JP6177168B2 - エッチング被加工材及びそれを用いたエッチング方法 - Google Patents

エッチング被加工材及びそれを用いたエッチング方法 Download PDF

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Publication number
JP6177168B2
JP6177168B2 JP2014056849A JP2014056849A JP6177168B2 JP 6177168 B2 JP6177168 B2 JP 6177168B2 JP 2014056849 A JP2014056849 A JP 2014056849A JP 2014056849 A JP2014056849 A JP 2014056849A JP 6177168 B2 JP6177168 B2 JP 6177168B2
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Japan
Prior art keywords
etching
meth
thermal resistance
acrylate
resistance value
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Expired - Fee Related
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JP2014056849A
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Japanese (ja)
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JP2014239208A (ja
Inventor
勇男 坂田
勇男 坂田
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Asahi Kasei Corp
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Asahi Kasei Corp
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Priority to JP2014056849A priority Critical patent/JP6177168B2/ja
Priority to CN201490000650.XU priority patent/CN205406494U/zh
Priority to PCT/JP2014/062257 priority patent/WO2014181798A1/fr
Priority to TW103208059U priority patent/TWM492521U/zh
Publication of JP2014239208A publication Critical patent/JP2014239208A/ja
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Publication of JP6177168B2 publication Critical patent/JP6177168B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Micromachines (AREA)
JP2014056849A 2013-05-08 2014-03-19 エッチング被加工材及びそれを用いたエッチング方法 Expired - Fee Related JP6177168B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014056849A JP6177168B2 (ja) 2013-05-08 2014-03-19 エッチング被加工材及びそれを用いたエッチング方法
CN201490000650.XU CN205406494U (zh) 2013-05-08 2014-05-07 被蚀刻加工材料
PCT/JP2014/062257 WO2014181798A1 (fr) 2013-05-08 2014-05-07 Matériau à graver
TW103208059U TWM492521U (zh) 2013-05-08 2014-05-08 蝕刻被加工材及使用其之半導體發光元件

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013098809 2013-05-08
JP2013098809 2013-05-08
JP2014056849A JP6177168B2 (ja) 2013-05-08 2014-03-19 エッチング被加工材及びそれを用いたエッチング方法

Publications (2)

Publication Number Publication Date
JP2014239208A JP2014239208A (ja) 2014-12-18
JP6177168B2 true JP6177168B2 (ja) 2017-08-09

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JP2014056849A Expired - Fee Related JP6177168B2 (ja) 2013-05-08 2014-03-19 エッチング被加工材及びそれを用いたエッチング方法

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Country Link
JP (1) JP6177168B2 (fr)
CN (1) CN205406494U (fr)
TW (1) TWM492521U (fr)
WO (1) WO2014181798A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5927543B2 (ja) * 2013-07-24 2016-06-01 パナソニックＩｐマネジメント株式会社 ＧａＮ層の素子分離方法
JP6403017B2 (ja) 2015-08-04 2018-10-10 東芝メモリ株式会社 インプリント用テンプレート基板の製造方法、インプリント用テンプレート基板、インプリント用テンプレート、および半導体装置の製造方法
JP6548024B2 (ja) * 2015-09-24 2019-07-24 国立研究開発法人情報通信研究機構 凹凸構造を含む基板の製造方法及び半導体発光素子の製造方法
US9793132B1 (en) * 2016-05-13 2017-10-17 Applied Materials, Inc. Etch mask for hybrid laser scribing and plasma etch wafer singulation process
JP6724687B2 (ja) * 2016-08-01 2020-07-15 日亜化学工業株式会社 ナノロッドの形成方法及び半導体素子の製造方法
KR102244791B1 (ko) 2017-12-15 2021-04-26 주식회사 엘지화학 편광판, 편광판-캐리어 필름 적층체, 편광판-캐리어 필름 적층체의 제조방법, 편광판의 제조방법 및 활성 에너지선 경화형 조성물
US10606171B2 (en) * 2018-02-14 2020-03-31 Canon Kabushiki Kaisha Superstrate and a method of using the same
CN115349165A (zh) * 2020-03-31 2022-11-15 东丽株式会社 无机固体物图案的制造方法及无机固体物图案

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009105252A (ja) * 2007-10-24 2009-05-14 Cheil Industries Inc 微細パターンの製造方法および光学素子
JP2010045213A (ja) * 2008-08-13 2010-02-25 Fujitsu Microelectronics Ltd 基板処理装置及び基板処理方法
JP5679281B2 (ja) * 2010-10-18 2015-03-04 旭化成イーマテリアルズ株式会社 積層体、及び積層体を用いたモールドの製造方法
JP5142236B1 (ja) * 2011-11-15 2013-02-13 エルシード株式会社 エッチング方法

Also Published As

Publication number Publication date
WO2014181798A1 (fr) 2014-11-13
TWM492521U (zh) 2014-12-21
JP2014239208A (ja) 2014-12-18
CN205406494U (zh) 2016-07-27

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