JP6066565B2 - インプリント装置、および、物品の製造方法 - Google Patents

インプリント装置、および、物品の製造方法 Download PDF

Info

Publication number
JP6066565B2
JP6066565B2 JP2012018637A JP2012018637A JP6066565B2 JP 6066565 B2 JP6066565 B2 JP 6066565B2 JP 2012018637 A JP2012018637 A JP 2012018637A JP 2012018637 A JP2012018637 A JP 2012018637A JP 6066565 B2 JP6066565 B2 JP 6066565B2
Authority
JP
Japan
Prior art keywords
substrate
shot area
mark
alignment
mold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012018637A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013157548A (ja
JP2013157548A5 (enExample
Inventor
章義 鈴木
章義 鈴木
健一郎 篠田
健一郎 篠田
樋浦　充
充 樋浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2012018637A priority Critical patent/JP6066565B2/ja
Priority to KR1020130007281A priority patent/KR101656123B1/ko
Priority to CN201310029991.1A priority patent/CN103226284B/zh
Priority to US13/754,971 priority patent/US9616613B2/en
Publication of JP2013157548A publication Critical patent/JP2013157548A/ja
Publication of JP2013157548A5 publication Critical patent/JP2013157548A5/ja
Application granted granted Critical
Publication of JP6066565B2 publication Critical patent/JP6066565B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/002—Component parts, details or accessories; Auxiliary operations
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7038—Alignment for proximity or contact printer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7042—Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Multimedia (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2012018637A 2012-01-31 2012-01-31 インプリント装置、および、物品の製造方法 Active JP6066565B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012018637A JP6066565B2 (ja) 2012-01-31 2012-01-31 インプリント装置、および、物品の製造方法
KR1020130007281A KR101656123B1 (ko) 2012-01-31 2013-01-23 임프린트 장치 및 물품 제조 방법
CN201310029991.1A CN103226284B (zh) 2012-01-31 2013-01-28 压印装置和制造物品的方法
US13/754,971 US9616613B2 (en) 2012-01-31 2013-01-31 Imprint apparatus including alignment and overlay measurement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012018637A JP6066565B2 (ja) 2012-01-31 2012-01-31 インプリント装置、および、物品の製造方法

Publications (3)

Publication Number Publication Date
JP2013157548A JP2013157548A (ja) 2013-08-15
JP2013157548A5 JP2013157548A5 (enExample) 2015-02-19
JP6066565B2 true JP6066565B2 (ja) 2017-01-25

Family

ID=48836780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012018637A Active JP6066565B2 (ja) 2012-01-31 2012-01-31 インプリント装置、および、物品の製造方法

Country Status (4)

Country Link
US (1) US9616613B2 (enExample)
JP (1) JP6066565B2 (enExample)
KR (1) KR101656123B1 (enExample)
CN (1) CN103226284B (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009153926A1 (ja) * 2008-06-18 2009-12-23 株式会社ニコン テンプレートの製造方法、テンプレートの検査方法及び検査装置、ナノインプリント装置、ナノインプリントシステム、並びにデバイス製造方法
NL2005975A (en) * 2010-03-03 2011-09-06 Asml Netherlands Bv Imprint lithography.
JP5864929B2 (ja) * 2011-07-15 2016-02-17 キヤノン株式会社 インプリント装置および物品の製造方法
JP6188382B2 (ja) * 2013-04-03 2017-08-30 キヤノン株式会社 インプリント装置および物品の製造方法
JP6294680B2 (ja) * 2014-01-24 2018-03-14 キヤノン株式会社 インプリント装置、および物品の製造方法
JP5932859B2 (ja) * 2014-02-18 2016-06-08 キヤノン株式会社 検出装置、インプリント装置、および物品の製造方法
JP6537277B2 (ja) * 2015-01-23 2019-07-03 キヤノン株式会社 インプリント装置、物品製造方法
US20170120338A1 (en) * 2015-11-02 2017-05-04 Baker Hughes Incorporated Additive manufacturing part identification method and part
US10705435B2 (en) 2018-01-12 2020-07-07 Globalfoundries Inc. Self-referencing and self-calibrating interference pattern overlay measurement
JP7112249B2 (ja) * 2018-05-23 2022-08-03 キヤノン株式会社 データ生成方法、パターン形成方法、インプリント装置および物品製造方法
US11740554B2 (en) 2018-10-11 2023-08-29 Canon Kabushiki Kaisha Imprint apparatus and method of manufacturing article
JP7378250B2 (ja) * 2018-10-11 2023-11-13 キヤノン株式会社 インプリント装置、および物品の製造方法
US11256177B2 (en) 2019-09-11 2022-02-22 Kla Corporation Imaging overlay targets using Moiré elements and rotational symmetry arrangements
US11686576B2 (en) 2020-06-04 2023-06-27 Kla Corporation Metrology target for one-dimensional measurement of periodic misregistration
CN111792619B (zh) * 2020-07-17 2024-05-17 中国科学技术大学 一种在玻璃表面连续批量制作微纳结构的方法
CN114695154B (zh) * 2020-12-31 2025-12-09 深圳中科飞测科技股份有限公司 检测设备及其检测方法
US11796925B2 (en) 2022-01-03 2023-10-24 Kla Corporation Scanning overlay metrology using overlay targets having multiple spatial frequencies
US12032300B2 (en) 2022-02-14 2024-07-09 Kla Corporation Imaging overlay with mutually coherent oblique illumination
US12422363B2 (en) 2022-03-30 2025-09-23 Kla Corporation Scanning scatterometry overlay metrology
US12487190B2 (en) 2022-03-30 2025-12-02 Kla Corporation System and method for isolation of specific fourier pupil frequency in overlay metrology
JP2024011582A (ja) * 2022-07-15 2024-01-25 キヤノン株式会社 インプリント装置、インプリント方法、及び物品の製造方法
US12235588B2 (en) 2023-02-16 2025-02-25 Kla Corporation Scanning overlay metrology with high signal to noise ratio

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1303792B1 (en) * 2000-07-16 2012-10-03 Board Of Regents, The University Of Texas System High-resolution overlay alignement methods and systems for imprint lithography
KR101175108B1 (ko) 2004-06-03 2012-08-21 더 보드 오브 리전츠 오브 더 유니버시티 오브 텍사스 시스템 마이크로리소그래피를 위한 정렬 및 오버레이의 개선을 위한 시스템 및 방법
US7630067B2 (en) * 2004-11-30 2009-12-08 Molecular Imprints, Inc. Interferometric analysis method for the manufacture of nano-scale devices
US7486408B2 (en) * 2006-03-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method with reduced scribe lane usage for substrate measurement
JP2009088264A (ja) * 2007-09-28 2009-04-23 Toshiba Corp 微細加工装置およびデバイス製造方法
US8432548B2 (en) * 2008-11-04 2013-04-30 Molecular Imprints, Inc. Alignment for edge field nano-imprinting
JP2011061025A (ja) * 2009-09-10 2011-03-24 Toshiba Corp デバイス製造方法
JP5662741B2 (ja) 2009-09-30 2015-02-04 キヤノン株式会社 インプリント装置および物品の製造方法
JP5597031B2 (ja) * 2010-05-31 2014-10-01 キヤノン株式会社 リソグラフィ装置及び物品の製造方法

Also Published As

Publication number Publication date
US9616613B2 (en) 2017-04-11
JP2013157548A (ja) 2013-08-15
KR101656123B1 (ko) 2016-09-08
US20130193602A1 (en) 2013-08-01
KR20130088770A (ko) 2013-08-08
CN103226284A (zh) 2013-07-31
CN103226284B (zh) 2015-11-25

Similar Documents

Publication Publication Date Title
JP6066565B2 (ja) インプリント装置、および、物品の製造方法
TWI452441B (zh) 測量方法、裝置及基板
CN101957567B (zh) 多头对准系统中的对准头的位置校准
JP4701209B2 (ja) 角度分解したスペクトロスコピーリソグラフィの特性解析方法および装置
KR101066626B1 (ko) 정렬 마크 제공 방법, 디바이스 제조 방법 및 리소그래피 장치
CN101819384B (zh) 检验设备、光刻设备、光刻处理单元以及检验方法
JP5634864B2 (ja) リソグラフィック・プロセスに於ける、プロセス制御方法およびプロセス制御装置
JP6360287B2 (ja) リソグラフィ装置、位置合わせ方法、および物品の製造方法
JP2007013192A (ja) 測定方法及び較正基板
JP6562707B2 (ja) インプリント装置、インプリント方法及び物品の製造方法
JP2010080631A (ja) 押印装置および物品の製造方法
KR101573572B1 (ko) 임프린트 장치, 물품 제조 방법 및 패턴 전사 방법
JP2011023726A (ja) 物体アライメント測定方法及び装置
JP6882338B2 (ja) リソグラフィ方法及び装置
TWI519905B (zh) 微影裝置及器件製造方法
CN108292111B (zh) 用于在光刻设备中处理衬底的方法和设备
JP2012129314A (ja) インプリント装置、そのモールド及び物品の製造方法
TWI831533B (zh) 感測對準標記之設備及方法
JP7678726B2 (ja) インプリント装置、および物品製造方法
US20250336843A1 (en) Alignment mark, alignment mark pair, substrate, and manufacturing method of semiconductor device
JP2021168338A (ja) 検出装置、リソグラフィ装置、物品の製造方法、検出方法に関する。

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141225

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20141225

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20151021

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20151023

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151222

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160606

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160805

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20161121

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20161220

R151 Written notification of patent or utility model registration

Ref document number: 6066565

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151