JP6148796B2 - ペリクルマウント装置 - Google Patents
ペリクルマウント装置 Download PDFInfo
- Publication number
- JP6148796B2 JP6148796B2 JP2016523452A JP2016523452A JP6148796B2 JP 6148796 B2 JP6148796 B2 JP 6148796B2 JP 2016523452 A JP2016523452 A JP 2016523452A JP 2016523452 A JP2016523452 A JP 2016523452A JP 6148796 B2 JP6148796 B2 JP 6148796B2
- Authority
- JP
- Japan
- Prior art keywords
- pellicle
- original plate
- bonding
- pellicle frame
- original
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000002093 peripheral effect Effects 0.000 claims description 67
- 238000004891 communication Methods 0.000 claims description 44
- 238000005259 measurement Methods 0.000 claims description 41
- 238000007689 inspection Methods 0.000 claims description 13
- 239000006185 dispersion Substances 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims description 7
- 230000013011 mating Effects 0.000 claims 1
- 239000002243 precursor Substances 0.000 claims 1
- 238000011179 visual inspection Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 39
- 239000007789 gas Substances 0.000 description 37
- 230000004048 modification Effects 0.000 description 27
- 238000012986 modification Methods 0.000 description 27
- 239000000853 adhesive Substances 0.000 description 25
- 230000001070 adhesive effect Effects 0.000 description 25
- 239000012790 adhesive layer Substances 0.000 description 24
- 239000010410 layer Substances 0.000 description 24
- 239000000463 material Substances 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 230000003287 optical effect Effects 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 18
- 230000007246 mechanism Effects 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 11
- 238000012937 correction Methods 0.000 description 9
- 238000005286 illumination Methods 0.000 description 9
- 239000006096 absorbing agent Substances 0.000 description 8
- 229910010272 inorganic material Inorganic materials 0.000 description 8
- 239000011147 inorganic material Substances 0.000 description 8
- 238000003825 pressing Methods 0.000 description 8
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 229920002050 silicone resin Polymers 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910000676 Si alloy Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 229910000975 Carbon steel Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- 229910001315 Tool steel Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000010962 carbon steel Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000805 composite resin Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014109482 | 2014-05-27 | ||
| JP2014109482 | 2014-05-27 | ||
| PCT/JP2015/064620 WO2015182482A1 (ja) | 2014-05-27 | 2015-05-21 | ペリクルマウント装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2015182482A1 JPWO2015182482A1 (ja) | 2017-04-20 |
| JP6148796B2 true JP6148796B2 (ja) | 2017-06-14 |
Family
ID=54698817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016523452A Active JP6148796B2 (ja) | 2014-05-27 | 2015-05-21 | ペリクルマウント装置 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6148796B2 (zh) |
| TW (1) | TWI656399B (zh) |
| WO (1) | WO2015182482A1 (zh) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20180118681A (ko) * | 2016-02-19 | 2018-10-31 | 에어 워터 가부시키가이샤 | 화합물 반도체 기판, 펠리클막, 및 화합물 반도체 기판의 제조 방법 |
| CN108699687B (zh) * | 2016-02-19 | 2022-03-01 | 爱沃特株式会社 | 化合物半导体基板、表膜、和化合物半导体基板的制造方法 |
| WO2017179199A1 (ja) * | 2016-04-15 | 2017-10-19 | 凸版印刷株式会社 | ペリクル |
| TWI779505B (zh) * | 2020-05-14 | 2022-10-01 | 台灣積體電路製造股份有限公司 | 光罩盒及防止光罩污染之方法 |
| US11703754B2 (en) | 2020-05-14 | 2023-07-18 | Taiwan Semiconductor Manufacturing Company Ltd. | Particle prevention method in reticle pod |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5422704A (en) * | 1992-07-13 | 1995-06-06 | Intel Corporation | Pellicle frame |
| US6731378B2 (en) * | 2002-02-11 | 2004-05-04 | International Business Machines Corporation | Pellicle distortion reduction |
| JP2004240221A (ja) * | 2003-02-06 | 2004-08-26 | Semiconductor Leading Edge Technologies Inc | フォトマスク、ペリクル装脱着装置及び基板処理装置 |
| JP2005070191A (ja) * | 2003-08-21 | 2005-03-17 | Asahi Glass Co Ltd | フレームとペリクル板の貼り合せ装置 |
| JP2006215487A (ja) * | 2005-02-07 | 2006-08-17 | Tekkusu Iijii:Kk | ペリクル |
| JP4608638B2 (ja) * | 2005-06-28 | 2011-01-12 | レーザーテック株式会社 | ペリクル装着装置、ペリクル装着方法及びパターン基板の製造方法 |
| US8268514B2 (en) * | 2009-01-26 | 2012-09-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pellicle mounting method and apparatus |
| JP5478463B2 (ja) * | 2010-11-17 | 2014-04-23 | 信越化学工業株式会社 | リソグラフィー用ペリクル |
-
2015
- 2015-05-21 JP JP2016523452A patent/JP6148796B2/ja active Active
- 2015-05-21 WO PCT/JP2015/064620 patent/WO2015182482A1/ja active Application Filing
- 2015-05-22 TW TW104116495A patent/TWI656399B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2015182482A1 (ja) | 2015-12-03 |
| TW201600924A (zh) | 2016-01-01 |
| TWI656399B (zh) | 2019-04-11 |
| JPWO2015182482A1 (ja) | 2017-04-20 |
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