CN103226284B - 压印装置和制造物品的方法 - Google Patents
压印装置和制造物品的方法 Download PDFInfo
- Publication number
- CN103226284B CN103226284B CN201310029991.1A CN201310029991A CN103226284B CN 103226284 B CN103226284 B CN 103226284B CN 201310029991 A CN201310029991 A CN 201310029991A CN 103226284 B CN103226284 B CN 103226284B
- Authority
- CN
- China
- Prior art keywords
- injection region
- substrate
- pattern
- mould
- stacked
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 238000002347 injection Methods 0.000 claims abstract description 175
- 239000007924 injection Substances 0.000 claims abstract description 175
- 238000005259 measurement Methods 0.000 claims abstract description 106
- 239000000758 substrate Substances 0.000 claims abstract description 103
- 238000012546 transfer Methods 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 11
- 230000003287 optical effect Effects 0.000 claims description 88
- 238000012545 processing Methods 0.000 claims description 4
- 229920005989 resin Polymers 0.000 description 41
- 239000011347 resin Substances 0.000 description 41
- 230000008569 process Effects 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 9
- 230000000007 visual effect Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 210000003128 head Anatomy 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 208000034189 Sclerosis Diseases 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000012876 topography Methods 0.000 description 3
- 238000010923 batch production Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 108010022579 ATP dependent 26S protease Proteins 0.000 description 1
- 241001270131 Agaricus moelleri Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000001494 step-and-flash imprint lithography Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/002—Component parts, details or accessories; Auxiliary operations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7038—Alignment for proximity or contact printer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7042—Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Multimedia (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012018637A JP6066565B2 (ja) | 2012-01-31 | 2012-01-31 | インプリント装置、および、物品の製造方法 |
| JP2012-018637 | 2012-01-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103226284A CN103226284A (zh) | 2013-07-31 |
| CN103226284B true CN103226284B (zh) | 2015-11-25 |
Family
ID=48836780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310029991.1A Active CN103226284B (zh) | 2012-01-31 | 2013-01-28 | 压印装置和制造物品的方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9616613B2 (enExample) |
| JP (1) | JP6066565B2 (enExample) |
| KR (1) | KR101656123B1 (enExample) |
| CN (1) | CN103226284B (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009153926A1 (ja) * | 2008-06-18 | 2009-12-23 | 株式会社ニコン | テンプレートの製造方法、テンプレートの検査方法及び検査装置、ナノインプリント装置、ナノインプリントシステム、並びにデバイス製造方法 |
| NL2005975A (en) * | 2010-03-03 | 2011-09-06 | Asml Netherlands Bv | Imprint lithography. |
| JP5864929B2 (ja) * | 2011-07-15 | 2016-02-17 | キヤノン株式会社 | インプリント装置および物品の製造方法 |
| JP6188382B2 (ja) * | 2013-04-03 | 2017-08-30 | キヤノン株式会社 | インプリント装置および物品の製造方法 |
| JP6294680B2 (ja) * | 2014-01-24 | 2018-03-14 | キヤノン株式会社 | インプリント装置、および物品の製造方法 |
| JP5932859B2 (ja) * | 2014-02-18 | 2016-06-08 | キヤノン株式会社 | 検出装置、インプリント装置、および物品の製造方法 |
| JP6537277B2 (ja) * | 2015-01-23 | 2019-07-03 | キヤノン株式会社 | インプリント装置、物品製造方法 |
| US20170120338A1 (en) * | 2015-11-02 | 2017-05-04 | Baker Hughes Incorporated | Additive manufacturing part identification method and part |
| US10705435B2 (en) | 2018-01-12 | 2020-07-07 | Globalfoundries Inc. | Self-referencing and self-calibrating interference pattern overlay measurement |
| JP7112249B2 (ja) * | 2018-05-23 | 2022-08-03 | キヤノン株式会社 | データ生成方法、パターン形成方法、インプリント装置および物品製造方法 |
| US11740554B2 (en) | 2018-10-11 | 2023-08-29 | Canon Kabushiki Kaisha | Imprint apparatus and method of manufacturing article |
| JP7378250B2 (ja) * | 2018-10-11 | 2023-11-13 | キヤノン株式会社 | インプリント装置、および物品の製造方法 |
| US11256177B2 (en) | 2019-09-11 | 2022-02-22 | Kla Corporation | Imaging overlay targets using Moiré elements and rotational symmetry arrangements |
| US11686576B2 (en) | 2020-06-04 | 2023-06-27 | Kla Corporation | Metrology target for one-dimensional measurement of periodic misregistration |
| CN111792619B (zh) * | 2020-07-17 | 2024-05-17 | 中国科学技术大学 | 一种在玻璃表面连续批量制作微纳结构的方法 |
| CN114695154B (zh) * | 2020-12-31 | 2025-12-09 | 深圳中科飞测科技股份有限公司 | 检测设备及其检测方法 |
| US11796925B2 (en) | 2022-01-03 | 2023-10-24 | Kla Corporation | Scanning overlay metrology using overlay targets having multiple spatial frequencies |
| US12032300B2 (en) | 2022-02-14 | 2024-07-09 | Kla Corporation | Imaging overlay with mutually coherent oblique illumination |
| US12422363B2 (en) | 2022-03-30 | 2025-09-23 | Kla Corporation | Scanning scatterometry overlay metrology |
| US12487190B2 (en) | 2022-03-30 | 2025-12-02 | Kla Corporation | System and method for isolation of specific fourier pupil frequency in overlay metrology |
| JP2024011582A (ja) * | 2022-07-15 | 2024-01-25 | キヤノン株式会社 | インプリント装置、インプリント方法、及び物品の製造方法 |
| US12235588B2 (en) | 2023-02-16 | 2025-02-25 | Kla Corporation | Scanning overlay metrology with high signal to noise ratio |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1476551A (zh) * | 2000-07-16 | 2004-02-18 | �ÿ���˹�ݴ�ѧϵͳ���»� | 用于平版印刷工艺中的高分辨率重叠对齐方法和系统 |
| CN101379435A (zh) * | 2004-06-03 | 2009-03-04 | 得克萨斯州大学系统董事会 | 用于改进显微蚀刻的对齐和覆盖的系统和方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7630067B2 (en) * | 2004-11-30 | 2009-12-08 | Molecular Imprints, Inc. | Interferometric analysis method for the manufacture of nano-scale devices |
| US7486408B2 (en) * | 2006-03-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method with reduced scribe lane usage for substrate measurement |
| JP2009088264A (ja) * | 2007-09-28 | 2009-04-23 | Toshiba Corp | 微細加工装置およびデバイス製造方法 |
| US8432548B2 (en) * | 2008-11-04 | 2013-04-30 | Molecular Imprints, Inc. | Alignment for edge field nano-imprinting |
| JP2011061025A (ja) * | 2009-09-10 | 2011-03-24 | Toshiba Corp | デバイス製造方法 |
| JP5662741B2 (ja) | 2009-09-30 | 2015-02-04 | キヤノン株式会社 | インプリント装置および物品の製造方法 |
| JP5597031B2 (ja) * | 2010-05-31 | 2014-10-01 | キヤノン株式会社 | リソグラフィ装置及び物品の製造方法 |
-
2012
- 2012-01-31 JP JP2012018637A patent/JP6066565B2/ja active Active
-
2013
- 2013-01-23 KR KR1020130007281A patent/KR101656123B1/ko active Active
- 2013-01-28 CN CN201310029991.1A patent/CN103226284B/zh active Active
- 2013-01-31 US US13/754,971 patent/US9616613B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1476551A (zh) * | 2000-07-16 | 2004-02-18 | �ÿ���˹�ݴ�ѧϵͳ���»� | 用于平版印刷工艺中的高分辨率重叠对齐方法和系统 |
| CN101379435A (zh) * | 2004-06-03 | 2009-03-04 | 得克萨斯州大学系统董事会 | 用于改进显微蚀刻的对齐和覆盖的系统和方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US9616613B2 (en) | 2017-04-11 |
| JP2013157548A (ja) | 2013-08-15 |
| KR101656123B1 (ko) | 2016-09-08 |
| US20130193602A1 (en) | 2013-08-01 |
| KR20130088770A (ko) | 2013-08-08 |
| CN103226284A (zh) | 2013-07-31 |
| JP6066565B2 (ja) | 2017-01-25 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |