JP6154465B2 - 能動及び受動構造を備えたフォトニック回路を製造する方法 - Google Patents
能動及び受動構造を備えたフォトニック回路を製造する方法 Download PDFInfo
- Publication number
- JP6154465B2 JP6154465B2 JP2015520854A JP2015520854A JP6154465B2 JP 6154465 B2 JP6154465 B2 JP 6154465B2 JP 2015520854 A JP2015520854 A JP 2015520854A JP 2015520854 A JP2015520854 A JP 2015520854A JP 6154465 B2 JP6154465 B2 JP 6154465B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- waveguide layer
- wafer
- silicon
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 238000000034 method Methods 0.000 title description 48
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 47
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 45
- 239000010703 silicon Substances 0.000 claims description 44
- 229910052710 silicon Inorganic materials 0.000 claims description 43
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 31
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 238000005516 engineering process Methods 0.000 claims description 13
- 238000005253 cladding Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 238000000137 annealing Methods 0.000 claims description 10
- 230000008878 coupling Effects 0.000 claims description 9
- 238000010168 coupling process Methods 0.000 claims description 9
- 238000005859 coupling reaction Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 7
- 238000002513 implantation Methods 0.000 claims description 5
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 3
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 78
- 230000008569 process Effects 0.000 description 38
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Optical Integrated Circuits (AREA)
Description
第1のウエハー上に第1のレイヤスタックを製造し、第1のレイヤスタックは、下部クラッド酸化物層と、1.8より高い屈折率を有する高屈折率導波路層とを有し、
高屈折率導波路層をパターニングし、それにより、受動フォトニック構造を含んだ、パターニングされた高屈折率導波路層を生成し、
第1のウエハー上の第1のレイヤスタックを、高屈折率導波路層の上で300ナノメートル未満の厚さを有する平坦化酸化物層で平坦化し、
平坦化酸化物層の前及び/又は後に、パターニングされた高屈折率導波路層をアニールし、それにより、アニールされたパターニングされた高屈折率導波路層を生成し、
第2のウエハー上に第2のレイヤスタックを製造し、第2のレイヤスタックは、剥離可能な単結晶シリコン導波路層を有し、
第2のレイヤスタックを有する第2のウエハーを、第1のレイヤスタックを有する第1のウエハーの上に移動し、且つ第1のレイヤスタックと第2のレイヤスタックとを接合し、
第2のウエハーの基板を除去し、
単結晶シリコン導波路層内に能動フォトニックデバイスを製造し、それにより、能動フォトニックデバイスを有する単結晶シリコン導波路層を生成し、且つ
能動フォトニックデバイスを有する単結晶シリコン導波路層と、アニールされたパターニングされた高屈折率導波路層との間に、エバネセント結合を実現する
ことを有する。
Claims (8)
- 第1のウエハー上に第1のレイヤスタックを製造し、前記第1のレイヤスタックは、下部クラッド酸化物層と、1.8より高い屈折率を有する高屈折率導波路層とを有し、
前記高屈折率導波路層をパターニングし、それにより、受動フォトニック構造を含んだ、パターニングされた高屈折率導波路層を生成し、
酸化物層を堆積して平坦化することによって、前記パターニングされた高屈折率導波路層を含む前記第1のウエハー上の前記第1のレイヤスタックを平坦化し、前記平坦化された酸化物層は、前記高屈折率導波路層の上で300ナノメートル未満の厚さを有し、
前記酸化物層を平坦化することの前及び/又は後に、前記パターニングされた高屈折率導波路層をアニールし、それにより、アニールされたパターニングされた高屈折率導波路層を生成し、
第2のウエハー上に第2のレイヤスタックを製造し、前記第2のレイヤスタックは、剥離可能な単結晶シリコン導波路層を有し、
前記第2のレイヤスタックを有する前記第2のウエハーを、前記第1のレイヤスタックを有する前記第1のウエハーの上に移動し、且つ前記第1のレイヤスタックと前記第2のレイヤスタックとを接合し、
前記第2のウエハーの基板を除去し、
前記単結晶シリコン導波路層内に能動フォトニックデバイスを製造し、それにより、能動フォトニックデバイスを有する単結晶シリコン導波路層を生成し、且つ
前記能動フォトニックデバイスを有する単結晶シリコン導波路層と、前記アニールされたパターニングされた高屈折率導波路層との間に、エバネセント結合を実現する
ことを有する、フォトニック回路を製造する方法。 - 前記高屈折率導波路層は1.8と2.5との間の屈折率を有する、請求項1に記載のフォトニック回路を製造する方法。
- 前記高屈折率導波路層は、窒化シリコン、酸窒化シリコン、炭化シリコン、五酸化タンタル、又は二酸化テルルからなる、請求項2に記載のフォトニック回路を製造する方法。
- 前記高屈折率導波路層は、低圧化学気相成長すなわちLPCVDにより製造された窒化シリコン層である、請求項1に記載のフォトニック回路を製造する方法。
- 前記第2のウエハーはIV族材料からなる、請求項1に記載のフォトニック回路を製造する方法。
- 前記単結晶シリコン導波路層は、SOITEC SMARTCUT技術を用いて製造され、あるいは、前記単結晶シリコン導波路層は、前記第2のウエハー内の注入誘起損傷層の上に製造される、請求項1に記載のフォトニック回路を製造する方法。
- 前記平坦化された酸化物層は、前記高屈折率導波路層の直上で200ナノメートル未満の厚さを有する、請求項1に記載のフォトニック回路を製造する方法。
- 前記下部クラッド酸化物層は、1.5未満の屈折率の材料を1.5ミクロン以上の厚さで有する二酸化シリコン層の熱成長又は堆積によって製造される、請求項1に記載のフォトニック回路を製造する方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP12176431.0 | 2012-07-13 | ||
EP12176431.0A EP2685297B1 (en) | 2012-07-13 | 2012-07-13 | A process for manufacturing a photonic circuit with active and passive structures |
PCT/EP2013/055158 WO2014009029A1 (en) | 2012-07-13 | 2013-03-13 | A process for manufacturing a photonic circuit with active and passive structures |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015527608A JP2015527608A (ja) | 2015-09-17 |
JP6154465B2 true JP6154465B2 (ja) | 2017-06-28 |
Family
ID=47884328
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015520854A Active JP6154465B2 (ja) | 2012-07-13 | 2013-03-13 | 能動及び受動構造を備えたフォトニック回路を製造する方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9799791B2 (ja) |
EP (1) | EP2685297B1 (ja) |
JP (1) | JP6154465B2 (ja) |
CN (1) | CN104335088B (ja) |
WO (1) | WO2014009029A1 (ja) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10366883B2 (en) | 2014-07-30 | 2019-07-30 | Hewlett Packard Enterprise Development Lp | Hybrid multilayer device |
EP3015887A1 (en) * | 2014-10-28 | 2016-05-04 | Huawei Technologies Co., Ltd. | Polarization splitter and rotator device |
EP3035092B1 (en) * | 2014-12-16 | 2020-05-20 | IMEC vzw | Integrated semiconductor optical coupler. |
US20160337727A1 (en) * | 2015-05-12 | 2016-11-17 | Huawei Technologies Co., Ltd. | System and Method for Photonic Structure and Switch |
US10658177B2 (en) | 2015-09-03 | 2020-05-19 | Hewlett Packard Enterprise Development Lp | Defect-free heterogeneous substrates |
EP3153899A1 (en) | 2015-10-09 | 2017-04-12 | Caliopa NV | Optical coupling scheme |
US10586847B2 (en) | 2016-01-15 | 2020-03-10 | Hewlett Packard Enterprise Development Lp | Multilayer device |
US9933570B2 (en) | 2016-03-01 | 2018-04-03 | Futurewei Technologies, Inc. | Integration of V-grooves on silicon-on-insulator (SOI) platform for direct fiber coupling |
WO2017171737A1 (en) | 2016-03-30 | 2017-10-05 | Hewlett Packard Enterprise Development Lp | Devices having substrates with selective airgap regions |
US10079471B2 (en) * | 2016-07-08 | 2018-09-18 | Hewlett Packard Enterprise Development Lp | Bonding interface layer |
FR3054927B1 (fr) * | 2016-08-04 | 2018-07-13 | Soitec | Procede de fabrication d'une structure de semi-conducteur |
EP3385762A1 (en) * | 2017-04-03 | 2018-10-10 | Indigo Diabetes N.V. | Optical assembly with hermetically sealed cover cap |
US10775559B2 (en) * | 2018-01-26 | 2020-09-15 | Analog Photonics LLC | Photonics fabrication process performance improvement |
US10381801B1 (en) | 2018-04-26 | 2019-08-13 | Hewlett Packard Enterprise Development Lp | Device including structure over airgap |
US10746923B2 (en) * | 2018-06-27 | 2020-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photonic semiconductor device and method |
US10468849B1 (en) * | 2018-11-30 | 2019-11-05 | Mcmaster University | Hybrid optical waveguides of tellurium-oxide-coated silicon nitride and methods of fabrication thereof |
CN109686658B (zh) * | 2018-12-13 | 2021-03-09 | 中国科学院微电子研究所 | 半导体器件与其制作方法 |
GB2580092B (en) * | 2018-12-21 | 2022-11-16 | Univ Southampton | Photonic chip and method of manufacture |
FR3098983A1 (fr) * | 2019-07-19 | 2021-01-22 | Stmicroelectronics (Crolles 2) Sas | Guide d'onde d'une structure SOI |
CN111229338B (zh) * | 2020-01-17 | 2021-11-30 | 上海新微技术研发中心有限公司 | 基于cmos图像传感的光波导微流体芯片的制造方法 |
US11256114B2 (en) | 2020-02-11 | 2022-02-22 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor device and method of making |
US11525957B2 (en) * | 2020-03-31 | 2022-12-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fabrication process control in optical devices |
FR3115412B1 (fr) * | 2020-10-16 | 2023-01-06 | Scintil Photonics | Dispositif photonique avec dissipation thermique amelioree pour laser heterogene iii-v/si et procede de fabrication associe |
CN112635492B (zh) * | 2020-12-02 | 2023-04-07 | 广东省大湾区集成电路与系统应用研究院 | 一种应变GeSiOI衬底及其制作方法 |
CN116615331A (zh) * | 2020-12-18 | 2023-08-18 | 3M创新有限公司 | 结构化膜和包括结构化膜的光学制品 |
CN112510059B (zh) * | 2021-02-01 | 2021-10-01 | 北京与光科技有限公司 | 光谱芯片的制备方法和光谱芯片 |
US20240153985A1 (en) * | 2021-02-01 | 2024-05-09 | Beijing Seetrum Technology Co., Ltd. | Manufacturing method for optical device, and optical device |
US20230044331A1 (en) * | 2021-08-09 | 2023-02-09 | Intel Corporation | Multi-layered hybrid integrated circuit assembly |
FR3127049A1 (fr) * | 2021-09-14 | 2023-03-17 | Commissariat à l'Energie Atomique et aux Energies Alternatives | procede de fabrication d’un systeme optoélectronique en photonique sur silicium comportant un dispositif optique couplé à un circuit photonique integré |
US20230129131A1 (en) * | 2021-10-25 | 2023-04-27 | Soitec | Method for manufacturing a semiconductor structure |
FR3131014A1 (fr) * | 2021-12-17 | 2023-06-23 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Procédé de fabrication d’une puce photonique |
CN114400236B (zh) * | 2022-01-16 | 2024-04-26 | Nano科技(北京)有限公司 | 集成硅光调制器和锗硅探测器的硅光集成芯片及制备方法 |
WO2023243018A1 (ja) * | 2022-06-15 | 2023-12-21 | 日本電信電話株式会社 | シリコンフォトニクス回路及びシリコンフォトニクス回路の製造方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9710062D0 (en) * | 1997-05-16 | 1997-07-09 | British Tech Group | Optical devices and methods of fabrication thereof |
FR2792734A1 (fr) | 1999-04-23 | 2000-10-27 | Centre Nat Rech Scient | Circuit photonique integre comprenant un composant optique resonant et procedes de fabrication de ce circuit |
KR100762387B1 (ko) * | 1999-07-16 | 2007-10-02 | 하이마이트 에이/에스 | Si-기판 상의 능동 및 수동 광학 소자들의 하이브리드 집적 |
FR2797713B1 (fr) | 1999-08-20 | 2002-08-02 | Soitec Silicon On Insulator | Procede de traitement de substrats pour la microelectronique et substrats obtenus par ce procede |
US7087179B2 (en) * | 2000-12-11 | 2006-08-08 | Applied Materials, Inc. | Optical integrated circuits (ICs) |
US20020181822A1 (en) * | 2001-05-10 | 2002-12-05 | Agere Systems Inc. | Reduced power consumption thermo-optic devices |
JP2003095798A (ja) * | 2001-09-27 | 2003-04-03 | Hoya Corp | 単結晶基板の製造方法 |
US6897498B2 (en) * | 2003-03-31 | 2005-05-24 | Sioptical, Inc. | Polycrystalline germanium-based waveguide detector integrated on a thin silicon-on-insulator (SOI) platform |
US7203387B2 (en) * | 2003-09-10 | 2007-04-10 | Agency For Science, Technology And Research | VLSI-photonic heterogeneous integration by wafer bonding |
FR2871291B1 (fr) | 2004-06-02 | 2006-12-08 | Tracit Technologies | Procede de transfert de plaques |
US7801406B2 (en) * | 2005-08-01 | 2010-09-21 | Massachusetts Institute Of Technology | Method of fabricating Ge or SiGe/Si waveguide or photonic crystal structures by selective growth |
JP2007052328A (ja) * | 2005-08-19 | 2007-03-01 | Ricoh Co Ltd | 複合光導波路 |
US8106379B2 (en) * | 2006-04-26 | 2012-01-31 | The Regents Of The University Of California | Hybrid silicon evanescent photodetectors |
US7515793B2 (en) * | 2006-02-15 | 2009-04-07 | International Business Machines Corporation | Waveguide photodetector |
FR2912552B1 (fr) * | 2007-02-14 | 2009-05-22 | Soitec Silicon On Insulator | Structure multicouche et son procede de fabrication. |
US8111729B2 (en) * | 2008-03-25 | 2012-02-07 | Intel Corporation | Multi-wavelength hybrid silicon laser array |
EP2214042B1 (en) * | 2009-02-02 | 2015-03-11 | Commissariat à l'Énergie Atomique et aux Énergies Alternatives | Method of producing a photonic device and corresponding photonic device |
DE102009013112A1 (de) * | 2009-03-13 | 2010-09-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung einer Vielzahl von mikrooptoelektronischen Bauelementen und mikrooptoelektronisches Bauelement |
US8450186B2 (en) * | 2009-09-25 | 2013-05-28 | Intel Corporation | Optical modulator utilizing wafer bonding technology |
WO2012008272A1 (ja) * | 2010-07-16 | 2012-01-19 | 日本電気株式会社 | 受光素子及びそれを備えた光通信デバイス、並びに受光素子の製造方法及び光通信デバイスの製造方法 |
-
2012
- 2012-07-13 EP EP12176431.0A patent/EP2685297B1/en active Active
-
2013
- 2013-03-13 CN CN201380029344.9A patent/CN104335088B/zh active Active
- 2013-03-13 WO PCT/EP2013/055158 patent/WO2014009029A1/en active Application Filing
- 2013-03-13 JP JP2015520854A patent/JP6154465B2/ja active Active
-
2015
- 2015-01-13 US US14/595,663 patent/US9799791B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN104335088B (zh) | 2017-11-17 |
EP2685297A1 (en) | 2014-01-15 |
US9799791B2 (en) | 2017-10-24 |
WO2014009029A1 (en) | 2014-01-16 |
EP2685297B1 (en) | 2017-12-06 |
US20150140720A1 (en) | 2015-05-21 |
JP2015527608A (ja) | 2015-09-17 |
CN104335088A (zh) | 2015-02-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6154465B2 (ja) | 能動及び受動構造を備えたフォトニック回路を製造する方法 | |
CN108292012B (zh) | 光耦合方案 | |
US10107961B2 (en) | Vertical integration of hybrid waveguide with controlled interlayer thickness | |
JP5969811B2 (ja) | シリコン・フォトニクスプラットフォーム上でのフォトニックデバイスの共集積化方法 | |
US10571629B1 (en) | Waveguide for an integrated photonic device | |
WO2017096183A1 (en) | High refractive index waveguides and method of fabrication | |
US9791621B2 (en) | Integrated semiconductor optical coupler | |
US20220043211A1 (en) | Co-Manufacturing of Silicon-on-Insulator Waveguides and Silicon Nitride Waveguides for Hybrid Photonic Integrated Circuits | |
US10935722B1 (en) | CMOS compatible material platform for photonic integrated circuits | |
EP2648025A1 (en) | A process for manufacturing a photonic circuit | |
Moradinejad et al. | Double-layer crystalline silicon on insulator material platform for integrated photonic applications | |
JP6560153B2 (ja) | 光モジュールおよびその製造方法 | |
US9568672B2 (en) | Optical coupling system and method for fabricating the same | |
CN114400504A (zh) | 一种低损耗氮化硅波导的制备方法 | |
Malhouitre et al. | Heterogeneous and multi-level integration on mature 25Gb/s silicon photonic platform | |
Jalali | Silicon-on-insulator photonic integrated circuit (SOI-PIC) technology | |
CN102116900B (zh) | 一种plc光器件的制造方法 | |
JP3694630B2 (ja) | 光電気回路基板 | |
CN102540334A (zh) | 一种plc光器件的制造方法 | |
JP5882931B2 (ja) | 多層光導波路構造の製造方法 | |
TW200839330A (en) | Low-loss optical device structure | |
Pello et al. | Post-bonding fabrication of photonic devices in an Indium phosphide membrane bonded on glass | |
Zhu et al. | Back-end integration of multilayer photonics on silicon | |
Li et al. | Silicon photonics technology on 200mm CMOS platform for high-integration applications | |
Li et al. | Modeling and fabrication of Ge-on-Si 3 N 4 for low bend-loss waveguides |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20151224 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160105 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160401 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160920 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161220 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170509 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170601 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6154465 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |