JP6109931B2 - 高電圧接合型電界効果トランジスタ - Google Patents

高電圧接合型電界効果トランジスタ Download PDF

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JP6109931B2
JP6109931B2 JP2015516426A JP2015516426A JP6109931B2 JP 6109931 B2 JP6109931 B2 JP 6109931B2 JP 2015516426 A JP2015516426 A JP 2015516426A JP 2015516426 A JP2015516426 A JP 2015516426A JP 6109931 B2 JP6109931 B2 JP 6109931B2
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conductivity type
region
high voltage
doped region
effect transistor
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JP2015523723A5 (enExample
JP2015523723A (ja
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グアンタオ ハン
グアンタオ ハン
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シーエスエムシー テクノロジーズ エフエイビー１ カンパニー リミテッド
シーエスエムシー テクノロジーズ エフエイビー１ カンパニー リミテッド
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Publication of JP2015523723A5 publication Critical patent/JP2015523723A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/328—Channel regions of field-effect devices of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2015516426A 2012-06-12 2013-06-10 高電圧接合型電界効果トランジスタ Active JP6109931B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201210192221.4A CN103489912B (zh) 2012-06-12 2012-06-12 一种高压结型场效应晶体管
CN201210192221.4 2012-06-12
PCT/CN2013/077119 WO2013185604A1 (zh) 2012-06-12 2013-06-10 一种高压结型场效应晶体管

Publications (3)

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JP2015523723A JP2015523723A (ja) 2015-08-13
JP2015523723A5 JP2015523723A5 (enExample) 2017-02-23
JP6109931B2 true JP6109931B2 (ja) 2017-04-05

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Application Number Title Priority Date Filing Date
JP2015516426A Active JP6109931B2 (ja) 2012-06-12 2013-06-10 高電圧接合型電界効果トランジスタ

Country Status (5)

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US (1) US9543451B2 (enExample)
EP (1) EP2860762B1 (enExample)
JP (1) JP6109931B2 (enExample)
CN (1) CN103489912B (enExample)
WO (1) WO2013185604A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9111992B2 (en) * 2011-09-13 2015-08-18 Globalfoundries Singapore Pte. Ltd. Semiconductor device including an n-well structure
US9299857B2 (en) * 2014-06-19 2016-03-29 Macronix International Co., Ltd. Semiconductor device
US10784372B2 (en) * 2015-04-03 2020-09-22 Magnachip Semiconductor, Ltd. Semiconductor device with high voltage field effect transistor and junction field effect transistor
KR101975630B1 (ko) * 2015-04-03 2019-08-29 매그나칩 반도체 유한회사 접합 트랜지스터와 고전압 트랜지스터 구조를 포함한 반도체 소자 및 그 제조 방법
US9543452B1 (en) * 2015-07-01 2017-01-10 Macronix International Co., Ltd. High voltage junction field effect transistor
US9583612B1 (en) * 2016-01-21 2017-02-28 Texas Instruments Incorporated Drift region implant self-aligned to field relief oxide with sidewall dielectric
CN108807379B (zh) * 2017-05-05 2021-08-27 立锜科技股份有限公司 具有可调整临界电压的高压耗尽型mos元件及其制造方法
US10361296B2 (en) 2017-06-29 2019-07-23 Monolith Semiconductor Inc. Metal oxide semiconductor (MOS) controlled devices and methods of making the same
TWI650866B (zh) * 2017-08-30 2019-02-11 立錡科技股份有限公司 高壓元件及其製造方法
CN109473427B (zh) * 2017-09-08 2020-06-30 立锜科技股份有限公司 高压元件及其制造方法
CN110350018B (zh) * 2018-04-02 2023-05-26 世界先进积体电路股份有限公司 半导体结构及其制造方法
US11289613B2 (en) 2019-10-16 2022-03-29 Semiconductor Components Industries, Llc Electronic device including a junction field-effect transistor
CN111180509B (zh) * 2019-12-31 2022-08-23 杰华特微电子股份有限公司 一种结型场效应管及其静电放电结构
CN113066854B (zh) * 2021-03-18 2023-02-03 电子科技大学 一种高压jfet器件及其制造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4314267A (en) * 1978-06-13 1982-02-02 Ibm Corporation Dense high performance JFET compatible with NPN transistor formation and merged BIFET
US4407005A (en) * 1980-01-21 1983-09-27 Texas Instruments Incorporated N-Channel JFET device having a buried channel region, and method for making same
JPS5889872A (ja) * 1981-11-24 1983-05-28 Hitachi Ltd 接合形電界効果半導体装置
US5910664A (en) * 1996-11-05 1999-06-08 International Rectifier Corporation Emitter-switched transistor structures
JPH10209175A (ja) * 1997-01-22 1998-08-07 Nikon Corp 接合型電界効果トランジスタ及びその製造方法
US6037238A (en) * 1999-01-04 2000-03-14 Vanguard International Semiconductor Corporation Process to reduce defect formation occurring during shallow trench isolation formation
US20050104132A1 (en) * 2001-01-23 2005-05-19 Tsutomu Imoto Semiconductor device and manufacturing method thereof
JP2004200391A (ja) * 2002-12-18 2004-07-15 Hitachi Ltd 半導体装置
US8207580B2 (en) 2009-05-29 2012-06-26 Power Integrations, Inc. Power integrated circuit device with incorporated sense FET
US8344472B2 (en) * 2010-03-30 2013-01-01 Freescale Semiconductor, Inc. Semiconductor device and method
CN101969072B (zh) * 2010-08-27 2013-01-02 东南大学 降压用耗尽型n型横向双扩散金属氧化物半导体晶体管
US8541862B2 (en) * 2011-11-30 2013-09-24 Freescale Semiconductor, Inc. Semiconductor device with self-biased isolation

Also Published As

Publication number Publication date
EP2860762B1 (en) 2019-10-23
EP2860762A1 (en) 2015-04-15
EP2860762A4 (en) 2016-02-17
JP2015523723A (ja) 2015-08-13
US9543451B2 (en) 2017-01-10
CN103489912B (zh) 2016-02-24
CN103489912A (zh) 2014-01-01
US20150137192A1 (en) 2015-05-21
WO2013185604A1 (zh) 2013-12-19

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