JP6126509B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6126509B2
JP6126509B2 JP2013208710A JP2013208710A JP6126509B2 JP 6126509 B2 JP6126509 B2 JP 6126509B2 JP 2013208710 A JP2013208710 A JP 2013208710A JP 2013208710 A JP2013208710 A JP 2013208710A JP 6126509 B2 JP6126509 B2 JP 6126509B2
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Japan
Prior art keywords
layer
transistor
oxide
semiconductor
film
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Expired - Fee Related
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JP2013208710A
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Japanese (ja)
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JP2015073039A5 (OSRAM
JP2015073039A (ja
Inventor
健輔 吉住
健輔 吉住
哲弘 田中
哲弘 田中
亮 徳丸
亮 徳丸
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2013208710A priority Critical patent/JP6126509B2/ja
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Publication of JP2015073039A5 publication Critical patent/JP2015073039A5/ja
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  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
JP2013208710A 2013-10-04 2013-10-04 半導体装置 Expired - Fee Related JP6126509B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013208710A JP6126509B2 (ja) 2013-10-04 2013-10-04 半導体装置

Applications Claiming Priority (1)

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JP2013208710A JP6126509B2 (ja) 2013-10-04 2013-10-04 半導体装置

Related Child Applications (1)

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JP2017076453A Division JP6386126B2 (ja) 2017-04-07 2017-04-07 半導体装置

Publications (3)

Publication Number Publication Date
JP2015073039A JP2015073039A (ja) 2015-04-16
JP2015073039A5 JP2015073039A5 (OSRAM) 2016-08-18
JP6126509B2 true JP6126509B2 (ja) 2017-05-10

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ID=53015206

Family Applications (1)

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JP2013208710A Expired - Fee Related JP6126509B2 (ja) 2013-10-04 2013-10-04 半導体装置

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JP (1) JP6126509B2 (OSRAM)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12278291B2 (en) 2018-12-07 2025-04-15 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor array having a stacked multi-layer metal oxide channel formation region
JP7259944B2 (ja) 2019-04-25 2023-04-18 株式会社ソシオネクスト 半導体装置
CN113767466B (zh) 2019-04-25 2024-08-02 株式会社索思未来 半导体装置
WO2024084366A1 (ja) * 2022-10-21 2024-04-25 株式会社半導体エネルギー研究所 半導体装置、及び、記憶装置
JPWO2024095108A1 (OSRAM) * 2022-11-03 2024-05-10
WO2025149872A1 (ja) * 2024-01-12 2025-07-17 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006128494A (ja) * 2004-10-29 2006-05-18 Toshiba Corp 半導体集積回路装置及びその製造方法
TWI582999B (zh) * 2011-03-25 2017-05-11 半導體能源研究所股份有限公司 場效電晶體及包含該場效電晶體之記憶體與半導體電路
JP6116149B2 (ja) * 2011-08-24 2017-04-19 株式会社半導体エネルギー研究所 半導体装置

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Publication number Publication date
JP2015073039A (ja) 2015-04-16

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