JP2014107445A5 - - Google Patents

Download PDF

Info

Publication number
JP2014107445A5
JP2014107445A5 JP2012260066A JP2012260066A JP2014107445A5 JP 2014107445 A5 JP2014107445 A5 JP 2014107445A5 JP 2012260066 A JP2012260066 A JP 2012260066A JP 2012260066 A JP2012260066 A JP 2012260066A JP 2014107445 A5 JP2014107445 A5 JP 2014107445A5
Authority
JP
Japan
Prior art keywords
semiconductor region
semiconductor
photodiode array
surface side
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012260066A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014107445A (ja
JP6068954B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2012260066A external-priority patent/JP6068954B2/ja
Priority to JP2012260066A priority Critical patent/JP6068954B2/ja
Priority to PCT/JP2013/081788 priority patent/WO2014084212A1/ja
Priority to DE112013005690.9T priority patent/DE112013005690B4/de
Priority to US14/647,263 priority patent/US10418496B2/en
Priority to CN201380050931.6A priority patent/CN104685630B/zh
Priority to TW102143588A priority patent/TWI591808B/zh
Publication of JP2014107445A publication Critical patent/JP2014107445A/ja
Publication of JP2014107445A5 publication Critical patent/JP2014107445A5/ja
Publication of JP6068954B2 publication Critical patent/JP6068954B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2012260066A 2012-11-28 2012-11-28 フォトダイオードアレイ Active JP6068954B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2012260066A JP6068954B2 (ja) 2012-11-28 2012-11-28 フォトダイオードアレイ
CN201380050931.6A CN104685630B (zh) 2012-11-28 2013-11-26 光电二极管阵列
DE112013005690.9T DE112013005690B4 (de) 2012-11-28 2013-11-26 Fotodiodenanordnung
US14/647,263 US10418496B2 (en) 2012-11-28 2013-11-26 Photodiode array
PCT/JP2013/081788 WO2014084212A1 (ja) 2012-11-28 2013-11-26 フォトダイオードアレイ
TW102143588A TWI591808B (zh) 2012-11-28 2013-11-28 Photo diode array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012260066A JP6068954B2 (ja) 2012-11-28 2012-11-28 フォトダイオードアレイ

Publications (3)

Publication Number Publication Date
JP2014107445A JP2014107445A (ja) 2014-06-09
JP2014107445A5 true JP2014107445A5 (enExample) 2015-09-10
JP6068954B2 JP6068954B2 (ja) 2017-01-25

Family

ID=50827848

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012260066A Active JP6068954B2 (ja) 2012-11-28 2012-11-28 フォトダイオードアレイ

Country Status (6)

Country Link
US (1) US10418496B2 (enExample)
JP (1) JP6068954B2 (enExample)
CN (1) CN104685630B (enExample)
DE (1) DE112013005690B4 (enExample)
TW (1) TWI591808B (enExample)
WO (1) WO2014084212A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6068955B2 (ja) * 2012-11-28 2017-01-25 浜松ホトニクス株式会社 フォトダイオードアレイ
CN105914250B (zh) * 2016-06-12 2017-05-03 中国科学院上海技术物理研究所 一种铟镓砷短波红外探测器
CN111164728B (zh) * 2017-09-29 2023-03-17 Asml荷兰有限公司 带电粒子的多单元检测器
JP7341927B2 (ja) * 2020-03-12 2023-09-11 キオクシア株式会社 半導体記憶装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6541755B1 (en) * 1998-11-25 2003-04-01 Ricoh Company, Ltd. Near field optical probe and manufacturing method thereof
JP2001318155A (ja) * 2000-02-28 2001-11-16 Toshiba Corp 放射線検出器、およびｘ線ｃｔ装置
GB2392307B8 (en) 2002-07-26 2006-09-20 Detection Technology Oy Semiconductor structure for imaging detectors
JP2004057507A (ja) * 2002-07-29 2004-02-26 Toshiba Corp Ｘ線検出装置、貫通電極の製造方法及びｘ線断層撮影装置
US6853046B2 (en) * 2002-09-24 2005-02-08 Hamamatsu Photonics, K.K. Photodiode array and method of making the same
JP4440554B2 (ja) * 2002-09-24 2010-03-24 浜松ホトニクス株式会社 半導体装置
WO2004030102A1 (ja) 2002-09-24 2004-04-08 Hamamatsu Photonics K.K. フォトダイオードアレイ及びその製造方法
JP4247017B2 (ja) 2003-03-10 2009-04-02 浜松ホトニクス株式会社 放射線検出器の製造方法
JP4220808B2 (ja) 2003-03-10 2009-02-04 浜松ホトニクス株式会社 ホトダイオードアレイおよびその製造方法並びに放射線検出器
US7655999B2 (en) 2006-09-15 2010-02-02 Udt Sensors, Inc. High density photodiodes
US7057254B2 (en) * 2003-05-05 2006-06-06 Udt Sensors, Inc. Front illuminated back side contact thin wafer detectors
US7656001B2 (en) * 2006-11-01 2010-02-02 Udt Sensors, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
GB2449853B (en) * 2007-06-04 2012-02-08 Detection Technology Oy Photodetector for imaging system
US7791159B2 (en) * 2007-10-30 2010-09-07 Panasonic Corporation Solid-state imaging device and method for fabricating the same
JP4808760B2 (ja) * 2008-11-19 2011-11-02 浜松ホトニクス株式会社 放射線検出器の製造方法
EP2346094A1 (en) * 2010-01-13 2011-07-20 FEI Company Method of manufacturing a radiation detector
EP2592661B8 (en) * 2011-11-11 2019-05-22 ams AG Lateral avalanche photodiode device and method of production

Similar Documents

Publication Publication Date Title
WO2016064134A3 (en) Light emitting device and method of fabricating the same
EP2538462A3 (en) Light emitting device module
JP2011003608A5 (enExample)
JP2013211537A5 (enExample)
WO2014197370A3 (en) Sensor package with exposed sensor array and method of making same
EP2879189A3 (en) Solar cell and method of manufacturing the same
JP2015173289A5 (enExample)
JP2014096591A5 (enExample)
EP2731137A3 (en) Light emitting device
JP2015122525A5 (enExample)
JP2013229598A5 (enExample)
JP2014053606A5 (enExample)
JP2012227137A5 (ja) 発光装置
AR086303A1 (es) Parabrisas con un elemento de conexion electrica
JP2013118179A5 (ja) 発光モジュール
JP2009059921A5 (enExample)
JP2013135234A5 (enExample)
JP2014515560A5 (enExample)
EP1811578A4 (en) AVALANCHE PHOTODIODE
JP2014039039A5 (enExample)
JP2020526004A5 (enExample)
EP2722899A3 (en) Light emitting device
JP2012175067A5 (enExample)
JP2012216514A5 (ja) 発光装置
JP2012216522A5 (ja) 発光装置