JP2015507353A5 - - Google Patents
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- Publication number
- JP2015507353A5 JP2015507353A5 JP2014547308A JP2014547308A JP2015507353A5 JP 2015507353 A5 JP2015507353 A5 JP 2015507353A5 JP 2014547308 A JP2014547308 A JP 2014547308A JP 2014547308 A JP2014547308 A JP 2014547308A JP 2015507353 A5 JP2015507353 A5 JP 2015507353A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- metal oxide
- absorber
- oxide
- photoactive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161570954P | 2011-12-15 | 2011-12-15 | |
| US61/570,954 | 2011-12-15 | ||
| PCT/US2012/068354 WO2013090131A2 (en) | 2011-12-15 | 2012-12-07 | Method of forming optoelectronic device having a stabilized metal oxide layer |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015507353A JP2015507353A (ja) | 2015-03-05 |
| JP2015507353A5 true JP2015507353A5 (enExample) | 2016-01-21 |
| JP6181665B2 JP6181665B2 (ja) | 2017-08-16 |
Family
ID=47520252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014547308A Expired - Fee Related JP6181665B2 (ja) | 2011-12-15 | 2012-12-07 | 安定化された金属酸化物層を有する光電デバイスの形成方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20140290738A1 (enExample) |
| EP (1) | EP2791072B1 (enExample) |
| JP (1) | JP6181665B2 (enExample) |
| KR (1) | KR20140114366A (enExample) |
| CN (1) | CN103998388B (enExample) |
| BR (1) | BR112014014471A2 (enExample) |
| IN (1) | IN2014CN04559A (enExample) |
| MX (1) | MX2014007159A (enExample) |
| WO (1) | WO2013090131A2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140290738A1 (en) * | 2011-12-15 | 2014-10-02 | Dow Global Technologies Llc | Method of forming optoelectronic device having a stabilized metal oxide layer |
| KR102009308B1 (ko) * | 2018-02-28 | 2019-08-09 | 한국에너지기술연구원 | 산화갈륨 패시베이션층이 삽입된 고효율 양면 투광형 cigs계 태양전지와 그 제조방법 및 이를 적용한 건물일체형태양광발전모듈과 탠덤태양전지 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4612411A (en) * | 1985-06-04 | 1986-09-16 | Atlantic Richfield Company | Thin film solar cell with ZnO window layer |
| JP2915812B2 (ja) * | 1994-12-07 | 1999-07-05 | 科学技術振興事業団 | 微粒子膜の転写付着方法 |
| EP0743686A3 (en) * | 1995-05-15 | 1998-12-02 | Matsushita Electric Industrial Co., Ltd | Precursor for semiconductor thin films and method for producing semiconductor thin films |
| JPH08330071A (ja) * | 1995-06-02 | 1996-12-13 | Sony Corp | 光学的素子及びその製造方法 |
| JP3873424B2 (ja) * | 1997-02-28 | 2007-01-24 | 住友化学株式会社 | 含ケイ素化合物およびそれを用いた有機エレクトロルミネッセンス素子 |
| JPH114009A (ja) * | 1997-06-12 | 1999-01-06 | Yamaha Corp | 太陽電池の製造方法 |
| US20060057766A1 (en) * | 2003-07-08 | 2006-03-16 | Quanxi Jia | Method for preparation of semiconductive films |
| US20070295390A1 (en) * | 2006-05-05 | 2007-12-27 | Nanosolar, Inc. | Individually encapsulated solar cells and solar cell strings having a substantially inorganic protective layer |
| FR2911336B3 (fr) * | 2007-01-15 | 2009-03-20 | Saint Gobain | Substrat verrier revetu de couches a tenue mecanique amelioree |
| CN102362355A (zh) * | 2009-03-25 | 2012-02-22 | 陶氏环球技术有限责任公司 | 在薄膜光伏制品上形成保护层的方法和用这样的层制成的制品 |
| DE102009050988B3 (de) * | 2009-05-12 | 2010-11-04 | Schott Ag | Dünnschichtsolarzelle |
| TWI514608B (zh) * | 2010-01-14 | 2015-12-21 | Dow Global Technologies Llc | 具曝露式導電柵格之防溼光伏打裝置 |
| BR112012027715A2 (pt) * | 2010-04-30 | 2016-09-06 | Dow Global Technologies Llc | método e célula fotovoltaica |
| CN103119674A (zh) * | 2010-06-29 | 2013-05-22 | 曳达研究和发展有限公司 | 光伏电池及其制造方法 |
| US8642884B2 (en) * | 2011-09-09 | 2014-02-04 | International Business Machines Corporation | Heat treatment process and photovoltaic device based on said process |
| US20140290738A1 (en) * | 2011-12-15 | 2014-10-02 | Dow Global Technologies Llc | Method of forming optoelectronic device having a stabilized metal oxide layer |
-
2012
- 2012-12-07 US US14/359,936 patent/US20140290738A1/en not_active Abandoned
- 2012-12-07 EP EP12812438.5A patent/EP2791072B1/en not_active Not-in-force
- 2012-12-07 BR BR112014014471A patent/BR112014014471A2/pt not_active IP Right Cessation
- 2012-12-07 KR KR1020147019432A patent/KR20140114366A/ko not_active Ceased
- 2012-12-07 MX MX2014007159A patent/MX2014007159A/es not_active Application Discontinuation
- 2012-12-07 CN CN201280061695.3A patent/CN103998388B/zh not_active Expired - Fee Related
- 2012-12-07 WO PCT/US2012/068354 patent/WO2013090131A2/en not_active Ceased
- 2012-12-07 IN IN4559CHN2014 patent/IN2014CN04559A/en unknown
- 2012-12-07 JP JP2014547308A patent/JP6181665B2/ja not_active Expired - Fee Related
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