JP6147514B2 - マスクブランク用基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、および転写用マスクの製造方法 - Google Patents
マスクブランク用基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、および転写用マスクの製造方法 Download PDFInfo
- Publication number
- JP6147514B2 JP6147514B2 JP2013017130A JP2013017130A JP6147514B2 JP 6147514 B2 JP6147514 B2 JP 6147514B2 JP 2013017130 A JP2013017130 A JP 2013017130A JP 2013017130 A JP2013017130 A JP 2013017130A JP 6147514 B2 JP6147514 B2 JP 6147514B2
- Authority
- JP
- Japan
- Prior art keywords
- mask blank
- substrate
- main surface
- catalyst
- local processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 399
- 238000004519 manufacturing process Methods 0.000 title claims description 102
- 238000000034 method Methods 0.000 title claims description 97
- 238000012546 transfer Methods 0.000 title claims description 30
- 230000007547 defect Effects 0.000 claims description 251
- 238000012545 processing Methods 0.000 claims description 215
- 239000003054 catalyst Substances 0.000 claims description 180
- 239000010408 film Substances 0.000 claims description 110
- 239000011521 glass Substances 0.000 claims description 105
- 238000005530 etching Methods 0.000 claims description 59
- 239000007788 liquid Substances 0.000 claims description 59
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 23
- 238000002360 preparation method Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 11
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 230000003197 catalytic effect Effects 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 230000002950 deficient Effects 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052723 transition metal Inorganic materials 0.000 claims description 3
- 150000003624 transition metals Chemical class 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 238000007689 inspection Methods 0.000 description 51
- 238000005498 polishing Methods 0.000 description 44
- 206010040925 Skin striae Diseases 0.000 description 41
- 230000002093 peripheral effect Effects 0.000 description 25
- 230000033001 locomotion Effects 0.000 description 19
- 230000001681 protective effect Effects 0.000 description 18
- 238000003754 machining Methods 0.000 description 16
- 238000007517 polishing process Methods 0.000 description 15
- 230000003746 surface roughness Effects 0.000 description 13
- 230000010363 phase shift Effects 0.000 description 12
- 238000003672 processing method Methods 0.000 description 12
- 239000007789 gas Substances 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 8
- 238000012937 correction Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 239000002002 slurry Substances 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000006096 absorbing agent Substances 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 229910010413 TiO 2 Inorganic materials 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 239000002585 base Substances 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
- 239000006061 abrasive grain Substances 0.000 description 5
- 239000008119 colloidal silica Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910000420 cerium oxide Inorganic materials 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000007710 freezing Methods 0.000 description 4
- 230000008014 freezing Effects 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 4
- 238000005546 reactive sputtering Methods 0.000 description 4
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 3
- XTDAIYZKROTZLD-UHFFFAOYSA-N boranylidynetantalum Chemical compound [Ta]#B XTDAIYZKROTZLD-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000001659 ion-beam spectroscopy Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229920001973 fluoroelastomer Polymers 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000011553 magnetic fluid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 125000006414 CCl Chemical group ClC* 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229920002449 FKM Polymers 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000039 hydrogen halide Inorganic materials 0.000 description 1
- 239000012433 hydrogen halide Substances 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000011949 solid catalyst Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Surface Treatment Of Glass (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013017130A JP6147514B2 (ja) | 2013-01-31 | 2013-01-31 | マスクブランク用基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、および転写用マスクの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013017130A JP6147514B2 (ja) | 2013-01-31 | 2013-01-31 | マスクブランク用基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、および転写用マスクの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014150124A JP2014150124A (ja) | 2014-08-21 |
| JP2014150124A5 JP2014150124A5 (ko) | 2016-02-12 |
| JP6147514B2 true JP6147514B2 (ja) | 2017-06-14 |
Family
ID=51572890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013017130A Active JP6147514B2 (ja) | 2013-01-31 | 2013-01-31 | マスクブランク用基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、および転写用マスクの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6147514B2 (ko) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6202888B2 (ja) * | 2013-06-05 | 2017-09-27 | キヤノン株式会社 | 光学素子の製造方法 |
| DE102014217907B4 (de) * | 2014-09-08 | 2018-12-20 | Carl Zeiss Smt Gmbh | Verfahren zum Herstellen einer Maske für den extrem ultra-violetten Wellenlängenbereich und Maske |
| KR102519334B1 (ko) * | 2014-12-19 | 2023-04-07 | 호야 가부시키가이샤 | 마스크 블랭크용 기판, 마스크 블랭크 및 이들의 제조 방법, 전사용 마스크의 제조 방법 그리고 반도체 디바이스의 제조 방법 |
| JP6499440B2 (ja) | 2014-12-24 | 2019-04-10 | Hoya株式会社 | 反射型マスクブランク及び反射型マスク |
| JP6372007B2 (ja) * | 2015-02-03 | 2018-08-15 | Ａｇｃ株式会社 | マスクブランク用ガラス基板 |
| JP6565471B2 (ja) * | 2015-08-19 | 2019-08-28 | Ａｇｃ株式会社 | マスクブランクス用ガラス基板 |
| JP6618843B2 (ja) * | 2016-03-24 | 2019-12-11 | Hoya株式会社 | フォトマスク用基板のリサイクル方法、フォトマスク用基板の製造方法、フォトマスクブランクの製造方法、フォトマスクの製造方法、及びパターン転写方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4508779B2 (ja) * | 2004-08-23 | 2010-07-21 | Ｈｏｙａ株式会社 | マスクブランク用基板の製造方法、マスクブランクの製造方法、及び露光用マスクの製造方法 |
| JP5327046B2 (ja) * | 2007-04-17 | 2013-10-30 | 旭硝子株式会社 | Ｅｕｖマスクブランク |
| JP5402391B2 (ja) * | 2009-01-27 | 2014-01-29 | 信越化学工業株式会社 | 半導体用合成石英ガラス基板の加工方法 |
| JP5552648B2 (ja) * | 2009-12-15 | 2014-07-16 | 国立大学法人大阪大学 | 研磨方法及び研磨装置 |
| CN101880907B (zh) * | 2010-07-07 | 2012-04-25 | 厦门大学 | 纳米精度的电化学整平和抛光加工方法及其装置 |
-
2013
- 2013-01-31 JP JP2013017130A patent/JP6147514B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014150124A (ja) | 2014-08-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6147514B2 (ja) | マスクブランク用基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、および転写用マスクの製造方法 | |
| JP5712336B2 (ja) | マスクブランク用基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク、マスクブランク用基板の製造方法及び多層反射膜付き基板の製造方法並びに半導体装置の製造方法 | |
| JP4219718B2 (ja) | Ｅｕｖマスクブランクス用ガラス基板の製造方法及びｅｕｖマスクブランクスの製造方法 | |
| JP6279476B2 (ja) | 多層反射膜付き基板の製造方法 | |
| US20150370160A1 (en) | Mask blank substrate processing device, mask blank substrate processing method, mask blank substrate fabrication method, mask blank fabrication method, and transfer mask fabrication method | |
| TWI609234B (zh) | 光罩基底用基板之製造方法、光罩基底之製造方法及轉印用光罩之製造方法 | |
| JP2014199847A (ja) | Ｅｕｖリソグラフィー用マスクブランク用基板の製造方法、ｅｕｖリソグラフィー用多層反射膜付き基板の製造方法、ｅｕｖリソグラフィー用マスクブランクの製造方法、及びｅｕｖリソグラフィー用転写マスクの製造方法 | |
| JP6444680B2 (ja) | 基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、及び転写用マスクの製造方法 | |
| JP6400370B2 (ja) | 基板の製造方法、マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び基板製造装置 | |
| JP6873758B2 (ja) | 基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、及び転写用マスクの製造方法 | |
| JP6161913B2 (ja) | マスクブランク用基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、および転写用マスクの製造方法 | |
| JP6297512B2 (ja) | マスクブランク用基板の製造方法、多層膜付き基板の製造方法、マスクブランクの製造方法、及び転写用マスクの製造方法 | |
| JP6133189B2 (ja) | 基板の製造方法、多層膜付き基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び基板製造装置 | |
| JP6367417B2 (ja) | マスクブランク用基板の製造方法、多層膜付き基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及びマスクブランク用基板製造装置 | |
| JP6803186B2 (ja) | マスクブランク用基板、多層反射膜付き基板、マスクブランク、転写用マスク及び半導体デバイスの製造方法 | |
| JP6297321B2 (ja) | 機能膜付き基板の製造方法、多層膜付き基板の製造方法、マスクブランクの製造方法、及び転写用マスクの製造方法 | |
| JP6577071B2 (ja) | 基板の製造方法、マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び基板製造装置 | |
| JP2015028627A (ja) | 基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び基板加工装置 | |
| JP6400360B2 (ja) | 基板の製造方法、マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び基板製造装置 | |
| JP6534507B2 (ja) | 基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び基板加工装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151221 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20151221 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160914 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161004 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161202 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170509 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170517 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6147514 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |