JP6063650B2 - フォトマスクの製造方法 - Google Patents

フォトマスクの製造方法 Download PDF

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Publication number
JP6063650B2
JP6063650B2 JP2012137171A JP2012137171A JP6063650B2 JP 6063650 B2 JP6063650 B2 JP 6063650B2 JP 2012137171 A JP2012137171 A JP 2012137171A JP 2012137171 A JP2012137171 A JP 2012137171A JP 6063650 B2 JP6063650 B2 JP 6063650B2
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JP
Japan
Prior art keywords
pattern
film
resist
semi
photomask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012137171A
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English (en)
Japanese (ja)
Other versions
JP2014002255A5 (ko
JP2014002255A (ja
Inventor
山口　昇
昇 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP2012137171A priority Critical patent/JP6063650B2/ja
Priority to TW102117253A priority patent/TWI499860B/zh
Priority to KR1020130066545A priority patent/KR101443531B1/ko
Priority to CN201510645264.7A priority patent/CN105223769B/zh
Priority to CN201310238262.7A priority patent/CN103513505B/zh
Publication of JP2014002255A publication Critical patent/JP2014002255A/ja
Publication of JP2014002255A5 publication Critical patent/JP2014002255A5/ja
Application granted granted Critical
Publication of JP6063650B2 publication Critical patent/JP6063650B2/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2012137171A 2012-06-18 2012-06-18 フォトマスクの製造方法 Active JP6063650B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012137171A JP6063650B2 (ja) 2012-06-18 2012-06-18 フォトマスクの製造方法
TW102117253A TWI499860B (zh) 2012-06-18 2013-05-15 光罩之製造方法、光罩、圖案轉印方法及平面顯示器之製造方法
KR1020130066545A KR101443531B1 (ko) 2012-06-18 2013-06-11 포토 마스크의 제조 방법, 포토 마스크, 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법
CN201510645264.7A CN105223769B (zh) 2012-06-18 2013-06-17 光掩模的制造方法、转印方法及平板显示器的制造方法
CN201310238262.7A CN103513505B (zh) 2012-06-18 2013-06-17 光掩模及其制造方法、转印方法及平板显示器的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012137171A JP6063650B2 (ja) 2012-06-18 2012-06-18 フォトマスクの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016219117A Division JP2017072842A (ja) 2016-11-09 2016-11-09 フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法

Publications (3)

Publication Number Publication Date
JP2014002255A JP2014002255A (ja) 2014-01-09
JP2014002255A5 JP2014002255A5 (ko) 2015-01-15
JP6063650B2 true JP6063650B2 (ja) 2017-01-18

Family

ID=49896455

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012137171A Active JP6063650B2 (ja) 2012-06-18 2012-06-18 フォトマスクの製造方法

Country Status (4)

Country Link
JP (1) JP6063650B2 (ko)
KR (1) KR101443531B1 (ko)
CN (1) CN103513505B (ko)
TW (1) TWI499860B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI784550B (zh) * 2020-06-02 2022-11-21 南韓商吉佳藍科技股份有限公司 能夠對準圖案的轉印裝置、製造圖案基板的方法及記錄介質

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104460250B (zh) * 2014-04-22 2017-01-04 上海华力微电子有限公司 一种提高光刻工艺窗口的版图处理方法
KR102157644B1 (ko) * 2014-08-13 2020-09-21 (주)에스앤에스텍 다계조 포토 마스크 및 그의 제조 방법
TWI604267B (zh) * 2014-12-17 2017-11-01 Ｈｏｙａ股份有限公司 光罩之製造方法及顯示裝置之製造方法
JP6456748B2 (ja) * 2015-03-28 2019-01-23 Hoya株式会社 フォトマスクの製造方法、フォトマスク及びフラットパネルディスプレイの製造方法
JP2016224289A (ja) * 2015-06-01 2016-12-28 Hoya株式会社 フォトマスクの製造方法、フォトマスク及び表示装置の製造方法
JP6767735B2 (ja) * 2015-06-30 2020-10-14 Hoya株式会社 フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法
CN105093760A (zh) * 2015-09-18 2015-11-25 京东方科技集团股份有限公司 Coa基板及其制备方法、显示装置
JP6586344B2 (ja) * 2015-10-20 2019-10-02 Hoya株式会社 フォトマスクの製造方法、フォトマスク、および、表示装置の製造方法
JP6514143B2 (ja) * 2016-05-18 2019-05-15 Hoya株式会社 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法
JP6755733B2 (ja) * 2016-07-14 2020-09-16 キヤノン株式会社 マスク、計測方法、露光方法、及び、物品製造方法
JP7080070B2 (ja) * 2017-03-24 2022-06-03 Hoya株式会社 フォトマスク、及び表示装置の製造方法

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JPH1124231A (ja) * 1997-07-01 1999-01-29 Sony Corp ハーフトーン位相シフトマスク、及びその製造方法
TWI286663B (en) * 2003-06-30 2007-09-11 Hoya Corp Method for manufacturing gray tone mask, and gray tone mask
JP4525893B2 (ja) * 2003-10-24 2010-08-18 信越化学工業株式会社 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法
JP2006017798A (ja) * 2004-06-30 2006-01-19 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク及びその検査方法
CN101258442B (zh) * 2005-09-06 2012-02-15 富士通半导体股份有限公司 图案复制掩模、焦距变动测定方法及装置、半导体器件的制造方法
TW200913013A (en) * 2007-07-30 2009-03-16 Hoya Corp Method of manufacturing a gray tone mask, gray tone mask, method of inspecting a gray tone mask, and method of transferring a pattern
WO2010092901A1 (ja) * 2009-02-16 2010-08-19 大日本印刷株式会社 フォトマスク、フォトマスクの製造方法及び修正方法
JP5588633B2 (ja) * 2009-06-30 2014-09-10 アルバック成膜株式会社 位相シフトマスクの製造方法、フラットパネルディスプレイの製造方法及び位相シフトマスク
JP5479074B2 (ja) * 2009-12-21 2014-04-23 Ｈｏｙａ株式会社 光学素子の製造方法、光学素子
CN102233743B (zh) * 2010-04-21 2013-11-13 北京京东方光电科技有限公司 掩膜图形转印装置和制备掩膜图形的方法
JP2012008545A (ja) * 2010-05-24 2012-01-12 Hoya Corp 多階調フォトマスクの製造方法、及びパターン転写方法
JP2012008546A (ja) * 2010-05-24 2012-01-12 Hoya Corp 多階調フォトマスクの製造方法、及びパターン転写方法
JP6081716B2 (ja) * 2012-05-02 2017-02-15 Hoya株式会社 フォトマスク、パターン転写方法及びフラットパネルディスプレイの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI784550B (zh) * 2020-06-02 2022-11-21 南韓商吉佳藍科技股份有限公司 能夠對準圖案的轉印裝置、製造圖案基板的方法及記錄介質

Also Published As

Publication number Publication date
CN105223769A (zh) 2016-01-06
TWI499860B (zh) 2015-09-11
KR20130142072A (ko) 2013-12-27
TW201400976A (zh) 2014-01-01
CN103513505A (zh) 2014-01-15
CN103513505B (zh) 2017-05-17
KR101443531B1 (ko) 2014-09-23
JP2014002255A (ja) 2014-01-09

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