JP6093504B2 - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
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- JP6093504B2 JP6093504B2 JP2012021090A JP2012021090A JP6093504B2 JP 6093504 B2 JP6093504 B2 JP 6093504B2 JP 2012021090 A JP2012021090 A JP 2012021090A JP 2012021090 A JP2012021090 A JP 2012021090A JP 6093504 B2 JP6093504 B2 JP 6093504B2
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- Prior art keywords
- substrate
- hydrogen
- heat treatment
- crystalline silicon
- implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 claims description 100
- 239000000758 substrate Substances 0.000 claims description 48
- 239000001257 hydrogen Substances 0.000 claims description 45
- 229910052739 hydrogen Inorganic materials 0.000 claims description 45
- 238000002513 implantation Methods 0.000 claims description 45
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 41
- 239000002019 doping agent Substances 0.000 claims description 36
- 238000010438 heat treatment Methods 0.000 claims description 35
- 238000002161 passivation Methods 0.000 claims description 31
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 22
- 238000010304 firing Methods 0.000 claims description 20
- 238000004151 rapid thermal annealing Methods 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 19
- 238000001465 metallisation Methods 0.000 claims description 18
- 239000006117 anti-reflective coating Substances 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 6
- 230000003213 activating effect Effects 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 238000010344 co-firing Methods 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 45
- 238000000137 annealing Methods 0.000 description 20
- 238000009792 diffusion process Methods 0.000 description 18
- 230000008901 benefit Effects 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 230000007547 defect Effects 0.000 description 10
- 238000011109 contamination Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 230000004913 activation Effects 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 239000007943 implant Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
パッシベーション層またはパッシベーションスタックを裏側に形成する工程と、
裏側のメタライゼーション工程および表側のメタライゼーション工程を行う工程と、
裏側のメタライゼーションと表側のメタライゼーションを、例えば600℃と1000℃の間の範囲の温度で共同焼成する工程と、を含む。
Claims (15)
- 結晶シリコン太陽電池の製造方法であって、
第1ドーパント型の結晶シリコン基板を提供する工程と、
注入工程を行い、これにより、結晶シリコン基板の表側に、第1型とは反対の第2型のドーパントを導入して、第2型のドーパントを電気的に活性化することなく注入領域を形成する工程と、
注入工程後に、基板の注入領域の上に水素含有層を堆積する工程と、
水素含有層の堆積後に、800℃〜1050℃の温度で、熱処理を行い、これにより第2型のドーパントを電気的に活性化する工程とを含み、
基板の表面上に水素含有層を堆積する工程は、注入工程に続いて行われ、
600℃より高い温度でのいずれの高温工程が行われるより前に、水素含有層を堆積する工程が行われる方法。 - 水素含有層を堆積する工程は、水素リッチのシリコン窒化物層を堆積する工程を含む請求項1に記載の方法。
- 水素含有層を堆積する工程は、反射防止コーティング(ARC)および/または表面パッシベーション層を堆積する工程を含む請求項1または2に記載の方法。
- 熱処理を行う工程は、高速熱アニール(RTA)工程を行う工程を含む請求項1〜3のいずれかに記載の方法。
- 熱処理は、数10秒から数分の間行われる請求項1〜4のいずれかに記載の方法。
- 熱処理後に、30nmと300nmの間の深さ有する、結晶シリコン太陽電池のエミッタ領域に対応するシャロー領域を形成する請求項1〜5のいずれかに記載の方法。
- 熱処理後に、100nmと500nmの間の深さ有する、結晶シリコン太陽電池のエミッタ領域に対応するシャロー接合を形成する請求項1〜6のいずれかに記載の方法。
- 第1ドーパント型の結晶シリコン基板はp型基板であり、第2型のドーパントはn型ドーパントである請求項1〜7のいずれかに記載の方法。
- 第1ドーパント型の結晶シリコン基板はn型基板であり、第2型のドーパントはp型ドーパントである請求項1〜7のいずれかに記載の方法。
- 結晶シリコン基板は、単結晶基板または多結晶基板を含む請求項1〜9のいずれかに記載の方法。
- 更に、熱処理を行う前に、結晶シリコン基板の裏側にパッシベーション層またはパッシベーションスタックを形成する工程を含む請求項1〜10のいずれかに記載の方法。
- 熱処理を、製造プロセス中の続きの工程の1つと結合させる工程を含む請求項1〜10のいずれかに記載の方法。
- 更に、基板の裏側に金属層を堆積する工程と、金属焼成工程とを含み、金属焼成工程は熱処理に対応する請求項12に記載の方法。
- 裏側にパッシベーション層またはパッシベーションスタックを形成する工程と、
裏側メタライゼーション工程と表側メタライゼーション工程とを行う工程と、
裏側メタライゼーションと表側メタライゼーションとを共同焼成する工程とを更に含む請求項12に記載の方法。 - 裏側のパッシベーション層またはパッシベーションスタックは、熱処理の前で、基板の表面上に水素含有層を堆積した後に形成される請求項14に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161439310P | 2011-02-03 | 2011-02-03 | |
US61/439,310 | 2011-02-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012199517A JP2012199517A (ja) | 2012-10-18 |
JP6093504B2 true JP6093504B2 (ja) | 2017-03-08 |
Family
ID=45529001
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012021090A Expired - Fee Related JP6093504B2 (ja) | 2011-02-03 | 2012-02-02 | 太陽電池の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20120199202A1 (ja) |
EP (1) | EP2490268A1 (ja) |
JP (1) | JP6093504B2 (ja) |
TW (1) | TW201234484A (ja) |
Families Citing this family (23)
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CN102239565B (zh) * | 2008-12-02 | 2016-04-06 | 三菱电机株式会社 | 太阳能电池单元的制造方法 |
US8749053B2 (en) | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
KR101729304B1 (ko) * | 2010-12-21 | 2017-04-21 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
US8664015B2 (en) * | 2011-10-13 | 2014-03-04 | Samsung Sdi Co., Ltd. | Method of manufacturing photoelectric device |
CN103890978A (zh) * | 2011-10-28 | 2014-06-25 | 应用材料公司 | 用于太阳能电池制造的背接点通孔形成工艺 |
US9018517B2 (en) * | 2011-11-07 | 2015-04-28 | International Business Machines Corporation | Silicon heterojunction photovoltaic device with wide band gap emitter |
SG10201508582WA (en) | 2011-11-08 | 2015-11-27 | Intevac Inc | Substrate processing system and method |
KR101872786B1 (ko) | 2012-06-22 | 2018-06-29 | 엘지전자 주식회사 | 태양 전지의 불순물층 형성 방법 및 태양 전지의 제조 방법 |
US20140166087A1 (en) * | 2012-12-18 | 2014-06-19 | Intevac, Inc. | Solar cells having graded doped regions and methods of making solar cells having graded doped regions |
MY178951A (en) | 2012-12-19 | 2020-10-23 | Intevac Inc | Grid for plasma ion implant |
CN103151421A (zh) * | 2013-01-31 | 2013-06-12 | 青海聚能电力有限公司 | 晶体硅太阳能电池的浅浓度扩散工艺 |
TWI505484B (zh) * | 2013-05-31 | 2015-10-21 | Motech Ind Inc | 太陽能電池及其模組 |
DE102013218351A1 (de) | 2013-09-13 | 2015-03-19 | Robert Bosch Gmbh | Verfahren zur Herstellung einer Solarzelle |
KR102320551B1 (ko) * | 2015-01-16 | 2021-11-01 | 엘지전자 주식회사 | 태양 전지의 제조 방법 |
CN104638033A (zh) * | 2015-02-11 | 2015-05-20 | 苏州金瑞晨科技有限公司 | 纳米硅硼浆及其应用于制备perl太阳能电池的方法 |
CN105470337A (zh) * | 2015-12-30 | 2016-04-06 | 无锡赛晶太阳能有限公司 | 一种perc太阳能电池及其制备方法 |
CN105470349A (zh) * | 2015-12-30 | 2016-04-06 | 无锡赛晶太阳能有限公司 | Perc太阳能电池及其制备方法 |
CN106653895B (zh) * | 2016-12-30 | 2020-05-12 | 苏州阿特斯阳光电力科技有限公司 | 一种局部掺杂晶体硅太阳能电池及其制备方法 |
CN107221580B (zh) * | 2017-06-15 | 2018-10-12 | 常州亿晶光电科技有限公司 | 提升perc背钝化效果的电池制备方法 |
JP6677678B2 (ja) * | 2017-06-23 | 2020-04-08 | 信越化学工業株式会社 | 高効率太陽電池の製造方法 |
CN108054221A (zh) * | 2017-12-18 | 2018-05-18 | 湖南红太阳光电科技有限公司 | 双面perc电池的背面栅线结构、双面perc电池及其制备方法 |
CN108987531A (zh) * | 2018-07-20 | 2018-12-11 | 通威太阳能(安徽)有限公司 | 一种类单晶perc太阳能电池制备方法 |
JP7088239B2 (ja) * | 2020-08-20 | 2022-06-21 | 株式会社Sumco | エピタキシャル成長用の半導体ウェーハ、および半導体エピタキシャルウェーハの製造方法 |
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JPS6063968A (ja) * | 1984-04-02 | 1985-04-12 | Nippon Telegr & Teleph Corp <Ntt> | 太陽電池 |
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-
2012
- 2012-01-30 EP EP12153029A patent/EP2490268A1/en not_active Ceased
- 2012-01-31 TW TW101103001A patent/TW201234484A/zh unknown
- 2012-02-02 JP JP2012021090A patent/JP6093504B2/ja not_active Expired - Fee Related
- 2012-02-03 US US13/365,874 patent/US20120199202A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20120199202A1 (en) | 2012-08-09 |
TW201234484A (en) | 2012-08-16 |
EP2490268A1 (en) | 2012-08-22 |
JP2012199517A (ja) | 2012-10-18 |
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