JP6076073B2 - 発光素子 - Google Patents

発光素子 Download PDF

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Publication number
JP6076073B2
JP6076073B2 JP2012279059A JP2012279059A JP6076073B2 JP 6076073 B2 JP6076073 B2 JP 6076073B2 JP 2012279059 A JP2012279059 A JP 2012279059A JP 2012279059 A JP2012279059 A JP 2012279059A JP 6076073 B2 JP6076073 B2 JP 6076073B2
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JP
Japan
Prior art keywords
electrode
layer
conductive
semiconductor layer
light emitting
Prior art date
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Active
Application number
JP2012279059A
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English (en)
Japanese (ja)
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JP2013135234A5 (enExample
JP2013135234A (ja
Inventor
ナ・ミンギュ
チュー・スンホ
ジュ・ヒョンスン
ホン・ギソク
ノ・チヒ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
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LG Innotek Co Ltd
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Publication date
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Publication of JP2013135234A publication Critical patent/JP2013135234A/ja
Publication of JP2013135234A5 publication Critical patent/JP2013135234A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2012279059A 2011-12-26 2012-12-21 発光素子 Active JP6076073B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110142546A KR101883842B1 (ko) 2011-12-26 2011-12-26 발광소자 및 이를 포함하는 조명시스템
KR10-2011-0142546 2011-12-26

Publications (3)

Publication Number Publication Date
JP2013135234A JP2013135234A (ja) 2013-07-08
JP2013135234A5 JP2013135234A5 (enExample) 2016-01-21
JP6076073B2 true JP6076073B2 (ja) 2017-02-08

Family

ID=47603115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012279059A Active JP6076073B2 (ja) 2011-12-26 2012-12-21 発光素子

Country Status (5)

Country Link
US (2) US9349920B2 (enExample)
EP (1) EP2610928B1 (enExample)
JP (1) JP6076073B2 (enExample)
KR (1) KR101883842B1 (enExample)
CN (1) CN103178183B (enExample)

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JP5900284B2 (ja) 2012-10-25 2016-04-06 豊田合成株式会社 半導体発光素子および発光装置
DE102013103079A1 (de) * 2013-03-26 2014-10-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
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JP6485019B2 (ja) * 2013-12-19 2019-03-20 日亜化学工業株式会社 半導体発光素子
KR102224086B1 (ko) * 2014-06-11 2021-03-09 엘지이노텍 주식회사 발광소자 및 조명시스템
JP2016015375A (ja) * 2014-07-01 2016-01-28 株式会社タムラ製作所 発光素子
KR102239625B1 (ko) * 2014-10-29 2021-04-13 엘지이노텍 주식회사 발광 소자
KR20160051394A (ko) * 2014-11-03 2016-05-11 엘지이노텍 주식회사 발광소자 및 조명시스템
USD770989S1 (en) * 2015-02-23 2016-11-08 Seoul Viosys Co., Ltd. Light emitting diode
DE102015104144A1 (de) * 2015-03-19 2016-09-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
KR102038443B1 (ko) * 2015-03-26 2019-10-30 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
US10158047B2 (en) 2015-04-03 2018-12-18 Semicon Light Co., Ltd. Semiconductor light emitting device
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JP6665466B2 (ja) * 2015-09-26 2020-03-13 日亜化学工業株式会社 半導体発光素子及びその製造方法
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US9851056B2 (en) 2015-10-16 2017-12-26 Seoul Viosys Co., Ltd. Compact light emitting diode chip and light emitting device having a slim structure with secured durability
KR102323828B1 (ko) * 2015-10-16 2021-11-10 서울바이오시스 주식회사 소형 발광 다이오드 칩, 이를 포함하는 발광 장치 및 전자 장치
TWI641166B (zh) * 2015-10-16 2018-11-11 南韓商首爾偉傲世有限公司 小型發光二極體晶片
KR102427280B1 (ko) * 2016-01-07 2022-07-29 엘지이노텍 주식회사 발광소자 및 이를 포함하는 발광소자 어레이 모듈
KR101845611B1 (ko) * 2016-07-13 2018-04-04 고려대학교 산학협력단 발광창 전극 구조가 구비된 고효율 발광다이오드 제작 방법
CN107681032B (zh) * 2017-10-16 2024-05-10 泉州三安半导体科技有限公司 发光二极管及其制作方法
CN108470802A (zh) * 2018-03-30 2018-08-31 映瑞光电科技(上海)有限公司 一种led芯片及其制备方法
CN109473527A (zh) * 2018-11-13 2019-03-15 厦门乾照光电股份有限公司 发光二极管的半导体芯片和电流扩展方法
TWI812719B (zh) * 2019-05-20 2023-08-21 晶元光電股份有限公司 發光二極體及其製造方法
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JP7750198B2 (ja) 2022-09-29 2025-10-07 信越半導体株式会社 マイクロｌｅｄ特性評価用ウェーハ及びマイクロｌｅｄ特性評価方法

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Also Published As

Publication number Publication date
US9349920B2 (en) 2016-05-24
US10128412B2 (en) 2018-11-13
EP2610928B1 (en) 2019-02-13
CN103178183B (zh) 2018-02-09
KR101883842B1 (ko) 2018-08-01
CN103178183A (zh) 2013-06-26
EP2610928A2 (en) 2013-07-03
KR20130074471A (ko) 2013-07-04
EP2610928A3 (en) 2015-04-22
US20130161585A1 (en) 2013-06-27
US20160233384A1 (en) 2016-08-11
JP2013135234A (ja) 2013-07-08

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