WO2015045212A1 - Appareil de traitement sous vide, procédé de traitement sous vide, procédé pour fabriquer un élément à effet de résistance magnétique, et appareil pour fabriquer un élément à effet de résistance magnétique - Google Patents

Appareil de traitement sous vide, procédé de traitement sous vide, procédé pour fabriquer un élément à effet de résistance magnétique, et appareil pour fabriquer un élément à effet de résistance magnétique Download PDF

Info

Publication number
WO2015045212A1
WO2015045212A1 PCT/JP2014/002743 JP2014002743W WO2015045212A1 WO 2015045212 A1 WO2015045212 A1 WO 2015045212A1 JP 2014002743 W JP2014002743 W JP 2014002743W WO 2015045212 A1 WO2015045212 A1 WO 2015045212A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
substrate
vacuum vessel
vacuum
vacuum processing
Prior art date
Application number
PCT/JP2014/002743
Other languages
English (en)
Japanese (ja)
Inventor
正人 品田
太一 廣見
Original Assignee
キヤノンアネルバ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by キヤノンアネルバ株式会社 filed Critical キヤノンアネルバ株式会社
Priority to JP2015538839A priority Critical patent/JP6068662B2/ja
Priority to TW103132794A priority patent/TWI545661B/zh
Publication of WO2015045212A1 publication Critical patent/WO2015045212A1/fr

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/091—Constructional adaptation of the sensor to specific applications
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment

Definitions

  • the present invention relates to a vacuum processing apparatus, a vacuum processing method, a magnetoresistive effect element manufacturing method, and a magnetoresistive effect element manufacturing apparatus.
  • the magnetoresistive effect type magnetic head is a read-only magnetic head using a magnetoresistive effect element as a magnetic sensitive element, and has been put into practical use as a reproduction unit of a hard disk drive or the like.
  • TMR Tunnelneling Magneto Resistance
  • the TMR element has a multilayer structure in which a very thin insulator serving as a tunnel barrier is sandwiched between ferromagnetic metal electrodes, and the magnetization direction of the ferromagnetic metal electrode sandwiching the insulator is opposite to that when parallel.
  • the effect of changing the electrical resistance of the TMR element when parallel (TMR effect) is used.
  • MgO is used as an insulator of the TMR element, and the quality of MgO greatly affects the performance of the magnetic head.
  • MgO As the formation process of MgO, there are a formation process of MgO by RF sputtering and a formation process of oxidizing by flowing oxygen after forming Mg. In the latter case, for example, after the Mg single film is formed, the substrate is transferred to a vacuum vessel for oxidation treatment, and MgO is formed by flowing oxygen.
  • the size of the lead sensor has become smaller, and accordingly the specific resistance of the sensor itself has to be reduced. That is, it is necessary to make the film thickness of the insulator MgO very thin. Specifically, an MgO film thickness of 1 nm or less is required. There is also a need for improved film thickness uniformity.
  • FIGS. 10A and 10B are diagrams illustrating the configuration of a conventional vacuum processing apparatus.
  • a conventional vacuum processing apparatus for oxidation treatment introduces a gas from an opening 1003 provided in a ring (hereinafter referred to as a gas ring) above a substrate (FIG. 10A).
  • a shower plate 1007 in which a plurality of openings 1009 are formed at a predetermined pitch is arranged above the substrate, and a gas obtained by dispersing the gas from the supply port 1006 through the openings 1009 is introduced toward the substrate 1008. Yes (see FIG. 10B: Patent Document 1).
  • the effect of the reached particle distribution did not appear remarkably, but in the case of an extremely thin film of 1 nm or less, the reached particle distribution is strongly reflected in the film thickness distribution.
  • the distribution of oxygen reaching the substrate affects the MgO film thickness distribution.
  • the gas when the gas is introduced using the gas ring 1001, the gas is supplied from the outside of the vacuum processing apparatus via the pipe 1002.
  • the supplied gas flows through the hollow gas ring 1001, and the gas is introduced into the vacuum container from the opening 1003 provided along the outer periphery of the gas ring 1001.
  • the introduced gas reaches the substrate 1004 and is then exhausted by the pump 1005.
  • the distribution of the gas reaching the substrate 1008 tends to be biased near the supply port 1006 for supplying the gas.
  • a substrate mounting portion exists between the supply port 1006 and the exhaust port communicating with the pump 1010.
  • the gas introduced through the shower plate 1007 from the supply port 1006 located above the substrate platform flows toward the substrate platform.
  • the gas flows from the center of the substrate platform to the side surface of the substrate platform, and is exhausted from an exhaust port communicating with a pump 1010 provided below the substrate platform. Is done.
  • the pressure at the central portion of the substrate 1008 placed on the substrate placement portion tends to increase locally.
  • a pressure gradient is generated on the surface of the substrate 1008, and the distribution of particles reaching the substrate 1008 becomes non-uniform.
  • the position where the gas is introduced, the direction in which the gas is introduced, and the structure inside the vacuum vessel have a great influence on the gas distribution on the substrate surface (distribution of reached particles). It was difficult to introduce.
  • the conventional MFC, the vacuum processing apparatus using the gas ring 1001 and the shower plate 1007 cannot obtain a very thin insulator film thickness and a satisfactory film thickness distribution.
  • the present invention has been made in view of the above-mentioned problems of the prior art, and the reactive gas pressure during the formation of the insulator is reduced and the pressure distribution is made uniform, that is, the reactive gas particles reaching the substrate surface are more than conventional.
  • a vacuum processing technique capable of forming an insulator serving as a tunnel barrier having an extremely thin and uniform film thickness by uniformly supplying a small amount.
  • a vacuum processing apparatus includes: a vacuum container capable of depressurization to which an exhaust means is connected; and a substrate mounting surface on which a substrate placed in the vacuum container is mounted.
  • a vacuum processing apparatus comprising: a substrate holder provided; and a gas introduction means having a gas introduction port for introducing a reactive gas into the vacuum vessel, The gas inlet is a position where molecules of the reactive gas released from the gas inlet into the vacuum vessel are blocked from linearly reaching the substrate mounting surface from the gas inlet.
  • the reactive gas is disposed at a position on a substantial central axis of the substrate mounting surface, and the reactive gas reaches the substrate mounting surface by diffusion of a molecular flow.
  • the present invention in the TMR element, it is possible to reduce the pressure of the insulating material, for example, the oxygen distribution pressure during the formation of MgO, and to make it uniform, and to improve the film thickness distribution of the insulating material. Can be formed.
  • the pressure of the insulating material for example, the oxygen distribution pressure during the formation of MgO
  • FIG. 1A is a diagram showing a schematic cross-sectional configuration of the vacuum processing apparatus of the first embodiment.
  • the vacuum processing apparatus can be used for manufacturing a magnetoresistive effect element (magnetoresistance device), and includes a vacuum container 101 for performing an insulator formation process.
  • magnetoresistive effect element magnetoresistance device
  • a predetermined formation process is performed in another vacuum vessel, and the substrate 102 having a metal film (for example, Mg film) formed on the substrate surface is carried into the vacuum vessel 101.
  • an insulator formation process for example, an insulation process
  • an insulator for example, MgO
  • the substrate 102 that has been subjected to the insulator formation process is carried out of the vacuum vessel 101.
  • the illustration of the transfer unit that carries in and out the substrate 102 is omitted.
  • a substrate holder 103 (substrate stage) having a substrate placement surface on which a substrate 102 to be processed can be placed inside the vacuum vessel 101, and a gas (for example, oxygen gas or the like) inside the vacuum vessel 101
  • a gas for example, oxygen gas or the like
  • This pipe functions as a gas introduction unit 104 that introduces gas from the gas introduction source 108 into the vacuum vessel 101.
  • the gas introduction unit 104 includes a gas introduction port 150 for introducing a reactive gas into the vacuum vessel 101.
  • the gas introduction unit 104 is provided with an MFC for controlling the gas supply amount.
  • the vacuum processing apparatus is provided with a pump 105 (turbo molecular pump) for bringing the inside of the vacuum vessel 101 into a predetermined vacuum state.
  • the inside of the vacuum vessel 101 can be depressurized to a low pressure of 1 ⁇ 10 ⁇ 5 Pa or less by the pump 105.
  • the valve unit includes a plate-like valve body 106, and the moving unit 107 can move the valve body 106 of the valve unit in the vertical direction. In a state where the valve body 106 is moved downward by the moving unit 107 (lowered state), the valve body closes the exhaust port 160, and the inside of the vacuum vessel 101 is airtight.
  • the exhaust port 160 is opened in a state where the valve body 106 is moved upward by the moving unit 107 (upward state), and the pump 105 connected to the tip of the exhaust port 160 communicates with the inside of the vacuum vessel 101. .
  • the pump 105 exhausts the gas introduced from the gas introduction unit 104 through the exhaust port 160.
  • the exhaust flow rate of the pump 105 can be controlled, whereby the oxygen supply amount of the gas introduced into the vacuum vessel 101 can be controlled.
  • the exhaust port 160 and the pump 105 function as an exhaust unit capable of reducing the pressure inside the vacuum vessel 101.
  • FIG. 1B is a diagram illustrating the flow of the vacuum processing method of the vacuum processing apparatus according to the embodiment.
  • the vacuum processing method of the vacuum processing apparatus includes the following steps.
  • step S1 the substrate 102 is placed on the substrate holder 103.
  • a reactive gas is introduced from the gas introduction port 150 of the gas introduction unit 104.
  • the reactive gas molecules released from the gas inlet into the vacuum chamber 101 are shielded from reaching the surface of the substrate 102 linearly from the gas inlet, and the substantial center of the surface of the substrate.
  • a reaction gas is introduced into the vacuum chamber from a gas inlet arranged at a position on the shaft.
  • the reactive gas to be introduced is, for example, oxygen gas.
  • the molecules of the reactive gas released from the gas inlet 150 into the vacuum vessel 101 are shielded by the valve body 106.
  • a shielding member different from the back surface of the substrate holder 103, the upper surface of the vacuum vessel, and the valve body 106 may be used. Is possible. A configuration example of the shielding structure will be specifically described later in the second to sixth embodiments.
  • step S3 the gas is allowed to reach the substrate mounting surface of the substrate holder 103 by the diffusion of the molecular flow.
  • a metal film is formed on the substrate surface of the substrate 102 placed in the previous step S1, and in step S4, the metal film is insulated (for example, oxidized) by the gas.
  • the method of manufacturing a magnetoresistive element includes a step of forming a tunnel barrier layer made of an insulator (for example, MgO) using the vacuum processing method of steps S1 to S3 described above.
  • a tunnel barrier layer made of an insulator for example, MgO
  • the vacuum processing method it is possible to improve the film thickness distribution of the insulating material (for example, MgO) to be formed, and to reduce and equalize the gas pressure during the formation.
  • the method of manufacturing a magnetoresistive effect element using a vacuum processing method it is possible to form an insulator of an extremely thin film having a thickness of 1 nm or less, for example, and to provide a higher quality magnetoresistive effect element (TMR element). Is possible.
  • gas is introduced from a single gas inlet that is aligned with the central axis of the substrate in a manner that does not directly hit the substrate, and the gas is concentrically drawn from the central axis into the vacuum vessel. It is preferable that the insulating treatment is performed with oxygen particles of the gas that has been diffused by the gas and reaches the substrate. Further, in order to suppress the generation of a pressure gradient due to the position of the exhaust port 160 and to allow oxygen particles to reach the substrate uniformly, the exhaust port 160 should be disposed directly below the substrate holder along the central axis of the substrate 102. good.
  • oxygen which is a reactive gas
  • one gas inlet 150 by a method that does not directly hit the substrate 102 and the exhaust port 160 be arranged directly below the substrate holder along the central axis of the substrate. Conceivable.
  • the mean free path in the assumed use state of the vacuum vessel 101 is sufficiently longer than the diameter of the vacuum vessel 101, it is considered that oxygen particles reach the wall surface of the vacuum vessel 101 almost without collision and are reflected (vacuum vessel Ignore wall adsorption probability). Since it is considered that the particles reflected by the wall surface also reach the substrate, it is desirable that the side surface of the vacuum vessel 101 is also circular in order to allow oxygen particles to uniformly reach the circular substrate.
  • FIG. 2 is a cross-sectional view showing a schematic configuration of the vacuum processing apparatus according to the first embodiment.
  • the gas introduction unit 104 introduces gas from the outside of the vacuum vessel 101 into the vacuum vessel via a pipe.
  • a gas introduction port 150 provided at the tip of the gas introduction unit 104 is disposed between the substrate holder 103 and the valve body 106 so as to coincide with the central axis of the substrate 102.
  • the term “match” refers to a substantial match that takes into account tolerances when processing or assembling parts, and is not limited to a physical perfect match (the same applies to the embodiments described below). .
  • the gas inlet 150 is provided with one opening for releasing a reactive gas in the vacuum vessel 101.
  • the insulator forming process is performed by utilizing the diffusion phenomenon of the molecular flow caused by applying the gas to the valve body 106.
  • the cross-sectional shape of the vacuum vessel 101 is circular, and the cross-sectional shape of the vacuum vessel 101, the substrate holder 103 arranged in the vacuum vessel 101, and the substrate 102 placed on the substrate holder 103 are concentric. By making the cross-sectional shape of the vacuum vessel and the substrate holder 103 and the substrate 102 concentric, uniform gas diffusion is possible.
  • the inside of the vacuum vessel 101 is spherical as a configuration in which reactive gas (for example, oxygen) particles uniformly reach the circular substrate. You may comprise.
  • the gas inlet 150 faces downward and faces the valve element 106. However, if the substrate holder 103 and other shielding members are arranged so that the gas is not directly applied to the substrate.
  • the gas inlet 150 may be arranged upward. A configuration example in which the direction of the gas inlet 150 is changed and a configuration example using a shielding member will be described in later embodiments.
  • the gas inlet 150 is arranged facing the valve body 106 side, and gas is introduced from the gas inlet 150.
  • Arrows 201 and 202 in FIG. 2 schematically show how the introduced gas diffuses in the vacuum vessel 101.
  • the gas introduced from the gas introduction port 150 reaches the valve body 106 and then diffuses from the center of the valve body 106 in the outer peripheral direction (left-right direction in FIG. 2). Then, after reaching the vicinity of the side surface of the vacuum vessel 101, it diffuses into a gas (arrow 201) directed upward of the vacuum vessel and a gas (arrow 202) directed downward of the vacuum vessel.
  • the gas (arrow 202) heading below the vacuum vessel is exhausted by the pump 105 from the exhaust port 160.
  • the gas that diffuses in the vacuum vessel 101 and reaches the substrate 102 decreases, and the reactive gas (for example, oxygen) pressure during the formation of the insulating film is reduced. can do.
  • the gas (arrow 201) heading above the vacuum vessel diffuses above the substrate in the vacuum vessel and reaches the substrate.
  • the oxygen particles of the gas (arrow 201) reach the center of the substrate 102 in order from the end of the substrate 102 by introducing the gas from below the substrate 102. Due to such gas diffusion, the distribution of the diffused particles becomes uniform, and the film thickness distribution of the formed insulator can be improved.
  • FIG. 9 is a diagram showing the pressure distribution of the gas introduced from one gas inlet 150 aligned with the central axis of the substrate.
  • the horizontal axis indicates the length (m) of the valve body 106
  • the vertical axis indicates the pressure (Pa). From this figure, it can be seen that the central portion of the valve body 106 is a position corresponding to the gas inlet 150, and the pressure peaks in the vicinity of the central portion of the valve body 106, resulting in an even pressure distribution on the left and right. It is possible to cause uniform gas diffusion (201, 202 in FIG. 2) due to the uniform pressure gradient.
  • FIG. 8 is a diagram showing a simulation result of a pressure distribution performed for comparing the configuration of the conventional example and the configuration according to the embodiment.
  • Reference numeral 801 denotes a case where a shower plate is used
  • reference numeral 802 denotes a case where a ring (gas ring) is used
  • reference numeral 803 denotes a simulation result when the configuration of the present embodiment (single point gas introduction at the substrate stage) is used.
  • Reference numeral 804 denotes a simulation result when the configuration of the second embodiment described later is used, which will be described in detail later.
  • the conditions used for the simulation are as follows.
  • the configuration of the present embodiment it is possible to improve the film thickness distribution of the insulator. It is also possible to reduce the oxygen distribution pressure during formation.
  • FIG. 3 is a cross-sectional view showing a schematic configuration of a vacuum processing apparatus according to the second embodiment.
  • the gas introduction unit 104 introduces gas (for example, reactive gas such as oxygen gas) from the outside of the vacuum vessel 101 into the vacuum vessel via a pipe.
  • An opening is provided in the central part of the valve body 106, and the gas introduction part 104 is inserted into the opening, and the gas introduction port 150 protrudes below the valve body 106.
  • the moving unit 107 can move the valve body 106 in a state where the gas introduction unit 104 is inserted. In a state where the valve body 106 is moved downward (lowered state) by the moving unit 107, the valve body 106 closes the exhaust port 160, and the inside of the vacuum vessel 101 is airtight.
  • the exhaust port 160 is opened in a state where the valve body 106 is moved upward by the moving unit 107 (upward state), and the pump 105 connected to the tip of the exhaust port 160 communicates with the inside of the vacuum vessel 101. .
  • the gas inlet 150 that protrudes downward from the valve body 106 is disposed so as to coincide with the central axis of the substrate holder 103 and the substrate 102.
  • gas is introduced downward from the gas inlet 150 below the valve body 106.
  • Arrows 301 and 302 in FIG. 3 schematically show how the introduced gas diffuses in the vacuum vessel 101.
  • the gas introduced from the gas inlet 150 is divided into a gas (arrow 301) directed upward of the vacuum vessel 101 and a gas (arrow 302) directed downward of the vacuum vessel.
  • the gas (arrow 302) heading below the vacuum vessel is exhausted by the pump 105 from the exhaust port.
  • the gas that diffuses in the vacuum vessel 101 and reaches the substrate 102 is reduced, and the oxygen distribution pressure at the time of formation can be reduced.
  • the gas (arrow 301) heading above the vacuum vessel diffuses above the substrate in the vacuum vessel and reaches the substrate.
  • the oxygen particles of the gas (arrow 301) sequentially reach the center of the substrate 102 from the end of the substrate 102. Due to such gas diffusion, the distribution of the diffusion particles becomes uniform, and the film thickness distribution of the formed insulator can be improved.
  • FIG. 4 is a cross-sectional view showing a schematic configuration of a vacuum processing apparatus according to the third embodiment.
  • the gas introduction unit 104 introduces gas (for example, reactive gas such as oxygen gas) from the outside of the vacuum vessel 101 into the vacuum vessel via a pipe.
  • a gas introduction port 150 provided at the tip of the gas introduction unit 104 is disposed between the substrate holder 103 and the pump 105 so as to coincide with the central axis of the substrate 102.
  • the gas introduction port 150 is arranged facing the pump 105 side (the exhaust port 160 side in FIG. 1), and reactive gas is introduced from the gas introduction port 150 toward the pump 105.
  • Arrows 401 and 402 in FIG. 4 schematically show how the introduced gas diffuses in the vacuum vessel 101.
  • the gas introduced from the gas inlet 150 is divided into a gas (arrow 401) directed upward of the vacuum container 101 and a gas (arrow 402) directed downward of the vacuum container.
  • the gas (arrow 402) heading below the vacuum vessel is exhausted by the pump 105 from the exhaust port.
  • the gas that diffuses in the vacuum vessel 101 and reaches the substrate 102 is reduced, and the oxygen distribution pressure at the time of formation can be reduced.
  • the gas (arrow 401) heading above the vacuum vessel diffuses above the substrate in the vacuum vessel and reaches the substrate.
  • oxygen particles of the gas (arrow 401) reach the center of the substrate 102 in order from the end of the substrate 102. Due to such gas diffusion, the distribution of the diffusion particles becomes uniform, and the film thickness distribution of the formed insulator can be improved.
  • a gas for example, a reactive gas such as oxygen gas
  • molecules obtained by applying the gas to the shielding member 510 disposed between the valve body 106 and the substrate holder 103 are used.
  • Insulating (for example, oxidation) treatment is performed by utilizing a flow diffusion phenomenon.
  • FIG. 5 is a cross-sectional view showing a schematic configuration of a vacuum processing apparatus according to the fourth embodiment.
  • the gas introduction unit 104 introduces gas (for example, reactive gas such as oxygen gas) from the outside of the vacuum vessel 101 into the vacuum vessel via a pipe.
  • the gas inlet 150 provided at the tip of the gas inlet is disposed between the substrate holder 103 and the shielding member 510 so as to coincide with the central axis of the substrate 102.
  • the gas inlet 150 is arranged facing the shielding member 510 side, and gas is introduced from the gas inlet 150.
  • Arrows 501 and 502 in FIG. 5 schematically show how the introduced gas diffuses in the vacuum vessel 101.
  • the gas introduced from the gas introduction port reaches the shielding member 510 and then diffuses from the center of the shielding member 510 in the outer peripheral direction (left-right direction in FIG. 5). Then, after reaching the vicinity of the side surface of the vacuum container 101, the gas diffuses into a gas (arrow 501) directed upward of the vacuum container and a gas (arrow 502) directed downward of the vacuum container.
  • the gas (arrow 502) heading below the vacuum container is exhausted by the pump 105 from the exhaust port.
  • the gas that diffuses in the vacuum vessel 101 and reaches the substrate 102 is reduced, and the oxygen distribution pressure at the time of formation can be reduced.
  • the gas (arrow 501) heading above the vacuum vessel diffuses above the substrate in the vacuum vessel and reaches the substrate.
  • oxygen particles of the gas (arrow 501) sequentially reach the center of the substrate 102 from the end of the substrate 102. Due to such gas diffusion, the distribution of the diffusion particles becomes uniform, and the film thickness distribution of the formed insulator can be improved.
  • the back surface of the substrate holder 103 refers to a surface opposite to the substrate mounting surface on which the substrate holder 103 can mount the substrate 102.
  • the back side (back surface) of the substrate holder 103 functions as a shielding member that shields the molecules of the reactive gas from reaching the surface of the substrate 102 linearly.
  • FIG. 6 is a cross-sectional view showing a schematic configuration of a vacuum processing apparatus according to the fifth embodiment.
  • the gas introduction unit 104 introduces gas (for example, reactive gas such as oxygen gas) from the outside of the vacuum vessel 101 into the vacuum vessel via a pipe.
  • the gas introduction port 150 provided at the tip of the gas introduction part is arranged so as to coincide with the central axis of the substrate holder 103 and the central axis of the substrate 102.
  • the gas inlet 150 is arranged facing the back side (back side) of the substrate holder 103, and gas is introduced from the gas inlet 150.
  • Arrows 601 and 602 in FIG. 6 schematically show how the introduced gas diffuses in the vacuum vessel 101.
  • the gas introduced from the gas inlet 150 reaches the back side of the substrate holder 103 and then diffuses from the center of the back side surface of the substrate holder 103 toward the outer periphery. Then, after reaching the vicinity of the side surface of the vacuum vessel 101, it diffuses into a gas (arrow 601) directed upward of the vacuum vessel and a gas (arrow 602) directed downward of the vacuum vessel.
  • the gas (arrow 602) heading below the vacuum container is exhausted by the pump 105 from the exhaust port.
  • the gas that diffuses in the vacuum vessel 101 and reaches the substrate 102 is reduced, and the oxygen distribution pressure at the time of formation can be reduced.
  • the gas (arrow 601) heading above the vacuum vessel diffuses above the substrate in the vacuum vessel and reaches the substrate.
  • oxygen particles of the gas (arrow 601) sequentially reach the center of the substrate 102 from the end of the substrate 102. Due to such gas diffusion, the distribution of the diffusion particles becomes uniform, and the film thickness distribution of the formed insulator can be improved.
  • FIG. 7 is a cross-sectional view showing a schematic configuration of a vacuum processing apparatus according to the sixth embodiment.
  • the gas introduction unit 104 introduces gas from the outside of the vacuum vessel 101 into the vacuum vessel via a pipe.
  • the gas introduction port 150 provided at the tip of the gas introduction part is arranged so as to coincide with the central axis of the substrate holder 103 and the central axis of the substrate 102.
  • the gas inlet 150 is arranged facing the upper surface 710 side of the vacuum vessel 101, and gas is introduced from the gas inlet 150.
  • An arrow 701 in FIG. 7 schematically shows how the introduced gas diffuses in the vacuum vessel 101.
  • the gas introduced from the gas introduction port 150 reaches the upper surface 710 of the vacuum vessel 101 and then diffuses from the center of the upper surface 710 of the vacuum vessel 101 in the outer peripheral direction (left-right direction in FIG. 7). After reaching the vicinity of the side surface of the vacuum vessel 101, the gas is divided into a gas diffusing toward the substrate 102 in the vacuum vessel 101 and a gas diffusing toward the exhaust port side of the pump 105.
  • the gas diffused to the exhaust port side of the pump 105 is exhausted by the pump 105 from the exhaust port.
  • a part of the gas introduced to form the insulator is exhausted by the pump 105, so that the gas that diffuses in the vacuum vessel 101 and reaches the substrate 102 is reduced, and the oxygen distribution pressure at the time of formation is reduced. can do.
  • the gas diffusing to the substrate 102 side sequentially reaches the center of the substrate 102 from the end of the substrate 102. Due to such gas diffusion, the distribution of the diffusion particles becomes uniform, and the film thickness distribution of the formed insulator can be improved.
  • FIG. 1C is a diagram for explaining a configuration of a magnetoresistive element manufacturing apparatus.
  • the magnetoresistive element manufacturing apparatus includes at least one vacuum container for formation, 1 One insulating (for example, oxidation) vacuum vessel and one heat treatment vacuum vessel are provided.
  • the substrate transported from the load lock chamber 8 is transported to the forming vacuum vessel 9a (forming chamber), where the underlayer, the antiferromagnetic layer, the ferromagnetic layer, the nonmagnetic intermediate layer, and the second ferromagnetic layer are transported. Is formed on the substrate.
  • the substrate is transferred to a forming vacuum vessel 9b (forming chamber), and a first metal layer (for example, a first Mg layer) is formed.
  • a first metal layer for example, a first Mg layer
  • the substrate on which the first metal layer is formed is transferred to the vacuum chamber 10 (insulation chamber) for insulation treatment, and the first metal layer is insulated (for example, oxidized).
  • the thickness of the insulator (MgO) to be formed by applying the configuration of the vacuum processing apparatus described in the first to sixth embodiments to the vacuum container 10 (insulating chamber) for insulating processing. It is possible to improve the distribution and reduce the oxygen distribution pressure during formation.
  • the substrate with the first metal layer insulated is returned to the forming vacuum vessel 9b, and a second metal layer (for example, a second Mg layer) is formed on the insulated first metal layer. It is formed.
  • the substrate on which the second metal layer is formed is transferred to the vacuum vessel 11 for heat treatment, and heat treatment is performed.
  • the heat-treated substrate returns to the forming vacuum vessel 9b, and a magnetization free layer and a protective layer are formed.
  • the load lock chamber 8, the forming vacuum containers 9 a and 9 b, the insulating processing vacuum container 10, and the heating processing vacuum container 11 are connected to the transfer chamber 12.
  • Each vacuum vessel (chamber) is equipped with an evacuation device and can be independently evacuated, so that the substrate can be processed in a consistent vacuum.
  • the metal layer can be selected from an Al film, a Ti film, a Zn film, or the like in addition to the Mg film.
  • the magnetoresistive effect element manufacturing apparatus of the present embodiment for example, it is possible to form an ultrathin film having a thickness of 1 nm or less, and it is possible to provide a higher quality magnetoresistive effect element (TMR element).
  • TMR element magnetoresistive effect element

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

L'invention porte sur un appareil de traitement sous vide qui possède : un conteneur sous vide, qui possède une unité de libération d'air connectée à ce dernier, et qui peut être dépressurisé ; un support de substrat qui comporte une surface de placement de substrat pour placer un substrat qui est disposé dans le conteneur sous vide ; et une unité d'introduction de gaz qui comporte un port d'introduction de gaz pour introduire un gaz réactif dans le conteneur sous vide. Le port d'introduction de gaz est disposé au niveau d'un emplacement où des molécules du gaz réactif déchargé dans le conteneur sous vide en provenance du port d'introduction de gaz ne peuvent pas atteindre linéairement la surface de placement de substrat à partir du port d'introduction de gaz, ledit emplacement étant sensiblement sur l'axe central de la surface de placement de substrat, et le gaz réactif atteint la surface de placement de substrat au moyen d'une diffusion d'un flux moléculaire.
PCT/JP2014/002743 2013-09-25 2014-05-26 Appareil de traitement sous vide, procédé de traitement sous vide, procédé pour fabriquer un élément à effet de résistance magnétique, et appareil pour fabriquer un élément à effet de résistance magnétique WO2015045212A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2015538839A JP6068662B2 (ja) 2013-09-25 2014-05-26 真空処理装置、真空処理方法、磁気抵抗効果素子の製造方法および磁気抵抗効果素子の製造装置
TW103132794A TWI545661B (zh) 2013-09-25 2014-09-23 Vacuum processing device, vacuum processing method, manufacturing method of magnetoresistive effect element, and manufacturing device of magnetoresistive effect element

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013198827 2013-09-25
JP2013-198827 2013-09-25

Publications (1)

Publication Number Publication Date
WO2015045212A1 true WO2015045212A1 (fr) 2015-04-02

Family

ID=52742396

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2014/002743 WO2015045212A1 (fr) 2013-09-25 2014-05-26 Appareil de traitement sous vide, procédé de traitement sous vide, procédé pour fabriquer un élément à effet de résistance magnétique, et appareil pour fabriquer un élément à effet de résistance magnétique

Country Status (3)

Country Link
JP (1) JP6068662B2 (fr)
TW (1) TWI545661B (fr)
WO (1) WO2015045212A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6700165B2 (ja) * 2016-12-22 2020-05-27 東京エレクトロン株式会社 成膜装置および成膜方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04370924A (ja) * 1991-06-20 1992-12-24 Fujitsu Ltd Ｃｖｄ装置
JP2005142234A (ja) * 2003-11-04 2005-06-02 Canon Inc 処理装置及び方法
WO2011081203A1 (fr) * 2009-12-28 2011-07-07 キヤノンアネルバ株式会社 Procédé pour la fabrication d'un élément magnétorésistif

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04370924A (ja) * 1991-06-20 1992-12-24 Fujitsu Ltd Ｃｖｄ装置
JP2005142234A (ja) * 2003-11-04 2005-06-02 Canon Inc 処理装置及び方法
WO2011081203A1 (fr) * 2009-12-28 2011-07-07 キヤノンアネルバ株式会社 Procédé pour la fabrication d'un élément magnétorésistif

Also Published As

Publication number Publication date
TW201530664A (zh) 2015-08-01
JP6068662B2 (ja) 2017-01-25
JPWO2015045212A1 (ja) 2017-03-09
TWI545661B (zh) 2016-08-11

Similar Documents

Publication Publication Date Title
CN101517768B (zh) 磁阻效应元件制造方法和用于制造磁阻效应元件的多腔设备
US7318947B1 (en) Method and apparatus for controlling magnetostriction in a spin valve sensor
JP5341082B2 (ja) トンネル磁気抵抗素子の製造方法および製造装置
JP4673858B2 (ja) スパッタ装置および成膜方法
JP6016946B2 (ja) 酸化処理装置、酸化方法、および電子デバイスの製造方法
JP5999543B2 (ja) トンネル磁気抵抗素子の製造方法
JP5745699B2 (ja) トンネル磁気抵抗素子の製造装置
TW201448301A (zh) 磁阻效應元件之製造方法
US10361363B2 (en) Method of manufacturing tunnel magnetoresistive effect element and sputtering apparatus
US20130134032A1 (en) Method of fabricating and apparatus of fabricating tunnel magnetic resistive element
TW200949975A (en) Substrate stage, sputtering apparatus therewith, and film deposition method
JP6068662B2 (ja) 真空処理装置、真空処理方法、磁気抵抗効果素子の製造方法および磁気抵抗効果素子の製造装置
US20090139855A1 (en) Manufacturing method and manufacturing apparatus of magnetoresistance elements
JP5689932B2 (ja) トンネル磁気抵抗素子の製造方法
US8435596B2 (en) Oxidizing method and oxidizing apparatus
JP2008226987A (ja) 磁気抵抗素子の製造方法、磁気デバイスの製造方法、磁気抵抗素子の製造装置および磁気デバイスの製造装置
JP2010106290A (ja) 成膜装置および成膜方法、磁気記録媒体、磁気記録再生装置
JP2011122193A (ja) ガス導入装置、スパッタリング装置、およびスパッタリング方法
US20190109282A1 (en) Method of Processing Workpiece
WO2010038593A1 (fr) Dispositif et procédé servant à déposer une pile de polarisation dure, et dispositif et procédé servant à fabriquer une pile de capteurs magnétiques
JP6103919B2 (ja) 高速原子ビーム源、常温接合装置および常温接合方法
JPWO2009084445A1 (ja) ドライエッチング方法、磁気抵抗効果素子とその製造方法及び製造装置
TW201531579A (zh) 磁阻效應元件之製造方法
JP2010255081A (ja) 基板処理装置及びｃｖｄ装置並びに電子デバイスの製造方法
JPH11328628A (ja) スパッタリング装置及びスパッタリング方法並びにスピンバルブ膜の成膜方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14847013

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2015538839

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14847013

Country of ref document: EP

Kind code of ref document: A1