JP6091490B2 - レジスト形状におけるクリティカルディメンション及びラフネスの制御方法及び制御システム - Google Patents

レジスト形状におけるクリティカルディメンション及びラフネスの制御方法及び制御システム Download PDF

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JP6091490B2
JP6091490B2 JP2014509322A JP2014509322A JP6091490B2 JP 6091490 B2 JP6091490 B2 JP 6091490B2 JP 2014509322 A JP2014509322 A JP 2014509322A JP 2014509322 A JP2014509322 A JP 2014509322A JP 6091490 B2 JP6091490 B2 JP 6091490B2
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plasma
exposure
relief shape
substrate
critical dimension
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Japanese (ja)
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JP2014515889A (ja
JP2014515889A5 (https=
Inventor
ゴデ ルドヴィック
ゴデ ルドヴィック
ジェイ リーヴィット クリストファー
ジェイ リーヴィット クリストファー
オルソン ジョセフ
オルソン ジョセフ
エム マーティン パトリック
エム マーティン パトリック
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ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2024—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure of the already developed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H01J37/3023—Program control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Combustion & Propulsion (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Plasma Technology (AREA)
JP2014509322A 2011-05-03 2012-04-26 レジスト形状におけるクリティカルディメンション及びラフネスの制御方法及び制御システム Active JP6091490B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/099,432 US8354655B2 (en) 2011-05-03 2011-05-03 Method and system for controlling critical dimension and roughness in resist features
US13/099,432 2011-05-03
PCT/US2012/035218 WO2012151108A1 (en) 2011-05-03 2012-04-26 Method and system for controlling critical dimension and roughness in resist features

Publications (3)

Publication Number Publication Date
JP2014515889A JP2014515889A (ja) 2014-07-03
JP2014515889A5 JP2014515889A5 (https=) 2015-04-02
JP6091490B2 true JP6091490B2 (ja) 2017-03-08

Family

ID=46125505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014509322A Active JP6091490B2 (ja) 2011-05-03 2012-04-26 レジスト形状におけるクリティカルディメンション及びラフネスの制御方法及び制御システム

Country Status (6)

Country Link
US (2) US8354655B2 (https=)
JP (1) JP6091490B2 (https=)
KR (1) KR101911330B1 (https=)
CN (1) CN103620730B (https=)
TW (1) TWI532071B (https=)
WO (1) WO2012151108A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8354655B2 (en) * 2011-05-03 2013-01-15 Varian Semiconductor Equipment Associates, Inc. Method and system for controlling critical dimension and roughness in resist features
US8974683B2 (en) * 2011-09-09 2015-03-10 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying resist openings using multiple angled ions
CN104345568A (zh) * 2013-08-07 2015-02-11 中芯国际集成电路制造(上海)有限公司 减小光刻胶图形线宽粗糙度的方法
CN104465333B (zh) * 2013-09-17 2017-12-29 中芯国际集成电路制造(上海)有限公司 光刻胶图形的形成方法、晶体管栅极的形成方法
US9520267B2 (en) * 2014-06-20 2016-12-13 Applied Mateirals, Inc. Bias voltage frequency controlled angular ion distribution in plasma processing
US9837254B2 (en) 2014-08-12 2017-12-05 Lam Research Corporation Differentially pumped reactive gas injector
US9406535B2 (en) 2014-08-29 2016-08-02 Lam Research Corporation Ion injector and lens system for ion beam milling
US10825652B2 (en) 2014-08-29 2020-11-03 Lam Research Corporation Ion beam etch without need for wafer tilt or rotation
US9536748B2 (en) 2014-10-21 2017-01-03 Lam Research Corporation Use of ion beam etching to generate gate-all-around structure
JP2016213475A (ja) 2015-05-13 2016-12-15 東京エレクトロン株式会社 シュリンク及び成長方法を使用する極端紫外線感度低下
US9779955B2 (en) 2016-02-25 2017-10-03 Lam Research Corporation Ion beam etching utilizing cryogenic wafer temperatures
DE102016119437B4 (de) * 2016-10-12 2024-05-23 scia Systems GmbH Verfahren zum Bearbeiten einer Oberfläche mittels eines Teilchenstrahls
DE102016119791A1 (de) * 2016-10-18 2018-04-19 scia Systems GmbH Verfahren und Vorrichtung zum Bearbeiten einer Oberfläche eines Substrates mittels eines Teilchenstrahls
KR20180082851A (ko) * 2017-01-11 2018-07-19 삼성전자주식회사 반도체 소자의 패턴 형성 방법 및 이를 이용한 반도체 소자의 제조 방법
KR20250011246A (ko) 2019-02-28 2025-01-21 램 리써치 코포레이션 측벽 세정을 사용한 이온 빔 에칭
US11495436B2 (en) * 2020-04-30 2022-11-08 Tokyo Electron Limited Systems and methods to control critical dimension (CD) shrink ratio through radio frequency (RF) pulsing
US12354873B2 (en) 2020-09-30 2025-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for multiple step directional patterning

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2716547A1 (fr) * 1994-02-24 1995-08-25 Fujitsu Ltd Procédé pour former un motif de résist et pour fabriquer un dispositif à semi-conducteur.
US7838850B2 (en) * 1999-12-13 2010-11-23 Semequip, Inc. External cathode ion source
EP1630849B1 (en) * 2004-08-27 2011-11-02 Fei Company Localized plasma processing
EP2079103A4 (en) * 2006-10-30 2010-05-26 Japan Aviation Electron PROCESS FOR MACHINING A SOLID SURFACE WITH A GAS CLUSTER ION BEAM
JP5108489B2 (ja) * 2007-01-16 2012-12-26 株式会社日立ハイテクノロジーズ プラズマ処理方法
US8623171B2 (en) 2009-04-03 2014-01-07 Varian Semiconductor Equipment Associates, Inc. Plasma processing apparatus
US7767977B1 (en) * 2009-04-03 2010-08-03 Varian Semiconductor Equipment Associates, Inc. Ion source
US8778603B2 (en) * 2010-03-15 2014-07-15 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying substrate relief features using ion implantation
US8435727B2 (en) 2010-10-01 2013-05-07 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying photoresist using electromagnetic radiation and ion implantation
US8354655B2 (en) * 2011-05-03 2013-01-15 Varian Semiconductor Equipment Associates, Inc. Method and system for controlling critical dimension and roughness in resist features

Also Published As

Publication number Publication date
JP2014515889A (ja) 2014-07-03
US8698109B2 (en) 2014-04-15
CN103620730B (zh) 2016-02-24
KR101911330B1 (ko) 2018-12-19
WO2012151108A1 (en) 2012-11-08
KR20140025497A (ko) 2014-03-04
US20120280140A1 (en) 2012-11-08
CN103620730A (zh) 2014-03-05
US20130135598A1 (en) 2013-05-30
TW201250410A (en) 2012-12-16
US8354655B2 (en) 2013-01-15
TWI532071B (zh) 2016-05-01

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