JP6068662B2 - 真空処理装置、真空処理方法、磁気抵抗効果素子の製造方法および磁気抵抗効果素子の製造装置 - Google Patents

真空処理装置、真空処理方法、磁気抵抗効果素子の製造方法および磁気抵抗効果素子の製造装置 Download PDF

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JP6068662B2
JP6068662B2 JP2015538839A JP2015538839A JP6068662B2 JP 6068662 B2 JP6068662 B2 JP 6068662B2 JP 2015538839 A JP2015538839 A JP 2015538839A JP 2015538839 A JP2015538839 A JP 2015538839A JP 6068662 B2 JP6068662 B2 JP 6068662B2
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Japan
Prior art keywords
gas
substrate
vacuum
vacuum processing
vacuum vessel
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Japanese (ja)
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JPWO2015045212A1 (ja
Inventor
正人 品田
正人 品田
太一 廣見
太一 廣見
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Canon Anelva Corp
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Canon Anelva Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/091—Constructional adaptation of the sensor to specific applications
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Formation Of Insulating Films (AREA)
JP2015538839A 2013-09-25 2014-05-26 真空処理装置、真空処理方法、磁気抵抗効果素子の製造方法および磁気抵抗効果素子の製造装置 Active JP6068662B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013198827 2013-09-25
JP2013198827 2013-09-25
PCT/JP2014/002743 WO2015045212A1 (fr) 2013-09-25 2014-05-26 Appareil de traitement sous vide, procédé de traitement sous vide, procédé pour fabriquer un élément à effet de résistance magnétique, et appareil pour fabriquer un élément à effet de résistance magnétique

Publications (2)

Publication Number Publication Date
JP6068662B2 true JP6068662B2 (ja) 2017-01-25
JPWO2015045212A1 JPWO2015045212A1 (ja) 2017-03-09

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JP2015538839A Active JP6068662B2 (ja) 2013-09-25 2014-05-26 真空処理装置、真空処理方法、磁気抵抗効果素子の製造方法および磁気抵抗効果素子の製造装置

Country Status (3)

Country Link
JP (1) JP6068662B2 (fr)
TW (1) TWI545661B (fr)
WO (1) WO2015045212A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6700165B2 (ja) * 2016-12-22 2020-05-27 東京エレクトロン株式会社 成膜装置および成膜方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04370924A (ja) * 1991-06-20 1992-12-24 Fujitsu Ltd Ｃｖｄ装置
JP2005142234A (ja) * 2003-11-04 2005-06-02 Canon Inc 処理装置及び方法
WO2011081203A1 (fr) * 2009-12-28 2011-07-07 キヤノンアネルバ株式会社 Procédé pour la fabrication d'un élément magnétorésistif

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04370924A (ja) * 1991-06-20 1992-12-24 Fujitsu Ltd Ｃｖｄ装置
JP2005142234A (ja) * 2003-11-04 2005-06-02 Canon Inc 処理装置及び方法
WO2011081203A1 (fr) * 2009-12-28 2011-07-07 キヤノンアネルバ株式会社 Procédé pour la fabrication d'un élément magnétorésistif

Also Published As

Publication number Publication date
WO2015045212A1 (fr) 2015-04-02
JPWO2015045212A1 (ja) 2017-03-09
TW201530664A (zh) 2015-08-01
TWI545661B (zh) 2016-08-11

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