CN104685630B - 光电二极管阵列 - Google Patents

光电二极管阵列 Download PDF

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Publication number
CN104685630B
CN104685630B CN201380050931.6A CN201380050931A CN104685630B CN 104685630 B CN104685630 B CN 104685630B CN 201380050931 A CN201380050931 A CN 201380050931A CN 104685630 B CN104685630 B CN 104685630B
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CN
China
Prior art keywords
semiconductor region
hole
semiconductor
photodiode array
region
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CN201380050931.6A
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English (en)
Chinese (zh)
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CN104685630A (zh
Inventor
山中辰己
坂本�明
细川畅郎
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Hamamatsu Photonics KK
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Hamamatsu Photonics KK
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Publication of CN104685630A publication Critical patent/CN104685630A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201380050931.6A 2012-11-28 2013-11-26 光电二极管阵列 Active CN104685630B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012-260066 2012-11-28
JP2012260066A JP6068954B2 (ja) 2012-11-28 2012-11-28 フォトダイオードアレイ
PCT/JP2013/081788 WO2014084212A1 (ja) 2012-11-28 2013-11-26 フォトダイオードアレイ

Publications (2)

Publication Number Publication Date
CN104685630A CN104685630A (zh) 2015-06-03
CN104685630B true CN104685630B (zh) 2018-02-09

Family

ID=50827848

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380050931.6A Active CN104685630B (zh) 2012-11-28 2013-11-26 光电二极管阵列

Country Status (6)

Country Link
US (1) US10418496B2 (enExample)
JP (1) JP6068954B2 (enExample)
CN (1) CN104685630B (enExample)
DE (1) DE112013005690B4 (enExample)
TW (1) TWI591808B (enExample)
WO (1) WO2014084212A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6068955B2 (ja) * 2012-11-28 2017-01-25 浜松ホトニクス株式会社 フォトダイオードアレイ
CN105914250B (zh) * 2016-06-12 2017-05-03 中国科学院上海技术物理研究所 一种铟镓砷短波红外探测器
CN111164728B (zh) * 2017-09-29 2023-03-17 Asml荷兰有限公司 带电粒子的多单元检测器
JP7341927B2 (ja) * 2020-03-12 2023-09-11 キオクシア株式会社 半導体記憶装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001318155A (ja) * 2000-02-28 2001-11-16 Toshiba Corp 放射線検出器、およびｘ線ｃｔ装置
CN1685513A (zh) * 2002-09-24 2005-10-19 浜松光子学株式会社 光电二极管阵列及其制造方法
CN1759485A (zh) * 2003-03-10 2006-04-12 浜松光子学株式会社 光电二极管阵列及其制造方法和放射线检测器
CN1759484A (zh) * 2003-03-10 2006-04-12 浜松光子学株式会社 光电二极管阵列及其制造方法和放射线检测器

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6541755B1 (en) * 1998-11-25 2003-04-01 Ricoh Company, Ltd. Near field optical probe and manufacturing method thereof
GB2392307B8 (en) 2002-07-26 2006-09-20 Detection Technology Oy Semiconductor structure for imaging detectors
JP2004057507A (ja) * 2002-07-29 2004-02-26 Toshiba Corp Ｘ線検出装置、貫通電極の製造方法及びｘ線断層撮影装置
US6853046B2 (en) * 2002-09-24 2005-02-08 Hamamatsu Photonics, K.K. Photodiode array and method of making the same
JP4440554B2 (ja) * 2002-09-24 2010-03-24 浜松ホトニクス株式会社 半導体装置
US7655999B2 (en) 2006-09-15 2010-02-02 Udt Sensors, Inc. High density photodiodes
US7057254B2 (en) * 2003-05-05 2006-06-06 Udt Sensors, Inc. Front illuminated back side contact thin wafer detectors
US7656001B2 (en) * 2006-11-01 2010-02-02 Udt Sensors, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
GB2449853B (en) * 2007-06-04 2012-02-08 Detection Technology Oy Photodetector for imaging system
US7791159B2 (en) * 2007-10-30 2010-09-07 Panasonic Corporation Solid-state imaging device and method for fabricating the same
JP4808760B2 (ja) * 2008-11-19 2011-11-02 浜松ホトニクス株式会社 放射線検出器の製造方法
EP2346094A1 (en) * 2010-01-13 2011-07-20 FEI Company Method of manufacturing a radiation detector
EP2592661B8 (en) * 2011-11-11 2019-05-22 ams AG Lateral avalanche photodiode device and method of production

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001318155A (ja) * 2000-02-28 2001-11-16 Toshiba Corp 放射線検出器、およびｘ線ｃｔ装置
CN1685513A (zh) * 2002-09-24 2005-10-19 浜松光子学株式会社 光电二极管阵列及其制造方法
CN1759485A (zh) * 2003-03-10 2006-04-12 浜松光子学株式会社 光电二极管阵列及其制造方法和放射线检测器
CN1759484A (zh) * 2003-03-10 2006-04-12 浜松光子学株式会社 光电二极管阵列及其制造方法和放射线检测器

Also Published As

Publication number Publication date
TW201431051A (zh) 2014-08-01
TWI591808B (zh) 2017-07-11
DE112013005690B4 (de) 2025-08-21
US10418496B2 (en) 2019-09-17
JP2014107445A (ja) 2014-06-09
JP6068954B2 (ja) 2017-01-25
DE112013005690T5 (de) 2015-10-15
WO2014084212A1 (ja) 2014-06-05
US20150311358A1 (en) 2015-10-29
CN104685630A (zh) 2015-06-03

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