JP6099949B2 - 銅を含む電極連結構造体 - Google Patents
銅を含む電極連結構造体 Download PDFInfo
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- JP6099949B2 JP6099949B2 JP2012259541A JP2012259541A JP6099949B2 JP 6099949 B2 JP6099949 B2 JP 6099949B2 JP 2012259541 A JP2012259541 A JP 2012259541A JP 2012259541 A JP2012259541 A JP 2012259541A JP 6099949 B2 JP6099949 B2 JP 6099949B2
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- electrode
- barrier layer
- metal
- layer
- insulating layer
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 42
- 229910052802 copper Inorganic materials 0.000 title claims description 42
- 239000010949 copper Substances 0.000 title claims description 42
- 230000004888 barrier function Effects 0.000 claims description 575
- 229910052751 metal Inorganic materials 0.000 claims description 437
- 239000002184 metal Substances 0.000 claims description 437
- 239000000758 substrate Substances 0.000 claims description 143
- 239000010410 layer Substances 0.000 description 816
- 238000000034 method Methods 0.000 description 169
- 239000000463 material Substances 0.000 description 83
- 239000011229 interlayer Substances 0.000 description 65
- 229910004166 TaN Inorganic materials 0.000 description 64
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 62
- 229910052718 tin Inorganic materials 0.000 description 62
- 229910052715 tantalum Inorganic materials 0.000 description 56
- 239000004065 semiconductor Substances 0.000 description 47
- 230000008569 process Effects 0.000 description 39
- 229910052581 Si3N4 Inorganic materials 0.000 description 31
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 30
- 229910052710 silicon Inorganic materials 0.000 description 30
- 239000010703 silicon Substances 0.000 description 30
- 229910008599 TiW Inorganic materials 0.000 description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 26
- 229910052814 silicon oxide Inorganic materials 0.000 description 26
- 150000004767 nitrides Chemical class 0.000 description 18
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 18
- 150000002739 metals Chemical class 0.000 description 12
- 239000012212 insulator Substances 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910004541 SiN Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007792 addition Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 241000543381 Cliftonia monophylla Species 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
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- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000013403 standard screening design Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- Condensed Matter Physics & Semiconductors (AREA)
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Wire Bonding (AREA)
Description
下部ビア構造体480は下部基板405を貫通する形状に形成することができる。下部ビア構造体480は、下部ビアバリア層481及び下部ビアプラグ486を含むことができる。下部ビアバリア層481はシリコン窒化物を含むことができる。他の実施形態において、下部ビアバリア層481は、Ti、Ti/TiN、TiN、TiW、Ta、Ta/TaN、TaN、またはその他の金属/金属窒化物層を含むことができる。下部ビアプラグ486は銅のような金属を含むことができる。
101 下部素子
102 上部素子
105 下部基板
106 上部基板
121 下部絶縁層
122 上部絶縁層
GL 下部グルーブ
GU 上部グルーブ
130S 表面電極バリア層
131A〜131G 下部電極バリア層
132A〜132G 上部電極バリア層
141A〜141G 下部金属電極
142A〜142G 上部金属電極
150A〜150G 電極構造体
150P 突出部
151A〜151G 下部電極構造体
152A〜152G 上部電極構造体
200A〜200G 電極連結構造体
201 基板部
202 再配線部
205 下部基板
210 最下部絶縁層
213 下部配線バリア層
214 下部金属配線
215 下部配線
220 下部絶縁層
225 下部層間バリア層
AG エアギャップ
GL1 最下部グルーブ
GL2 下部グルーブ
GU1 上部グルーブ
GU2 最上部グルーブ
230S 表面電極バリア層
231A〜231G 下部電極バリア層
232A〜232G 上部電極バリア層
241A〜241G 下部金属電極
242A〜242G 上部金属電極
250P 突出部
250A〜250G 電極構造体
251A〜251G 下部電極構造体
252A〜252G 上部電極構造体
260 上部絶縁層
265 上部層間バリア層
270 最上部絶縁層
273 再配線バリア層
274 再配線金属配線
275 再配線構造
300A〜300G 電極連結構造体
301 下部素子
302 上部素子
305 下部基板
306 上部基板
311 下部ストッパ層
312 上部ストッパ層
313 下部配線バリア層
314 下部金属配線
315 下部配線
317 上部配線バリア層
318 上部金属配線
319 上部配線
321 下部層間絶縁層
322 上部層間絶縁層
330S 表面電極バリア層
331A〜331G 下部電極バリア層
332A〜332G 上部電極バリア層
341A〜341G 下部金属電極
342A〜342G 上部金属電極
350A〜350G 電極構造体
350P 突出部
351A〜351G 下部電極構造体
352A〜352G 上部電極構造体
361 下部層間バリア層
362 上部層間バリア層
363 下部ビアバリア層
364 下部ビアプラグ
365 下部ビア構造体
367 上部ビアバリア層
368 上部ビアプラグ
369 上部ビア構造体
371 下部絶縁層
372 上部絶縁層
400A〜400G 電極連結構造体
401 下部素子
402 上部素子
405 下部基板
406 上部基板
430S 表面電極バリア層
431A〜431G 下部電極バリア層
432A〜432G 上部電極バリア層
441A〜441G 下部金属電極
442A〜442G 上部金属電極
450A〜450G 電極構造体
450P 突出部
451A〜451G 下部電極構造体
452A〜452G 上部電極構造体
480 下部ビア構造体
481 下部ビアバリア層
486 下部ビアプラグ
490 下部ビア構造体
500A〜500G 素子積層構造体
501A〜501G、502A〜502G、503A〜503G、504A〜504G 半導体素子
505 回路基板
506〜509 基板
530S 表面電極バリア層
531A〜531G、532A〜532G、533A〜533G、534A〜534G 電極バリア層
541A〜541G、542A〜542G、543A〜533G、544A〜544G 金属電極
550P 突出部
551A〜551G、552A〜552G、553A〜553G、554A〜554G 電極構造体
570 上部キャッピング層
571〜574 下部絶縁層
576〜579 上部絶縁層
581A〜581G、582A〜582G、583A〜583G、584A〜584G ビアバリア層
586A〜586G、587A〜587G、588A〜588G、589A〜589G ビアプラグ
591A〜591G、592A〜592G、593A〜593G、594A〜594G ビア構造体
595 金属連結部
600A〜600G 電極連結構造体
601 下部素子
602 上部素子
605 下部基板
606 上部基板
630S 表面電極バリア層
631A〜631G、637A〜637G 上部電極バリア層
632A〜632G、636A〜636G 下部電極バリア層
641A〜641G、647A〜647G 上部金属電極
642A〜642G、646A〜646G 下部金属電極
650P 突出部
650A〜650G 電極構造体
651A〜651G、657A〜657G 上部電極構造体
652A〜652G、656A〜656G 下部電極構造体
681A〜681G、682A〜682G ビアバリア層
686A〜686G、687A〜687G ビアプラグ
691A〜691G、692A〜692G ビア構造体
801A〜801L 下部素子
805 下部基板
813 下部配線バリア層
814 下部金属配線
815 下部配線
821 下部絶縁層
825 下部層間バリア層
830 表面電極バリア層
830’ 表面電極バリア物質層
831 下部電極バリア層
831’ 下部電極バリア物質層
S 下部シード層
841 下部金属電極
841’ 下部電極金属層
851 下部電極構造体
880 下部ビア構造体
881 下部ビアプラグ
886 下部ビアバリア層
902A〜902E 上部素子
906 上部基板
922 上部絶縁層
932 上部電極バリア層
932’ 上部電極バリア物質層
932” 予備上部電極バリア層
942 上部金属電極’
942’ 上部電極金属層
942” 第1予備上部金属電極
942”’ 第2予備上部金属電極
952 上部電極構造体
966 上部層間バリア層
973 上部配線バリア層
974 上部金属配線
975 上部配線
1000A〜1000H 電極連結構造体
1001A〜1001H 下部素子
1002A〜1002H 上部素子
1005 下部基板
1006 上部基板
1030S 表面電極バリア層
1031A〜1031H 下部電極バリア層
1032A〜1032H 上部電極バリア層
1041A〜1041H 下部金属電極
1042A〜1042H 上部金属電極
1051A〜1051H 下部電極構造体
1052A〜1052H 上部電極構造体
2000 モジュール
2010 モジュール基板
2020 マイクロプロセッサ
2030 半導体パッケージ
2040 入出力ターミナル
2100 電子システム
2110 ボディ
2120 マイクロプロセッサユニット
2130 パワー供給ユニット
2140 機能ユニット
2150 ディスプレイコントローラユニット
2160 ディスプレイユニット
2170 外部装置
2180 通信ユニット
2200 電子システム
2212 メモリシステム
2214 マイクロプロセッサ
2216 ラム
2218 ユーザーインターフェース
2220 バス
2300 携帯電話
Claims (10)
- 下部基板と、前記下部基板の上に形成された下部絶縁層と、前記下部絶縁層内に形成された下部電極構造体と、を含み、前記下部電極構造体は、下部電極バリア層及び前記下部電極バリア層上に形成された下部金属電極を含む、下部素子、並びに
上部基板と、前記上部基板の下に形成された上部絶縁層と、前記上部絶縁層内に形成された上部電極構造体と、を含み、前記上部電極構造体は、前記上部絶縁層の内部から下部表面下に延長された上部電極バリア層及び前記上部電極バリア層上に形成された上部金属電極を含む、上部素子を含み、並びに前記下部金属電極と前記上部金属電極が直接的に接触し、
前記下部電極バリア層は第1水平幅を有し、前記下部金属電極は前記第1水平幅よりも狭い第2水平幅を有し、前記上部電極バリア層は前記第1水平幅よりも広い第3水平幅を有し、前記上部金属電極は前記第2水平幅よりも狭い第4水平幅を有することを特徴とする電極連結構造体。 - 前記下部金属電極と前記上部金属電極は、銅を含み、且つ物質的に連続することを特徴とする請求項1に記載の電極連結構造体。
- 前記下部金属電極の一部と前記上部電極バリア層の一部が直接的に接触することを特徴とする請求項1又は2に記載の電極連結構造体。
- 前記下部絶縁層は下部グルーブを含み、
前記下部電極バリア層は前記下部グルーブの底面及び側面上にコンフォーマルに形成され、且つ
前記下部電極バリア層の上端部は前記下部絶縁層の上部表面上に露出されることを特徴とする請求項1から3の何れか一項に記載の電極連結構造体。 - 前記下部電極バリア層の上端部は前記下部絶縁層の上部表面よりも高く突出することを特徴とする請求項1から4の何れか一項に記載の電極連結構造体。
- 前記下部金属電極の上部表面は、
前記下部電極バリア層の上端部よりも高く突出することを特徴とする請求項1から5の何れか一項に記載の電極連結構造体。 - 前記上部絶縁層は上部グルーブを含み、
前記上部電極バリア層は前記上部グルーブの底面及び側面上にコンフォーマルに形成され、且つ
前記上部電極バリア層の一部が前記上部絶縁層の下部表面下に延長されることを特徴とする請求項1から6の何れか一項に記載の電極連結構造体。 - 前記上部電極バリア層の上部表面は前記上部絶縁層の下部表面よりも下に突出することを特徴とする請求項1から7の何れか一項に記載の電極連結構造体。
- 前記下部金属電極または前記上部金属電極の一部は、前記下部絶縁層と前記上部電極バリア層との間に突出することを特徴とする請求項1から8の何れか一項に記載の電極連結構造体。
- 下部絶縁層と、
前記下部絶縁層内に形成され、第1水平幅を有する下部電極バリア層と、
前記下部電極バリア層に側面が覆われ、前記第1水平幅よりも狭い第2水平幅を有する下部銅電極と、
前記下部絶縁層上に形成された上部絶縁層と、
前記上部絶縁層内に形成され、前記下部銅電極の上部表面の一部と接触して前記第1水平幅よりも広い第3水平幅を有する上部電極バリア層と、
前記下部銅電極と直接的に接触し、前記上部電極バリア層に覆われ、前記第2水平幅よりも狭い第4水平幅を有する上部銅電極と、を含むことを特徴とする電極連結構造体。
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