JP6117746B2 - エッチング特性推定方法、プログラム、情報処理装置、加工装置、設計方法、および、製造方法 - Google Patents

エッチング特性推定方法、プログラム、情報処理装置、加工装置、設計方法、および、製造方法 Download PDF

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JP6117746B2
JP6117746B2 JP2014154811A JP2014154811A JP6117746B2 JP 6117746 B2 JP6117746 B2 JP 6117746B2 JP 2014154811 A JP2014154811 A JP 2014154811A JP 2014154811 A JP2014154811 A JP 2014154811A JP 6117746 B2 JP6117746 B2 JP 6117746B2
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flux
nitrogen
term
hydrogen
protective film
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JP2016032064A (ja
JP2016032064A5 (enExample
Inventor
信行 久保井
信行 久保井
辰巳　哲也
哲也 辰巳
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Priority to JP2014154811A priority Critical patent/JP6117746B2/ja
Priority to US15/327,731 priority patent/US10403516B2/en
Priority to PCT/JP2015/067141 priority patent/WO2016017303A1/ja
Publication of JP2016032064A publication Critical patent/JP2016032064A/ja
Publication of JP2016032064A5 publication Critical patent/JP2016032064A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B13/00—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion
    • G05B13/02—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric
    • G05B13/04—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric involving the use of models or simulators
    • G05B13/041—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric involving the use of models or simulators in which a variable is automatically adjusted to optimise the performance
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/36—Circuit design at the analogue level
    • G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Evolutionary Computation (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Medical Informatics (AREA)
  • Software Systems (AREA)
  • Automation & Control Theory (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Artificial Intelligence (AREA)
  • Health & Medical Sciences (AREA)
  • Drying Of Semiconductors (AREA)
JP2014154811A 2014-07-30 2014-07-30 エッチング特性推定方法、プログラム、情報処理装置、加工装置、設計方法、および、製造方法 Active JP6117746B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014154811A JP6117746B2 (ja) 2014-07-30 2014-07-30 エッチング特性推定方法、プログラム、情報処理装置、加工装置、設計方法、および、製造方法
US15/327,731 US10403516B2 (en) 2014-07-30 2015-06-15 Etching characteristic estimation method, program, information processing apparatus, processing apparatus, designing method, and production method
PCT/JP2015/067141 WO2016017303A1 (ja) 2014-07-30 2015-06-15 エッチング特性推定方法、プログラム、情報処理装置、加工装置、設計方法、および、製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014154811A JP6117746B2 (ja) 2014-07-30 2014-07-30 エッチング特性推定方法、プログラム、情報処理装置、加工装置、設計方法、および、製造方法

Publications (3)

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JP2016032064A JP2016032064A (ja) 2016-03-07
JP2016032064A5 JP2016032064A5 (enExample) 2016-04-14
JP6117746B2 true JP6117746B2 (ja) 2017-04-19

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US (1) US10403516B2 (enExample)
JP (1) JP6117746B2 (enExample)
WO (1) WO2016017303A1 (enExample)

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JP7166966B2 (ja) 2019-03-15 2022-11-08 株式会社Ｓｃｒｅｅｎホールディングス 処理条件選択方法、基板処理方法、基板製品製造方法、処理条件選択装置、コンピュータープログラム、および、記憶媒体
TW202509802A (zh) * 2023-03-30 2025-03-01 日商東京威力科創股份有限公司 電腦程式、資訊處理方法及資訊處理裝置
CN119148540B (zh) * 2024-11-15 2025-03-07 深圳市荣强科技有限公司 基于多层次因素的表面活性剂工艺参数分析方法及系统

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JP2008053507A (ja) * 2006-08-25 2008-03-06 Matsushita Electric Ind Co Ltd ドライエッチング方法
US9620338B2 (en) * 2010-03-16 2017-04-11 Mizuho Information & Research Institute, Inc. System, method, and program for predicting processing shape by plasma process
JP5732843B2 (ja) 2010-12-21 2015-06-10 ソニー株式会社 シミュレータ、加工装置、ダメージ評価方法、及び、ダメージ評価プログラム
JP5685762B2 (ja) * 2011-03-07 2015-03-18 みずほ情報総研株式会社 プラズマ加工形状シミュレーション装置及びプログラム
JP6065612B2 (ja) * 2012-06-28 2017-01-25 ソニー株式会社 シミュレーション方法、シミュレーションプログラム、加工装置およびシミュレータ

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JP2016032064A (ja) 2016-03-07
US10403516B2 (en) 2019-09-03
US20170207107A1 (en) 2017-07-20
WO2016017303A1 (ja) 2016-02-04

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