JP6087672B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6087672B2
JP6087672B2 JP2013049985A JP2013049985A JP6087672B2 JP 6087672 B2 JP6087672 B2 JP 6087672B2 JP 2013049985 A JP2013049985 A JP 2013049985A JP 2013049985 A JP2013049985 A JP 2013049985A JP 6087672 B2 JP6087672 B2 JP 6087672B2
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Japan
Prior art keywords
layer
insulating layer
oxide semiconductor
transistor
film
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JP2013049985A
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Japanese (ja)
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JP2013219345A5 (https=
JP2013219345A (ja
Inventor
慎也 笹川
慎也 笹川
求 倉田
求 倉田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2013049985A priority Critical patent/JP6087672B2/ja
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  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
JP2013049985A 2012-03-16 2013-03-13 半導体装置 Active JP6087672B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013049985A JP6087672B2 (ja) 2012-03-16 2013-03-13 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012060444 2012-03-16
JP2012060444 2012-03-16
JP2013049985A JP6087672B2 (ja) 2012-03-16 2013-03-13 半導体装置

Related Child Applications (1)

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JP2017017241A Division JP6427211B2 (ja) 2012-03-16 2017-02-02 半導体装置

Publications (3)

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JP2013219345A JP2013219345A (ja) 2013-10-24
JP2013219345A5 JP2013219345A5 (https=) 2016-04-07
JP6087672B2 true JP6087672B2 (ja) 2017-03-01

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JP2013049985A Active JP6087672B2 (ja) 2012-03-16 2013-03-13 半導体装置
JP2017017241A Expired - Fee Related JP6427211B2 (ja) 2012-03-16 2017-02-02 半導体装置

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JP2017017241A Expired - Fee Related JP6427211B2 (ja) 2012-03-16 2017-02-02 半導体装置

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI665778B (zh) * 2014-02-05 2019-07-11 日商半導體能源研究所股份有限公司 半導體裝置、模組及電子裝置
US9443876B2 (en) * 2014-02-05 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module
JP2015188062A (ja) * 2014-02-07 2015-10-29 株式会社半導体エネルギー研究所 半導体装置
JP6235426B2 (ja) 2014-07-10 2017-11-22 株式会社東芝 半導体装置およびその製造方法
WO2018178806A1 (ja) * 2017-03-31 2018-10-04 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
KR102631152B1 (ko) * 2017-08-04 2024-01-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US11205664B2 (en) * 2017-12-27 2021-12-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0992837A (ja) * 1995-09-26 1997-04-04 Sharp Corp 薄膜トランジスタおよびその製造方法
US6583016B1 (en) * 2002-03-26 2003-06-24 Advanced Micro Devices, Inc. Doped spacer liner for improved transistor performance
JP2005116977A (ja) * 2003-10-10 2005-04-28 Sharp Corp 薄膜トランジスタおよびその製造方法
JP2007073705A (ja) * 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP5708910B2 (ja) * 2010-03-30 2015-04-30 ソニー株式会社 薄膜トランジスタおよびその製造方法、並びに表示装置
JP5606787B2 (ja) * 2010-05-18 2014-10-15 富士フイルム株式会社 薄膜トランジスタの製造方法、並びに、薄膜トランジスタ、イメージセンサー、ｘ線センサー及びｘ線デジタル撮影装置
JP2012015436A (ja) * 2010-07-05 2012-01-19 Sony Corp 薄膜トランジスタおよび表示装置
KR101932576B1 (ko) * 2010-09-13 2018-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법

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Publication number Publication date
JP2017112390A (ja) 2017-06-22
JP6427211B2 (ja) 2018-11-21
JP2013219345A (ja) 2013-10-24

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