JP6068954B2 - フォトダイオードアレイ - Google Patents

フォトダイオードアレイ Download PDF

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Publication number
JP6068954B2
JP6068954B2 JP2012260066A JP2012260066A JP6068954B2 JP 6068954 B2 JP6068954 B2 JP 6068954B2 JP 2012260066 A JP2012260066 A JP 2012260066A JP 2012260066 A JP2012260066 A JP 2012260066A JP 6068954 B2 JP6068954 B2 JP 6068954B2
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JP
Japan
Prior art keywords
semiconductor region
hole
semiconductor
electrode
photodiode array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012260066A
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English (en)
Japanese (ja)
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JP2014107445A (ja
JP2014107445A5 (enExample
Inventor
辰己 山中
辰己 山中
明 坂本
坂本　　明
暢郎 細川
暢郎 細川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2012260066A priority Critical patent/JP6068954B2/ja
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to PCT/JP2013/081788 priority patent/WO2014084212A1/ja
Priority to CN201380050931.6A priority patent/CN104685630B/zh
Priority to DE112013005690.9T priority patent/DE112013005690B4/de
Priority to US14/647,263 priority patent/US10418496B2/en
Priority to TW102143588A priority patent/TWI591808B/zh
Publication of JP2014107445A publication Critical patent/JP2014107445A/ja
Publication of JP2014107445A5 publication Critical patent/JP2014107445A5/ja
Application granted granted Critical
Publication of JP6068954B2 publication Critical patent/JP6068954B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2012260066A 2012-11-28 2012-11-28 フォトダイオードアレイ Active JP6068954B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2012260066A JP6068954B2 (ja) 2012-11-28 2012-11-28 フォトダイオードアレイ
CN201380050931.6A CN104685630B (zh) 2012-11-28 2013-11-26 光电二极管阵列
DE112013005690.9T DE112013005690B4 (de) 2012-11-28 2013-11-26 Fotodiodenanordnung
US14/647,263 US10418496B2 (en) 2012-11-28 2013-11-26 Photodiode array
PCT/JP2013/081788 WO2014084212A1 (ja) 2012-11-28 2013-11-26 フォトダイオードアレイ
TW102143588A TWI591808B (zh) 2012-11-28 2013-11-28 Photo diode array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012260066A JP6068954B2 (ja) 2012-11-28 2012-11-28 フォトダイオードアレイ

Publications (3)

Publication Number Publication Date
JP2014107445A JP2014107445A (ja) 2014-06-09
JP2014107445A5 JP2014107445A5 (enExample) 2015-09-10
JP6068954B2 true JP6068954B2 (ja) 2017-01-25

Family

ID=50827848

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012260066A Active JP6068954B2 (ja) 2012-11-28 2012-11-28 フォトダイオードアレイ

Country Status (6)

Country Link
US (1) US10418496B2 (enExample)
JP (1) JP6068954B2 (enExample)
CN (1) CN104685630B (enExample)
DE (1) DE112013005690B4 (enExample)
TW (1) TWI591808B (enExample)
WO (1) WO2014084212A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6068955B2 (ja) * 2012-11-28 2017-01-25 浜松ホトニクス株式会社 フォトダイオードアレイ
CN105914250B (zh) * 2016-06-12 2017-05-03 中国科学院上海技术物理研究所 一种铟镓砷短波红外探测器
CN111164728B (zh) * 2017-09-29 2023-03-17 Asml荷兰有限公司 带电粒子的多单元检测器
JP7341927B2 (ja) * 2020-03-12 2023-09-11 キオクシア株式会社 半導体記憶装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6541755B1 (en) * 1998-11-25 2003-04-01 Ricoh Company, Ltd. Near field optical probe and manufacturing method thereof
JP2001318155A (ja) * 2000-02-28 2001-11-16 Toshiba Corp 放射線検出器、およびｘ線ｃｔ装置
GB2392307B8 (en) 2002-07-26 2006-09-20 Detection Technology Oy Semiconductor structure for imaging detectors
JP2004057507A (ja) * 2002-07-29 2004-02-26 Toshiba Corp Ｘ線検出装置、貫通電極の製造方法及びｘ線断層撮影装置
US6853046B2 (en) * 2002-09-24 2005-02-08 Hamamatsu Photonics, K.K. Photodiode array and method of making the same
JP4440554B2 (ja) * 2002-09-24 2010-03-24 浜松ホトニクス株式会社 半導体装置
WO2004030102A1 (ja) 2002-09-24 2004-04-08 Hamamatsu Photonics K.K. フォトダイオードアレイ及びその製造方法
JP4247017B2 (ja) 2003-03-10 2009-04-02 浜松ホトニクス株式会社 放射線検出器の製造方法
JP4220808B2 (ja) 2003-03-10 2009-02-04 浜松ホトニクス株式会社 ホトダイオードアレイおよびその製造方法並びに放射線検出器
US7655999B2 (en) 2006-09-15 2010-02-02 Udt Sensors, Inc. High density photodiodes
US7057254B2 (en) * 2003-05-05 2006-06-06 Udt Sensors, Inc. Front illuminated back side contact thin wafer detectors
US7656001B2 (en) * 2006-11-01 2010-02-02 Udt Sensors, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
GB2449853B (en) * 2007-06-04 2012-02-08 Detection Technology Oy Photodetector for imaging system
US7791159B2 (en) * 2007-10-30 2010-09-07 Panasonic Corporation Solid-state imaging device and method for fabricating the same
JP4808760B2 (ja) * 2008-11-19 2011-11-02 浜松ホトニクス株式会社 放射線検出器の製造方法
EP2346094A1 (en) * 2010-01-13 2011-07-20 FEI Company Method of manufacturing a radiation detector
EP2592661B8 (en) * 2011-11-11 2019-05-22 ams AG Lateral avalanche photodiode device and method of production

Also Published As

Publication number Publication date
TW201431051A (zh) 2014-08-01
TWI591808B (zh) 2017-07-11
DE112013005690B4 (de) 2025-08-21
US10418496B2 (en) 2019-09-17
CN104685630B (zh) 2018-02-09
JP2014107445A (ja) 2014-06-09
DE112013005690T5 (de) 2015-10-15
WO2014084212A1 (ja) 2014-06-05
US20150311358A1 (en) 2015-10-29
CN104685630A (zh) 2015-06-03

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