JP6062496B1 - 光導波路素子 - Google Patents
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- 230000003287 optical effect Effects 0.000 title claims abstract description 156
- 230000005684 electric field Effects 0.000 claims description 48
- 239000002019 doping agent Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000005468 ion implantation Methods 0.000 description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 229910052710 silicon Inorganic materials 0.000 description 23
- 239000010703 silicon Substances 0.000 description 23
- 239000000758 substrate Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 238000005253 cladding Methods 0.000 description 7
- 230000005284 excitation Effects 0.000 description 7
- 238000004891 communication Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000002238 attenuated effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000013307 optical fiber Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
- G02F1/2257—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure the optical waveguides being made of semiconducting material
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12097—Ridge, rib or the like
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/212—Mach-Zehnder type
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/06—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide
- G02F2201/063—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide ridge; rib; strip loaded
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
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Abstract
Description
図1は、本発明の第1の実施の形態に係る光導波路素子100の断面図である。なお、図1では、水平方向(第1方向)および垂直方向(第2方向)を併せて示している。
図3の(a)はマッハ−ツェンダー干渉計のブロック図であり、図3の(b)はマッハ−ツェンダー干渉計を備えた光変調器1の斜視図である。マッハ−ツェンダー干渉計は、外部からのノイズの影響を受けにくい、温度変化に対して変調動作の安定性が高い等の利点を有することから、光通信用の光変調器に多く採用されている。
図5および図6はそれぞれ、空乏層113における導波光の電界プロファイルである。図5および図6には、空乏層113のプロファイルの一例が、導波光(TEモード)の電界絶対値の等高線およびリブ導波路コア101の輪郭と共に表示されている。なお、この等高線は、導波光の電界絶対値のピークを1に規格化し、電界絶対値が1dB間隔で描かれている。図5および図6において“0”と表示された点が、電界絶対値のピーク(0dB)を示している。図5に示されたプロファイルを有する空乏層113によって、導波光電界プロファイルと空乏層113との重なりが最大となり、光導波路素子100の駆動電圧を低減するという効果が最大となる。
101 リブ導波路コア(コア部)
101r リブ領域(突出部)
101s スラブ領域(非突出部)
105 中央領域(第1コア領域の一部)
106 側方領域(第1コア領域の一部)
107 側方領域(第1コア領域の一部)
108 接続領域(第1コア領域の一部)
109 中央領域(第2コア領域の一部)
110 側方領域(第2コア領域の一部)
111 側方領域(第2コア領域の一部)
112 接続領域(第2コア領域の一部)
113 空乏層
401 第1テーパ部
402 第2テーパ部
Claims (9)
- 突出部と、第1方向に沿って該突出部を挟むように配置された、該突出部よりも高さの低い2つの非突出部とを有するリブ導波路をコア部として含み、
上記コア部は、互いに上記第1方向に対して垂直な第2方向に重ねて配置された、PN接合を形成する第1コア領域および第2コア領域を有しており、
上記第1コア領域と上記第2コア領域との間に、上記突出部から2つの上記非突出部の少なくとも何れか一方にまで延伸する空乏層が形成され、
上記2つの非突出部のそれぞれにおける上記空乏層の上記第2方向の位置は、上記突出部における上記空乏層の上記第2方向の位置より低く、
上記空乏層は、上記突出部から2つの上記非突出部のうち両方にまで延伸していることを特徴とする光導波路素子。 - 上記コア部における導波光の電界ピーク値に対して、上記導波光の電界の減衰率が13dB以内になるように、上記空乏層の上記第1方向における端が定められていることを特徴とする請求項1に記載の光導波路素子。
- 少なくとも1つの上記非突出部において、上記第1コア領域の上記第2方向の厚みと、上記第2コア領域の上記第2方向の厚みとが等しいことを特徴とする請求項1または2に記載の光導波路素子。
- 上記光導波路素子は、
光の入射側および出射側の一方に近いほど上記第1方向に沿った各上記非突出部の幅が小さくなるようなテーパ形状を有する第1テーパ部と、
上記第1テーパ部における光の入射側および出射側の他方の端部と隣接して配置されており、光の入射側および出射側の一方に近いほど上記第1方向に沿った上記突出部の幅が小さくなるようなテーパ形状を有する第2テーパ部とを有していることを特徴とする請求項1から3のいずれか1項に記載の光導波路素子。 - 上記第2方向に関し、
上記コア部の下面の高さを基準とした、少なくとも1つの上記非突出部における上記空乏層の高さは、
hs/2 (但し、hs:該非突出部の厚み)
であることを特徴とする請求項1から4のいずれか1項に記載の光導波路素子。 - 上記第2方向に関し、
上記コア部の下面の高さを基準とした、上記突出部における上記空乏層の高さは、
hs/2以上、かつ、hr−hs/2以下 (但し、hs:少なくとも1つの上記非突出部の厚み、hr:上記突出部の厚み)
であることを特徴とする請求項1から5のいずれか1項に記載の光導波路素子。 - 上記空乏層と導波光の電界との重なりが最大となる場合、
上記第2方向に関し、
上記コア部の下面の高さを基準とした、上記突出部における上記第1コア領域の下面の高さは、
hr/2−hs/2
であり、
上記コア部の下面の高さを基準とした、上記突出部における上記第2コア領域の上面の高さは、
hr/2+hs/2
であることを特徴とする請求項6に記載の光導波路素子。 - 上記突出部は、上記第1コア領域および上記第2コア領域の直上、ならびに、上記第1コア領域および上記第2コア領域の直下のうち少なくとも一方に、ドーパントが意図的に注入されていないアンドープ領域を有していることを特徴とする請求項6に記載の光導波路素子。
- 突出部と、第1方向に沿って該突出部を挟むように配置された、該突出部よりも高さの低い2つの非突出部とを有するリブ導波路をコア部として含み、
上記コア部は、互いに上記第1方向に対して垂直な第2方向に重ねて配置された、PN接合を形成する第1コア領域および第2コア領域を有しており、
上記第1コア領域と上記第2コア領域との間に、上記突出部から2つの上記非突出部の少なくとも何れか一方にまで延伸する空乏層が形成され、
上記空乏層と導波光の電界との重なりが最大となる場合、
上記第2方向に関し、
上記コア部の下面の高さを基準とした、上記突出部における上記第1コア領域の下面の高さは、
hr/2−hs/2 (但し、hs:少なくとも1つの上記非突出部の厚み、hr:上記突出部の厚み)
であり、
上記コア部の下面の高さを基準とした、上記突出部における上記第2コア領域の上面の高さは、
hr/2+hs/2
であることを特徴とする光導波路素子。
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PCT/JP2016/068864 WO2016208732A1 (ja) | 2015-06-26 | 2016-06-24 | 光導波路素子 |
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US9329415B2 (en) * | 2012-11-05 | 2016-05-03 | Agency For Science, Technology And Research | Method for forming an optical modulator |
JP5413865B1 (ja) * | 2012-12-27 | 2014-02-12 | 株式会社フジクラ | 光導波路素子及び光変調器 |
CN103439807A (zh) * | 2013-08-28 | 2013-12-11 | 中国科学院半导体研究所 | 石墨烯的低折射率差波导调制器及制备方法 |
CN110824729A (zh) * | 2014-04-18 | 2020-02-21 | 华为技术有限公司 | 具有透明导电和低折射率栅极的mos电容式光学调制器 |
US9612459B2 (en) * | 2014-07-01 | 2017-04-04 | Laxense Inc. | Silicon optical modulator using asymmetric shallow waveguide and the method to make the same |
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2015
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JP7302671B2 (ja) | 2019-12-03 | 2023-07-04 | 株式会社村田製作所 | 光学センサ |
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US9927637B2 (en) | 2018-03-27 |
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