KR101911330B1 - 레지스트 특징부들의 임계 치수 및 러프니스를 제어하기 위한 방법 및 시스템 - Google Patents

레지스트 특징부들의 임계 치수 및 러프니스를 제어하기 위한 방법 및 시스템 Download PDF

Info

Publication number
KR101911330B1
KR101911330B1 KR1020137031655A KR20137031655A KR101911330B1 KR 101911330 B1 KR101911330 B1 KR 101911330B1 KR 1020137031655 A KR1020137031655 A KR 1020137031655A KR 20137031655 A KR20137031655 A KR 20137031655A KR 101911330 B1 KR101911330 B1 KR 101911330B1
Authority
KR
South Korea
Prior art keywords
exposure
plasma
photoresist relief
critical dimension
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020137031655A
Other languages
English (en)
Korean (ko)
Other versions
KR20140025497A (ko
Inventor
루도빅 고데
크리스토퍼 제이. 레비트
죠셉 올슨
패트릭 엠. 마틴
Original Assignee
베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. filed Critical 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
Publication of KR20140025497A publication Critical patent/KR20140025497A/ko
Application granted granted Critical
Publication of KR101911330B1 publication Critical patent/KR101911330B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2024—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure of the already developed image
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H01J37/3023—Program control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Combustion & Propulsion (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Plasma Technology (AREA)
KR1020137031655A 2011-05-03 2012-04-26 레지스트 특징부들의 임계 치수 및 러프니스를 제어하기 위한 방법 및 시스템 Active KR101911330B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/099,432 US8354655B2 (en) 2011-05-03 2011-05-03 Method and system for controlling critical dimension and roughness in resist features
US13/099,432 2011-05-03
PCT/US2012/035218 WO2012151108A1 (en) 2011-05-03 2012-04-26 Method and system for controlling critical dimension and roughness in resist features

Publications (2)

Publication Number Publication Date
KR20140025497A KR20140025497A (ko) 2014-03-04
KR101911330B1 true KR101911330B1 (ko) 2018-12-19

Family

ID=46125505

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137031655A Active KR101911330B1 (ko) 2011-05-03 2012-04-26 레지스트 특징부들의 임계 치수 및 러프니스를 제어하기 위한 방법 및 시스템

Country Status (6)

Country Link
US (2) US8354655B2 (https=)
JP (1) JP6091490B2 (https=)
KR (1) KR101911330B1 (https=)
CN (1) CN103620730B (https=)
TW (1) TWI532071B (https=)
WO (1) WO2012151108A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8354655B2 (en) * 2011-05-03 2013-01-15 Varian Semiconductor Equipment Associates, Inc. Method and system for controlling critical dimension and roughness in resist features
US8974683B2 (en) * 2011-09-09 2015-03-10 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying resist openings using multiple angled ions
CN104345568A (zh) * 2013-08-07 2015-02-11 中芯国际集成电路制造(上海)有限公司 减小光刻胶图形线宽粗糙度的方法
CN104465333B (zh) * 2013-09-17 2017-12-29 中芯国际集成电路制造(上海)有限公司 光刻胶图形的形成方法、晶体管栅极的形成方法
US9520267B2 (en) * 2014-06-20 2016-12-13 Applied Mateirals, Inc. Bias voltage frequency controlled angular ion distribution in plasma processing
US9837254B2 (en) 2014-08-12 2017-12-05 Lam Research Corporation Differentially pumped reactive gas injector
US9406535B2 (en) 2014-08-29 2016-08-02 Lam Research Corporation Ion injector and lens system for ion beam milling
US10825652B2 (en) 2014-08-29 2020-11-03 Lam Research Corporation Ion beam etch without need for wafer tilt or rotation
US9536748B2 (en) 2014-10-21 2017-01-03 Lam Research Corporation Use of ion beam etching to generate gate-all-around structure
JP2016213475A (ja) 2015-05-13 2016-12-15 東京エレクトロン株式会社 シュリンク及び成長方法を使用する極端紫外線感度低下
US9779955B2 (en) 2016-02-25 2017-10-03 Lam Research Corporation Ion beam etching utilizing cryogenic wafer temperatures
DE102016119437B4 (de) * 2016-10-12 2024-05-23 scia Systems GmbH Verfahren zum Bearbeiten einer Oberfläche mittels eines Teilchenstrahls
DE102016119791A1 (de) * 2016-10-18 2018-04-19 scia Systems GmbH Verfahren und Vorrichtung zum Bearbeiten einer Oberfläche eines Substrates mittels eines Teilchenstrahls
KR20180082851A (ko) * 2017-01-11 2018-07-19 삼성전자주식회사 반도체 소자의 패턴 형성 방법 및 이를 이용한 반도체 소자의 제조 방법
KR20250011246A (ko) 2019-02-28 2025-01-21 램 리써치 코포레이션 측벽 세정을 사용한 이온 빔 에칭
US11495436B2 (en) * 2020-04-30 2022-11-08 Tokyo Electron Limited Systems and methods to control critical dimension (CD) shrink ratio through radio frequency (RF) pulsing
US12354873B2 (en) 2020-09-30 2025-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for multiple step directional patterning

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2716547A1 (fr) * 1994-02-24 1995-08-25 Fujitsu Ltd Procédé pour former un motif de résist et pour fabriquer un dispositif à semi-conducteur.
US7838850B2 (en) * 1999-12-13 2010-11-23 Semequip, Inc. External cathode ion source
EP1630849B1 (en) * 2004-08-27 2011-11-02 Fei Company Localized plasma processing
EP2079103A4 (en) * 2006-10-30 2010-05-26 Japan Aviation Electron PROCESS FOR MACHINING A SOLID SURFACE WITH A GAS CLUSTER ION BEAM
JP5108489B2 (ja) * 2007-01-16 2012-12-26 株式会社日立ハイテクノロジーズ プラズマ処理方法
US8623171B2 (en) 2009-04-03 2014-01-07 Varian Semiconductor Equipment Associates, Inc. Plasma processing apparatus
US7767977B1 (en) * 2009-04-03 2010-08-03 Varian Semiconductor Equipment Associates, Inc. Ion source
US8778603B2 (en) * 2010-03-15 2014-07-15 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying substrate relief features using ion implantation
US8435727B2 (en) 2010-10-01 2013-05-07 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying photoresist using electromagnetic radiation and ion implantation
US8354655B2 (en) * 2011-05-03 2013-01-15 Varian Semiconductor Equipment Associates, Inc. Method and system for controlling critical dimension and roughness in resist features

Also Published As

Publication number Publication date
JP2014515889A (ja) 2014-07-03
US8698109B2 (en) 2014-04-15
CN103620730B (zh) 2016-02-24
WO2012151108A1 (en) 2012-11-08
KR20140025497A (ko) 2014-03-04
US20120280140A1 (en) 2012-11-08
CN103620730A (zh) 2014-03-05
JP6091490B2 (ja) 2017-03-08
US20130135598A1 (en) 2013-05-30
TW201250410A (en) 2012-12-16
US8354655B2 (en) 2013-01-15
TWI532071B (zh) 2016-05-01

Similar Documents

Publication Publication Date Title
KR101911330B1 (ko) 레지스트 특징부들의 임계 치수 및 러프니스를 제어하기 위한 방법 및 시스템
JP5728566B2 (ja) イオン注入を用いて基板のパターン化特徴を変更するための方法及びシステム
US9340877B2 (en) Method and system for modifying photoresist using electromagnetic radiation and ion implantation
US8460569B2 (en) Method and system for post-etch treatment of patterned substrate features
TWI520181B (zh) 使用多階離子植入將圖案化光阻改質的方法及其系統
JP2013527595A5 (https=)
US8974683B2 (en) Method and system for modifying resist openings using multiple angled ions
KR20130124149A (ko) 이온 주입을 사용하는 기판 패턴화된 특징부들의 수정 방법 및 시스템

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20131128

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20170109

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20180131

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20180821

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20181018

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20181019

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20210927

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20230921

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee