DE112013005690B4 - Fotodiodenanordnung - Google Patents

Fotodiodenanordnung

Info

Publication number
DE112013005690B4
DE112013005690B4 DE112013005690.9T DE112013005690T DE112013005690B4 DE 112013005690 B4 DE112013005690 B4 DE 112013005690B4 DE 112013005690 T DE112013005690 T DE 112013005690T DE 112013005690 B4 DE112013005690 B4 DE 112013005690B4
Authority
DE
Germany
Prior art keywords
semiconductor region
semiconductor
region
hole
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE112013005690.9T
Other languages
German (de)
English (en)
Other versions
DE112013005690T5 (de
Inventor
Tatsumi Yamanaka
Akira Sakamoto
Noburo Hosokawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of DE112013005690T5 publication Critical patent/DE112013005690T5/de
Application granted granted Critical
Publication of DE112013005690B4 publication Critical patent/DE112013005690B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE112013005690.9T 2012-11-28 2013-11-26 Fotodiodenanordnung Active DE112013005690B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012-260066 2012-11-28
JP2012260066A JP6068954B2 (ja) 2012-11-28 2012-11-28 フォトダイオードアレイ
PCT/JP2013/081788 WO2014084212A1 (ja) 2012-11-28 2013-11-26 フォトダイオードアレイ

Publications (2)

Publication Number Publication Date
DE112013005690T5 DE112013005690T5 (de) 2015-10-15
DE112013005690B4 true DE112013005690B4 (de) 2025-08-21

Family

ID=50827848

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112013005690.9T Active DE112013005690B4 (de) 2012-11-28 2013-11-26 Fotodiodenanordnung

Country Status (6)

Country Link
US (1) US10418496B2 (enExample)
JP (1) JP6068954B2 (enExample)
CN (1) CN104685630B (enExample)
DE (1) DE112013005690B4 (enExample)
TW (1) TWI591808B (enExample)
WO (1) WO2014084212A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6068955B2 (ja) * 2012-11-28 2017-01-25 浜松ホトニクス株式会社 フォトダイオードアレイ
CN105914250B (zh) * 2016-06-12 2017-05-03 中国科学院上海技术物理研究所 一种铟镓砷短波红外探测器
CN111164728B (zh) * 2017-09-29 2023-03-17 Asml荷兰有限公司 带电粒子的多单元检测器
JP7341927B2 (ja) * 2020-03-12 2023-09-11 キオクシア株式会社 半導体記憶装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040129992A1 (en) 2002-09-24 2004-07-08 Hamamatsu Photonics K.K. Photodiode array and method of making the same
US20090108391A1 (en) 2007-10-30 2009-04-30 Toshihiro Kuriyama Solid-state imaging device and method for fabricating the same
US20100200940A1 (en) 2007-06-04 2010-08-12 Fan Ji Photodetector for Imaging System

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6541755B1 (en) * 1998-11-25 2003-04-01 Ricoh Company, Ltd. Near field optical probe and manufacturing method thereof
JP2001318155A (ja) * 2000-02-28 2001-11-16 Toshiba Corp 放射線検出器、およびｘ線ｃｔ装置
GB2392307B8 (en) 2002-07-26 2006-09-20 Detection Technology Oy Semiconductor structure for imaging detectors
JP2004057507A (ja) * 2002-07-29 2004-02-26 Toshiba Corp Ｘ線検出装置、貫通電極の製造方法及びｘ線断層撮影装置
JP4440554B2 (ja) * 2002-09-24 2010-03-24 浜松ホトニクス株式会社 半導体装置
WO2004030102A1 (ja) 2002-09-24 2004-04-08 Hamamatsu Photonics K.K. フォトダイオードアレイ及びその製造方法
JP4247017B2 (ja) 2003-03-10 2009-04-02 浜松ホトニクス株式会社 放射線検出器の製造方法
JP4220808B2 (ja) 2003-03-10 2009-02-04 浜松ホトニクス株式会社 ホトダイオードアレイおよびその製造方法並びに放射線検出器
US7655999B2 (en) 2006-09-15 2010-02-02 Udt Sensors, Inc. High density photodiodes
US7057254B2 (en) * 2003-05-05 2006-06-06 Udt Sensors, Inc. Front illuminated back side contact thin wafer detectors
US7656001B2 (en) * 2006-11-01 2010-02-02 Udt Sensors, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
JP4808760B2 (ja) * 2008-11-19 2011-11-02 浜松ホトニクス株式会社 放射線検出器の製造方法
EP2346094A1 (en) * 2010-01-13 2011-07-20 FEI Company Method of manufacturing a radiation detector
EP2592661B8 (en) * 2011-11-11 2019-05-22 ams AG Lateral avalanche photodiode device and method of production

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040129992A1 (en) 2002-09-24 2004-07-08 Hamamatsu Photonics K.K. Photodiode array and method of making the same
US20100200940A1 (en) 2007-06-04 2010-08-12 Fan Ji Photodetector for Imaging System
US20090108391A1 (en) 2007-10-30 2009-04-30 Toshihiro Kuriyama Solid-state imaging device and method for fabricating the same

Also Published As

Publication number Publication date
TW201431051A (zh) 2014-08-01
TWI591808B (zh) 2017-07-11
US10418496B2 (en) 2019-09-17
CN104685630B (zh) 2018-02-09
JP2014107445A (ja) 2014-06-09
JP6068954B2 (ja) 2017-01-25
DE112013005690T5 (de) 2015-10-15
WO2014084212A1 (ja) 2014-06-05
US20150311358A1 (en) 2015-10-29
CN104685630A (zh) 2015-06-03

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