 2014-10-02 Dow Global Technologies Llc Method of forming optoelectronic device having a stabilized metal oxide layer

Also Published As

Publication number Publication date
CN103998388B (zh) 2017-06-13
US20140290738A1 (en) 2014-10-02
CN103998388A (zh) 2014-08-20
BR112014014471A8 (pt) 2017-06-13
IN2014CN04559A (enExample) 2015-09-18
JP2015507353A (ja) 2015-03-05
BR112014014471A2 (pt) 2017-06-13
MX2014007159A (es) 2014-08-29
EP2791072A2 (en) 2014-10-22
KR20140114366A (ko) 2014-09-26
EP2791072B1 (en) 2016-05-11
WO2013090131A3 (en) 2013-09-26
WO2013090131A2 (en) 2013-06-20

Similar Documents

Publication Publication Date Title
US8921148B2 (en) Moisture resistant photovoltaic devices with exposed conductive grid
ES2431608T3 (es) Célula solar de película delgada y método de fabricación
US20100243046A1 (en) Method of forming a protective layer on thin-film photovoltaic articles and articles made with such a layer
JP6096790B2 (ja) 光電池のための導電性基材
US9356177B2 (en) Method of manufacture of chalcogenide-based photovoltaic cells
KR20120102067A (ko) n형 칼코게나이드 합성물의 제조 및 광전지 디바이스에서의 그 용도
US20140053896A1 (en) Method for producing the pentanary compound semiconductor cztsse, and thin-film solar cell
US9059349B2 (en) Moisture resistant photovoltaic devices with improved adhesion of barrier film
CN111490117B (zh) 用于薄膜太阳能电池的层系统
US8604336B2 (en) Photovoltaic device with transparent, conductive barrier layer
JP6181665B2 (ja) 安定化された金属酸化物層を有する光電デバイスの形成方法
US20170345651A1 (en) Method for producing a layer system for thin-film solar cells having a sodium indium sulfide buffer layer

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151126

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20151126

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160921

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20161004

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20161227

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170223

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170314

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170614

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170620

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170720

R150 Certificate of patent or registration of utility model

Ref document number: 6181665

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees