JP6071613B2 - 半導体基板、半導体装置、撮像素子、および撮像装置 - Google Patents

半導体基板、半導体装置、撮像素子、および撮像装置 Download PDF

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Publication number
JP6071613B2
JP6071613B2 JP2013027057A JP2013027057A JP6071613B2 JP 6071613 B2 JP6071613 B2 JP 6071613B2 JP 2013027057 A JP2013027057 A JP 2013027057A JP 2013027057 A JP2013027057 A JP 2013027057A JP 6071613 B2 JP6071613 B2 JP 6071613B2
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JP
Japan
Prior art keywords
metal
substrate
semiconductor substrate
bonding
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013027057A
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English (en)
Japanese (ja)
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JP2014157884A5 (enExample
JP2014157884A (ja
Inventor
晴久 齊藤
晴久 齊藤
芳隆 只木
芳隆 只木
千裕 右田
千裕 右田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
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Olympus Corp
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Publication date
Application filed by Olympus Corp filed Critical Olympus Corp
Priority to JP2013027057A priority Critical patent/JP6071613B2/ja
Priority to EP14751278.4A priority patent/EP2958136A4/en
Priority to CN201480008493.1A priority patent/CN105074893A/zh
Priority to PCT/JP2014/050655 priority patent/WO2014125861A2/ja
Publication of JP2014157884A publication Critical patent/JP2014157884A/ja
Publication of JP2014157884A5 publication Critical patent/JP2014157884A5/ja
Priority to US14/823,482 priority patent/US20150357300A1/en
Application granted granted Critical
Publication of JP6071613B2 publication Critical patent/JP6071613B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H10W72/012—
    • H10W72/01215—
    • H10W72/01235—
    • H10W72/01238—
    • H10W72/01255—
    • H10W72/01257—
    • H10W72/016—
    • H10W72/01935—
    • H10W72/072—
    • H10W72/07232—
    • H10W72/07253—
    • H10W72/073—
    • H10W72/222—
    • H10W72/223—
    • H10W72/232—
    • H10W72/234—
    • H10W72/235—
    • H10W72/241—
    • H10W72/245—
    • H10W72/252—
    • H10W72/255—
    • H10W72/261—
    • H10W72/29—
    • H10W72/923—
    • H10W72/9232—
    • H10W72/9415—
    • H10W72/952—
    • H10W74/012—
    • H10W74/15—
    • H10W90/724—
    • H10W90/734—

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Wire Bonding (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP2013027057A 2013-02-14 2013-02-14 半導体基板、半導体装置、撮像素子、および撮像装置 Expired - Fee Related JP6071613B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2013027057A JP6071613B2 (ja) 2013-02-14 2013-02-14 半導体基板、半導体装置、撮像素子、および撮像装置
EP14751278.4A EP2958136A4 (en) 2013-02-14 2014-01-16 SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR ASSEMBLY, IMAGE RECORDING AND IMAGING DEVICE
CN201480008493.1A CN105074893A (zh) 2013-02-14 2014-01-16 半导体基板、半导体装置、摄像元件及摄像装置
PCT/JP2014/050655 WO2014125861A2 (ja) 2013-02-14 2014-01-16 半導体基板、半導体装置、撮像素子、および撮像装置
US14/823,482 US20150357300A1 (en) 2013-02-14 2015-08-11 Semiconductor substrate, semiconductor device, imaging element, and imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013027057A JP6071613B2 (ja) 2013-02-14 2013-02-14 半導体基板、半導体装置、撮像素子、および撮像装置

Publications (3)

Publication Number Publication Date
JP2014157884A JP2014157884A (ja) 2014-08-28
JP2014157884A5 JP2014157884A5 (enExample) 2014-10-09
JP6071613B2 true JP6071613B2 (ja) 2017-02-01

Family

ID=51354643

Family Applications (1)

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JP2013027057A Expired - Fee Related JP6071613B2 (ja) 2013-02-14 2013-02-14 半導体基板、半導体装置、撮像素子、および撮像装置

Country Status (5)

Country Link
US (1) US20150357300A1 (enExample)
EP (1) EP2958136A4 (enExample)
JP (1) JP6071613B2 (enExample)
CN (1) CN105074893A (enExample)
WO (1) WO2014125861A2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016174733A1 (ja) * 2015-04-28 2016-11-03 オリンパス株式会社 半導体装置
KR20170098462A (ko) * 2016-02-22 2017-08-30 삼성전기주식회사 패키지 및 그의 제조방법
WO2017205644A1 (en) 2016-05-26 2017-11-30 The Trustees Of The University Of Pennsylvania Laminated magnetic cores
WO2018193531A1 (ja) * 2017-04-19 2018-10-25 オリンパス株式会社 内視鏡、撮像モジュール、および撮像モジュールの製造方法
EP3870431A4 (en) 2018-10-26 2022-08-17 The Trustees of The University of Pennsylvania Patterned magnetic cores
JP2022125445A (ja) * 2021-02-17 2022-08-29 三菱電機株式会社 半導体装置及びその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62206857A (ja) * 1986-03-07 1987-09-11 Oki Electric Ind Co Ltd 突起状電極の形成方法
JPH07201864A (ja) * 1993-12-28 1995-08-04 Fujitsu Ltd 突起電極形成方法
JP3387930B2 (ja) * 1994-11-15 2003-03-17 フォームファクター，インコーポレイテッド 半導体デバイス上へのばね要素の取り付け、及びウエハレベルのテストを行う方法
JP2000138249A (ja) * 1998-10-29 2000-05-16 Matsushita Electric Ind Co Ltd 突起電極形成方法及び実装方法
JP2007258518A (ja) 2006-03-24 2007-10-04 Epson Imaging Devices Corp 半導体装置、電気光学装置及び電子機器
JP5282380B2 (ja) * 2007-08-06 2013-09-04 富士通株式会社 半導体装置およびその製造方法
CN102224579B (zh) * 2008-11-25 2013-12-04 松下电器产业株式会社 半导体装置及电子设备

Also Published As

Publication number Publication date
EP2958136A2 (en) 2015-12-23
CN105074893A (zh) 2015-11-18
EP2958136A4 (en) 2016-09-07
US20150357300A1 (en) 2015-12-10
JP2014157884A (ja) 2014-08-28
WO2014125861A2 (ja) 2014-08-21

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