JP6124521B2 - パワーモジュール用基板の製造方法 - Google Patents
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- JP6124521B2 JP6124521B2 JP2012149274A JP2012149274A JP6124521B2 JP 6124521 B2 JP6124521 B2 JP 6124521B2 JP 2012149274 A JP2012149274 A JP 2012149274A JP 2012149274 A JP2012149274 A JP 2012149274A JP 6124521 B2 JP6124521 B2 JP 6124521B2
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- 239000000758 substrate Substances 0.000 title claims description 167
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 133
- 239000010949 copper Substances 0.000 claims description 133
- 229910052802 copper Inorganic materials 0.000 claims description 133
- 239000000919 ceramic Substances 0.000 claims description 75
- 239000004065 semiconductor Substances 0.000 claims description 75
- 238000005530 etching Methods 0.000 claims description 55
- 239000000463 material Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 16
- 238000005219 brazing Methods 0.000 claims description 14
- 230000017525 heat dissipation Effects 0.000 claims description 13
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 10
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 description 13
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 9
- 230000004907 flux Effects 0.000 description 7
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 6
- 238000005304 joining Methods 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000000292 calcium oxide Substances 0.000 description 3
- 235000012255 calcium oxide Nutrition 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- 239000004014 plasticizer Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910002480 Cu-O Inorganic materials 0.000 description 1
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
(1)特開平10−242330号公報や、特開平10−242331号公報で開示されるようなパワーモジュール用基板は、半導体素子を半導体素子搭載部に位置決めよく搭載させることができるものの、半導体素子接合時の接合材である半田ペースト中のフラックスが液化して濡れ広がることで流れ出た半田によって、半導体素子の接合される位置がずれるようになっている。また、このパワーモジュール用基板は、半導体素子接合時の接合材である半田ペースト中のフラックスが液化して濡れ広がることで流れ出た半田が土手で遮られるので、土手を越えての流れ出しを防止することができるものの、流れ出た半田が土手枠内で溢れて半導体素子の上面にまで達することがあり、半導体素子の不具合を発生させることとなっている。
(2)特開2004−119568号公報で開示されるようなパワーモジュール用基板は、半導体素子を半導体素子搭載部に位置決めよく搭載させることができるものの、半導体素子の外周縁が枠状の溝の内周と外周との間に位置しているので、溝内に流れ込んだ接合材が半導体素子の上面に達することがあり、半導体素子の不具合を発生させることとなっている。
(3)特開平10−242330号公報、特開平10−242331号公報、特開2004−119568号公報で開示されるようなパワーモジュール用基板の製造方法は、回路銅板を形成した後に、土手や、溝をエッチングや、切削等で形成しているので、作製が複雑で難しいと共に、作製に時間が掛かり、パワーモジュール用基板のコストアップとなっている。
図1(A)〜(C)、図2を参照しながら、本発明の一実施の形態に係るパワーモジュール用基板を説明する。ここに、図1(A)は、パワーモジュール用基板の複数個が集合するパワーモジュール用基板集合体の斜視図である。図1(B)は、図1(A)におけるA−A’線縦断面図である。図1(C)は、パワーモジュール用基板の斜視図である。図2は、パワーモジュール用基板に半導体素子を実装するときの断面視する説明図である。
なお、このパワーモジュール用基板10の製造方法には、予め作製された個片体のセラミック基板11に形成するパワーモジュール用基板10として形成する場合と、大型のセラミック基板11aに複数個の個片体のパワーモジュール用基板10が配列するパワーモジュール用基板集合体30として形成する場合があるが、ここでは、パワーモジュール用基板10がパワーモジュール用基板集合体30として形成される場合についての製造方法で説明する。そして、図3(A)〜(E)は、パワーモジュール用基板10が大型のセラミック基板11aに複数個が配列して集合するパワーモジュール用基板集合体30として作製される場合の断面図である。
Claims (2)
- セラミック基板の両主面のそれぞれに銅板を載置し加熱接合した後、前記銅板をエッチングして一方の主面に半導体素子を搭載して電気的導通状態を形成するための回路銅板と、他方の主面に前記半導体素子から発生する熱を放熱させるための放熱銅板を設けるパワーモジュール用基板の製造方法において、
前記セラミック基板の両主面のそれぞれに加熱接合した前記銅板の、前記回路銅板形成用の前記銅板に所望する凹み状パターン用パターンを開口とし、所望する前記回路銅板用パターンからなる第1のエッチングレジストマスクと、前記放熱銅板形成用の前記銅板に所望する前記放熱銅板用パターンからなる第2のエッチングレジストマスクを形成する工程と、
前記第1、及び第2のエッチングレジストマスクから露出する前記銅板を、該銅板の厚みの途中までエッチングした後、前記第1のエッチングレジストマスクの前記凹み状パターン用パターンの前記開口から露出する前記銅板の有底穴部を塞ぐ第3のエッチングレジストマスクを形成する工程と、
前記第1、第2、及び第3のエッチングレジストマスクから露出する前記銅板を前記セラミック基板が外部に露出するまでエッチングした後、前記第1、第2、及び第3のエッチングレジストマスクを除去する工程と、を有することを特徴とするパワーモジュール用基板の製造方法。 - 請求項1記載のパワーモジュール用基板の製造方法において、前記セラミック基板が酸化アルミニウム、窒化アルミニウム、又はジルコニア入り酸化アルミニウムからなり、前記セラミック基板の両主面のそれぞれに前記銅板が直接接合、又は活性金属ろう材接合で加熱接合されることを特徴とするパワーモジュール用基板の製造方法。
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JP6706253B2 (ja) | 2015-05-27 | 2020-06-03 | Ngkエレクトロデバイス株式会社 | パワーモジュール用基板およびパワーモジュール用基板集合体およびパワーモジュール用基板の製造方法 |
WO2018135650A1 (ja) | 2017-01-19 | 2018-07-26 | 株式会社村田製作所 | 電子部品及び電子部品の製造方法 |
CN114899154B (zh) * | 2022-06-02 | 2023-05-30 | 江苏富乐华功率半导体研究院有限公司 | 一种高效率双面散热功率模块封装方法 |
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JPH05190508A (ja) * | 1992-01-14 | 1993-07-30 | Matsushita Electric Ind Co Ltd | 薄膜のエッチング方法および積層薄膜のエッチング方法 |
JPH05243287A (ja) * | 1992-02-27 | 1993-09-21 | Sanyo Electric Co Ltd | 混成集積回路装置およびその製造方法 |
JP2536431B2 (ja) * | 1993-09-30 | 1996-09-18 | 日本電気株式会社 | 半導体装置 |
JPH07202063A (ja) * | 1993-12-28 | 1995-08-04 | Toshiba Corp | セラミックス回路基板 |
JPH08279488A (ja) * | 1995-04-05 | 1996-10-22 | Sony Corp | 半導体装置の製造方法 |
JP2004119568A (ja) * | 2002-09-25 | 2004-04-15 | Kyocera Corp | セラミック回路基板 |
JP2011167780A (ja) * | 2010-02-17 | 2011-09-01 | Toppan Printing Co Ltd | パターン形成方法およびパターン形成体 |
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