JP6164721B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6164721B2 JP6164721B2 JP2012247764A JP2012247764A JP6164721B2 JP 6164721 B2 JP6164721 B2 JP 6164721B2 JP 2012247764 A JP2012247764 A JP 2012247764A JP 2012247764 A JP2012247764 A JP 2012247764A JP 6164721 B2 JP6164721 B2 JP 6164721B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- component
- semiconductor device
- wiring
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
- H01L2924/30111—Impedance matching
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- Filters And Equalizers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012247764A JP6164721B2 (ja) | 2012-11-09 | 2012-11-09 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012247764A JP6164721B2 (ja) | 2012-11-09 | 2012-11-09 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014096497A JP2014096497A (ja) | 2014-05-22 |
| JP2014096497A5 JP2014096497A5 (enExample) | 2015-12-24 |
| JP6164721B2 true JP6164721B2 (ja) | 2017-07-19 |
Family
ID=50939346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012247764A Active JP6164721B2 (ja) | 2012-11-09 | 2012-11-09 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6164721B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6569417B2 (ja) * | 2015-09-16 | 2019-09-04 | 三菱電機株式会社 | 増幅器 |
| JP6316512B1 (ja) * | 2017-03-28 | 2018-04-25 | 三菱電機株式会社 | 半導体装置 |
| JP2022138983A (ja) * | 2021-03-11 | 2022-09-26 | 住友電気工業株式会社 | 半導体装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54134976A (en) * | 1978-04-12 | 1979-10-19 | Nec Corp | High-frequency transistor |
| JPS5648156A (en) * | 1979-09-26 | 1981-05-01 | Nec Corp | Transistor |
| JPS5877052U (ja) * | 1981-11-17 | 1983-05-24 | 株式会社東芝 | トランジスタ外囲器 |
| US6177834B1 (en) * | 1998-12-02 | 2001-01-23 | Ericsson, Inc. | Output matched LDMOS power transistor device |
| JP2003115732A (ja) * | 2001-10-03 | 2003-04-18 | Hitachi Ltd | 半導体装置 |
| US6734728B1 (en) * | 2002-12-19 | 2004-05-11 | Infineon Technologies North America Corp. | RF power transistor with internal bias feed |
| JP2005110119A (ja) * | 2003-10-01 | 2005-04-21 | Mitsubishi Electric Corp | 高周波トランジスタ装置 |
-
2012
- 2012-11-09 JP JP2012247764A patent/JP6164721B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014096497A (ja) | 2014-05-22 |
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